2N4401 FAIRCHILD | Alldatasheet
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NPN General Purpose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. MMBT44012N4401 Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 1.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N4401 *MMBT4401 PD Total Device Dissipation Derate above 25°C 625 5.0 350 2.8 mW mW/ °C R θJC Thermal Resistance, Junction to Case 83.3 °C/W R θJA Thermal Resistance, Junction to Ambient 200 357 °C/W 2N4401 / MMBT4401 C B E TO-92 C B E SOT-23 Mark: 2X *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Discrete POWER & Signal Technologies ã 1997 Fairchild Semiconductor Corporation
Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS V(BR )CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V V(BR )CBO Collector-Base Breakdown Voltage IC = 0.1 mA, IE = 0 60 V V(BR )EBO Emitter-Base Breakdown Voltage I E = 0.1 mA, IC = 0 6.0 V IBL Base Cutoff Current V CE = 35 V, VEB = 0.4 V 0.1 µA ICEX Collector Cutoff Current V CE = 35 V, VEB = 0.4 V 0.1 µA ON CHARACTERISTICS* hFE DC Current Gain I C = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 1.0 V IC = 500 mA, VCE = 2.0 V 100 300 VCE(sat) Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.4 0.75 V V VBE(sat) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.75 0.95 1.2 V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 20 mA, VCE = 10 V, f = 100 MHz
250 MHz
C cb Collector-Base Capacitance V CB = 5.0 V, IE = 0, f = 140 kHz 6.5 pF C eb Emitter-Base Capacitance V BE = 0.5 V, IC = 0, f = 140 kHz 30 pF hie Input Impedance I C = 1.0 mA, VCE = 10 V, f = 1.0 kHz 1.0 15 kΩ hre Voltage Feedback Ratio I C = 1.0 mA, VCE = 10 V, f = 1.0 kHz 0.1 8.0 x 10-4 hfe Small-Signal Current Gain I C = 1.0 mA, VCE = 10 V, f = 1.0 kHz 40 500 hoe Output Admittance I C = 1.0 mA, VCE = 10 V, f = 1.0 kHz 1.0 30 µmhos SWITCHING CHARACTERISTICS td Delay Time V CC = 30 V, VEB = 0.2 V, 15 ns tr Rise Time I C = 150 mA, IB1 = 15 mA 20 ns ts Storage Time V CC = 30 V, IC = 150 mA 225 ns tf Fall Time I B1 = IB2 = 15 mA 30 ns *Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0% Symbol Parameter Test C onditions Min Max Units NPN General Purpose Amplifier (continued) 2N4401 / MMBT4401