4401

2N4401 ONSEMI | Alldatasheet

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• Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 60 Vdc Emitter − Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/ °C Total Device Dissipation @ T C = 25°C Derate above 25°C PD 1.5 W mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient R JA 200 °C/W Thermal Resistance, Junction−to−Case R JC 83.3 °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TO−92 CASE 29 STYLE 1 Preferred devices are recommended choices for future use and best overall value. Y = Year WW = Work Week MARKING DIAGRAM 4401 YWW See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

http://onsemi.com COLLECTOR BASE EMITTER

http://onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV − 0.1 Adc Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX − 0.1 Adc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) hFE 100 300 Collector−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Collector−Emitter Saturation Voltage(IC = 500 mAdc, IB = 50 mAdc) VCE(sat) − 0.4 0.75 Vdc Base− Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Base− Emitter Saturation Voltage(IC = 500 mAdc, IB = 50 mAdc) VBE(sat) 0.75 0.95 1.2 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 250 − MHz Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) C cb − 6.5 pF Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) C eb − 30 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 15 k ohms Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10−4 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 500 − Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mhos SWITCHING CHARACTERISTICS Delay Time (VCC = 30 Vdc, VBE = 2.0 Vdc, td − 15 ns Rise Time (VCC 30 Vdc, VBE 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) tr − 20 ns Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts − 225 ns Fall Time (VCC 30 Vdc, IC 150 mAdc, IB1 = IB2 = 15 mAdc) tf − 30 ns 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.

http://onsemi.com PACKAGE DIMENSIONS TO−92 TO−226AA CASE 29−11 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. R A P J L B K G H SECTION X−X CV D N N XX SEATING PLANE DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 N 0.080 0.105 2.04 2.66 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR

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