4124 UTC | Alldatasheet
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UTC 4124 NPN TRIPLE DIFFUSED SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 www.unisonic.com QW-R204-019,A HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS
DESCRIPTION
UTC 4124 is designed for specially used for electronic ballasters in 110VAC environment.
FEATURES
- Triple diffused technology. * High switching speed TO-126 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number:4124L ABSOLUTE MAXIMUM RATINGS (Tc = 25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V CBO 400 V Collector-Emitter Voltage V CEO 200 V Collector-Emitter Voltage V EBO 7 V Peak Collector Current I C 1.5 A Peak Collector Consume Dissipation P C 20 W Peak Junction Temperature T J 150 ℃ Storage Temperature T STG -40 ~ +150 ℃
ELECTRICAL CHARACTERISTICS
(Ta = 25℃) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Emitter Sustaining Voltage V CEO (SUS) I C=10mA, IB=0 200 V Collector-Base Breakdown Voltage V (BR) CBO I C=1mA, IB=0 400 V Emitter-Base Breakdown Voltage V (BR) EBO I E=1mA, IC=0 7 V Collector-Base Cutoff Current I CBO V CB=400V, IE=0 100 µA Collector-Emitter Cutoff Current I CEO V CE=200V, IB=0 100 µA Emitter-Base Cutoff Current I EBO V EB=7V, Ic=0 100 µA hFE (1) V CE=10V, Ic=0.2A 10 60 DC Current Gain hFE (2) V CE=5V, Ic=1.5A 5 40 Base-Emitter Saturation Voltage V BE (sat) I C=0.8A, IB=0.2A 1.2 V Fall Time tf I C=1A, IB1= -IB2 = 0.2A 0.7 µs Storage Time ts I C=1A, IB1= -IB2 = 0.2A 4 µs Cut-off Frequency f T V CE=10V, Ic=0.1A 4 MHz
UTC 4124 NPN TRIPLE DIFFUSED SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 2 www.unisonic.com QW-R204-019,A CHARACTERISTICS CURVES Safeoperating area Pc ∝Tj IC (A) VCC (V) 0.1 0.01 120 TJ (℃) 100 01000100101 150100500 Is/s Ptot hFE - Ic hFE - Ic 100 0.001 TJ=25℃ VCC=1.5V 0.01 0.1 1 10 100 0.001 TJ=25℃ VCC=5V 0.01 0.1 1 10 hFE Ic (A) hFE Ic (A) TJ=125℃TJ=125℃ V CE ( s a t ) ( V ) - I c V BE (sat) (V) - Ic 0.1 0.01 1 10 Ic (A)
0.1 Vce(sat) (V)
0.1 2.0 11 0 Ic (A) VBE(sat) (V) TJ=25℃ 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 TJ=125℃ TJ=125℃ TJ=25℃ hFE=5 hFE=5
UTC 4124 NPN TRIPLE DIFFUSED SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 3 www.unisonic.com QW-R204-019,A UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.