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WEJ ELECTRONIC CO.,LTD 2N4401 TRANSISTOR (NPN)
FEATURES
P CM : 0.625 W (Tamb=25 ℃ ) Collector current I C M : 0.6 A Collector-base voltage V (BR)CBO : 60 V Operating and storage junction temperature range T J, Tstg: -55 ℃ to +150 ℃ ELECTRICAL CHARACTERISTICS ( Tamb=25 unless otherwise specified) P a r a m e t e r Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100 µ A , I E=0 60 V Collector-emitter breakdown voltage V(BR)CEO I C= 1mA , I B=0 40 V Emitter-base breakdown voltage V(BR)EBO I E=100µA, I C=0 6 V Collector cut-off current ICBO V CB=50 V , I E=0 0.1 µ A Collector cut-off current ICEO V CE=35 V , I B=0 0.1 µ A Emitter cut-off current IEBO V EB=5V , I C=0 0.1 µ A DC current gain hFE1 VCE=1 V, I C= 150mA 100 300 Collector-emitter saturation voltage VCE(sat) I C=150 mA, IB=15mA 0.4 V Base-emitter saturation voltage VBE(sat) I C= 150 mA, IB=15mA 0.95 V Transition frequency f T VCE= 10V, IC= 20mA f = 100MHz
250 MHz
1.EMILTTER 2.BASE 3. COLLECTOR 2N4401 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. R o HS