2N4401 WEITRON | Alldatasheet

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P CM : 0.625 W （T amb=25℃） Collector current I CM: 0.6 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range T J，Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified ） Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100μA , I E=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, I C=0 6 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 μA Collector cut-off current I CEO VCE=35 V , IB=0 0.1 μA Emitter cut-off current I EBO VEB=5V , IC=0 0.1 μA DC current gain hFE（1） VCE=1 V, IC= 150m A 100 300 Collector-emitter saturation voltage VCE(sat) IC=150 mA, IB=15mA 0.4 V Base-emitter saturation voltage VBE(sat) IC= 150 mA, IB=15mA 0.95 V Transition frequency f T VCE= 10V, IC= 20mA f = 100MHz

250 MHz

1 2 31. EMITTER 2. BASE 3. COLLECTOR WEITRON http://www.weitron.com.tw General Purpose TransistorsNPN Silicon

http://www.weitron.com.tw 2N4401

http://www.weitron.com.tw Dim A B C D E G H J K L Min 3.30 1.10 0.38 0.36 4.40 3.43 4.30 Max TO-92 TO-92 Outline Dimensions unit:mm 2N4401 3.70 1.40 0.55 0.51 4.70 4.70 2.64 14.50 1.270TYP E C H A B D L J K G 2.44 14.10