4232BGM

4232BGM VBSEMI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

Dual N-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET Power MOSFET  100 % Rg Tested  100 % UIS Tested  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 Notebook System Power  Low Current DC/DC PRODUCT SUMMARY VDS (V) R DS(on) () ID (A)a Qg (Typ.) 0.016 at VGS = 10 V 8.5 7.1 0.020 at VGS = 4.5 V 7.6 S 1 D 1 G 1 D 1 S 2 D 2 G 2 D 2 SO-8 Top View N-Channel MOSFET G 1 D 1 S 1 N-Channel MOSFET G 2 D 2 S 2 Notes: a. Based on TC = 25 °C. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 110 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless othe rwise noted) Parameter Symbol Limit Unit Drain-Source V oltage VDS 30 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 8.5 A TC = 70 °C 7.5 TA = 25 °C 7.2b, c TA = 70 °C 5.9b, c Pulsed Drain Current IDM 30 Source-Drain Current Diode Current TC = 25 °C IS 2.8 TA = 25 °C 1.8b, c Pulsed Source-Drain Current ISM 30 Single Pulse Avalanche Current L = 0.1 m H IAS 10 Single Pulse Avalanche Energy EAS 5 Maximum Po wer Dissipation TC = 25 °C PD 3.1 WTC = 70 °C 2.0 TA = 25 °C 2.0b, c TA = 70 °C 1.25b, c Operating Junction and S torage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambientb, d t  10 s RthJA 52 62.5 °C/W Maximum Junction-to-Foot (D rain) Steady-State RthJF 30 40 4232BGM www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

Stresses beyond those list ed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unle ss otherwise noted) Parameter Symb ol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient VDS/TJ ID = 250 µA 3.0 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ ID = 250 µA - 5.2 Gate Threshold Voltage VGS(th) VDS = VGS, ID= 250 µA 1.2 2.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V 100 nA Zero Gate V oltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µAVDS = 30 V, VGS = 0 V, TJ = 55 °C On -State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 20 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 8 A 0.016 VGS = 4.5 V, ID = 5 A 0.020 Forward Transconductanceb gfs VDS = 15 V, ID = 8 A 27 S Dynamica Input Capacitance Ciss VDS = 15 V, VGS = 0 V, ID = 1 MHz 660 pFOutput Capacitance Coss 140 Reverse Transfe r Capacitance Crss 86 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 8 A 14.5 22 nCVDS = 15 V, VGS = 4.5 V, ID = 8 A 7.1 11 Gate-Sou rce Charge Qgs 1.9 Gate-Drain Charg e Qgd 2.7 Gate Resista nce Rg f = 1 MHz 0.5 2. 6 5.2  Tur n-On Delay Time td(on) VDD = 15 V, RL = 3  ID  5 A, VGEN = 4.5 V, Rg = 1  14 28 ns Rise Time tr 45 80 Turn-Off Delay T ime td(off) 18 35 Fall Ti me tf 12 24 Tur n-O n Delay Time td(on) VDD = 15 V, RL = 3  ID  5 A, VGEN = 10 V, Rg = 1  71 4 Rise Time tr 10 20 Turn-Off Delay T ime td(off) 15 30 Fall Ti me tf 71 4 Drain-Source Bo dy Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 2.8 A Pulse Diode Forw ard Currenta ISM 30 Body Diode Voltage VSD IS = 2 A 0.77 1.1 V Body Diode Reve rse Recovery Time trr IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 17 34 ns Body Diode Rev erse Recovery Charge Qrr 91 8 n C Reve rse Recovery Fall Time ta 10 nS Reverse Recover y Rise Time tb 7 4232BGM www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

S (25 °C, unless otherwise noted) Output Characteristics On-Res istance vs. Drain Current and Gate Voltage Gate Charge 0.0 0.5 1.0 1 .5 2.0 2.5 VGS =1 0V thru 4 V VGS =3V VDS - Drain-to-So urce Voltage (V) - Drain Current (A)I D 0.010 0.014 0.018 0.022 0.026 0.030 0 1 02 03 04 0 5 0 VGS =4 . 5V VGS =1 0 V - On-Resistance (Ω )RDS(on) ID - Drain Current (A) 0.0 3.2 6.4 9 .6 12.8 16 VDS =2 0V VDS =1 0V ID = 8 A VDS =1 5V - Gate-to-So urce Voltage (V) Qg - Total Gate Charge (nC) VGS Transfer Characteristics Capacitance On-Resistan ce vs. Junction Temperature 012345 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to- Source Voltage (V) - Drain Current (A)I D Crss 200 400 600 800 1000 06 1 2 1 8 24 30 C iss Coss VDS - Drain-to-So urce Voltage (V) C - Capacitance (pF) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 ID = 8 A VGS =4 . 5V VGS =1 0V TJ -J unction Temperature (°C) (Normalized) - On-ResistanceRDS(on) 4232BGM www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 ° C, unless otherwise noted) Source-Drain Diode F orward Voltage Threshold Voltage 1.2 0.01 0.001 0.1 100 TJ = 150 °C TJ = 25 °C VSD -S ource-to -Drain Voltage (V) - Source Current (A)I S - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID =5m A Variance (V)VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Volt age Single Pulse Power, Junction-to-Ambient 0.00 0.02 0.04 0.06 0.08 0.10 012 34567 8 91 0 TJ = 25 °C ID = 8 A TJ = 125 °C - On-Resistance (Ω )RDS(on) VGS - Gate-to- Source Voltage (V) 0 111 0 0 .00 .01 Time (s) Power (W) 0.1 Safe Operating Area, Junc tion-to-Ambient 0.01 100 100 0.01 0.1 1m s 10 ms 0.1 1 10 TA = 25 °C Single Pulse Limited byR DS(on)* 10 s DCBVDSS Limited 100 ms VDS - Drain-to-So urce Voltage (V) * VGS > minimu m VGS at which RDS(on) is specified - Drain Current (A)ID 4232BGM www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

S (25 °C, unless otherwise noted) * The power dissipation PD is based on T J(max) = 150 °C, using junction-to-case th ermal resistance, and is more useful in settling the upper dissipati on limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 55 07 5 1 0 0 1 2 5 1 5 0 TC - Case Temperature (°C) I D - Drain Current (A) Power Derating, Jun ction-to-Foot 0.0 0.8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Power Derati ng, Junction-to-Ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 TA -A mbient Temperatu re (°C) Power (W) 4232BGM www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 ° C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square WaveP ulse Duration (s) Normalized Effective T ransient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. P er Unit Base = RthJA =1 1 0 ° C/W TJM -T A =P DMZthJA(t) 4. Surface M ounted Duty Cycle = 0. Single Pulse 0.02 0.05 Normalized Thermal Transient Imp edance, Junction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0. Square WaveP ulse Duration (s) Normalized Effective T ransient Thermal Impedance 0.1 0.01 0.05 Single Pulse 0.02 4232BGM www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.01 4 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S 4232BGM www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Return to Index 4232BGM www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. 4232BGM www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com