40TTS12PBF

40TTS12PBF IRF | Alldatasheet

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The 40TTS12PbF SAFEIR series of silicon con- trolled rectifiers are specifically designed for me- dium power switching and phase control applica- tions. The glass passivation technology used has reliable operation up to 140°C junction tempera- ture. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. Major Ratings and Characteristics TO-220 IT(AV) Sinusoidal 25 A waveform IRMS 40 A VRRM / VDRM 1200 V ITSM 350 A VT TJ = 25°C 1.6 V dv/dt 500 V/µs di/dt 150 A/µs TJ - 40 to 140 °C Characteristics Values Units Package Outline PHASE CONTROL SCR Lead-Free ("PbF" suffix) Bulletin I2233 rev. A 11/05 SAFEIR Series 40TTS12PbF VT < 1.6V @ 80A ITSM = 350A VRRM = 1200V 1www.irf.com

Bulletin I2233 rev. A 11/05 www.irf.com Part Number VRRM, maximum V DRM , maximum T J peak reverse voltage peak direct voltage VV ° C 40TTS12PbF 1200 1200 -25 to 140 Voltage Ratings IT(AV) Max. Average On-state Current 25 A @ T C = 93° C, 180° conduction half sine wave IRMS Max. RMS On-state Current 40 ITSM Max. Peak One Cycle Non-Repetitive 300 10ms Sine pulse, rated VRRM applied Surge Current 350 10ms Sine pulse, no voltage reapplied I2t Max. I 2t for fusing 450 A 2s 10ms Sine pulse, rated V RRM applied 630 10ms Sine pulse, no voltage reapplied I2√t Max. I 2√t for fusing 6300 A 2√s t = 0.1 to 10ms, no voltage reapplied VTM Max. On-state Voltage Drop 1.6 V @ 80A, T J = 25°C rt On-state slope resistance 11.4 m Ω TJ = 140°C VT(TO) Threshold Voltage 0.96 V IRM/IDM Max.Reverse and Direct 0.5 mA T J = 25 °C Leakage Current 10 T J = 140 °C IH Holding Current 100 mA Anode Supply = 6V, Resistive load, Initial I T = 1A IL Max. Latching Current 200 mA Anode Supply = 6V, Resistive load dv/dt Max. Rate of Rise of off-state Voltage 500 V/µs di/dt Max. Rate of Rise of turned-on Current 150 A/µs Absolute Maximum Ratings Parameters 40TTS.. Units Conditions VR = rated VRRM/ VDRM

Bulletin I2233 rev. A 11/05 www.irf.com Triggering PGM Max. peak Gate Power 8.0 W PG(AV) Max. average Gate Power 2.0 + IGM Max. paek positive Gate Current 1.5 A - VGM Max. paek negative Gate Voltage 10 V IGT Max. required DC Gate Current 35 mA Anode supply = 6V, resistive load, T J = 25°C to trigger VGT Max. required DC Gate Voltage 1.3 V Anode supply = 6V, resistive load, T J = 25°C to trigger VGD Max. DC Gate Voltage not to trigger 0.2 T J = 140°C, VDRM = rated value IGD Max. DC Gate Current not to trigger 1.5 mA T J = 140°C, VDRM = rated value Parameters 40TTS.. Units Conditions Switching Parameters 40TTS.. Units Conditions tgt Typical turn-on time 0.9 µs T J = 25°C trr Typical reverse recovery time 4 T J = 140°C tq Typical turn-off time 110 TJ Max. Junction Temperature Range - 40 to 140 °C Tstg Max. Storage Temperature Range - 40 to 140 RthJC Max. Thermal Resistance Junction 0.8 °C/W DC operation to Case RthJA Max. Thermal Resistance Junction 60 to Ambient R thCS Typ. Thermal Resistance Case 0.5 Mounting surface, smooth and gre ased to Heatsink wt Approximate Weight 2 (0.07) g (oz.) T Mounting Torque Min. 6 (5) Max. 12 (10) Case Style TO-220AC Thermal-Mechanical Specifications Parameters 40TTS.. Units Conditions Kg-cm (Ibf-in)

Bulletin I2233 rev. A 11/05 www.irf.com Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Average On-state Current (A) Maximum Allowable Case Temperature (°C) Average On-state Current (A) Maximum Allowable Case Temperature (°C) Average On-state Current (A) Maximum Average On-state Power Loss (W) Average On-state Current (A) Maximum Average On-state Power Loss (W) Number of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Pulse Train Duration (s) 100 110 120 130 140 0 5 10 15 20 25 30 30˚ 60˚ 90˚ 120˚ 180˚ Conduction Angle RthJC (DC) = 0.8 ˚C/W 100 110 120 130 140 0 5 10 15 20 25 30 35 40 45 DC 30˚ 60˚ 90˚ 120˚ 180˚ Conduction Period RthJC (DC) = 0.8 ˚C/W 0 5 10 15 20 25 30 RMS Limit Conduction Angle 180˚ 120˚ 90˚ 60˚ 30˚ Tj = 125˚C 0 1 02 03 04 0 DC 180˚ 120˚ 90˚ 60˚ 30˚ RMS Limit Conduction Period Tj = 125˚C 120 140 160 180 200 220 240 260 280 1 10 100 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 125˚C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 100 150 200 250 300 350 400 0.01 0.1 1 10 Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Maximum Non Repetitive Surge Current Initial Tj = 125˚C No Voltage Reapplied Rated Vrrm Reapplied

Bulletin I2233 rev. A 11/05 www.irf.com Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Gate Characteristics Fig. 9 - Thermal Impedance ZthJC Characteristics Instantaneous On-state Voltage (V) Instantaneous On-state Current (A) Instantaneous Gate Voltage (V) Instantaneous Gate Current (A) Square Wave Pulse Duration (s) Transient Thermal Impedance ZthJC (°C/W) 100 1000 012345 Tj = 25˚C Tj = 125˚C 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 Steady State Value (DC Operation) Single Pulse 0.1 100 0.001 0.01 0.1 1 10 100 (b) (a) (4) (3) (2) (1) TJ = 2 5 ˚C Frequency Limited by PG(AV) TJ = - 1 0 ˚C IGD VGD tr = 1 µs, tp >= 6 µs <= 30% rated di/dt: 10 V, 65 ohms b)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs a)Recommended load line for Rectangular gate pulse (1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms T J = 140 ˚C

Bulletin I2233 rev. A 11/05 www.irf.com Outline Table TO-220 Dimensions in millimeters (inches) Part Marking Information 3.78 (0.15) 3.54 (0.14) 10.54 (0.41) MAX. DIA. 15.24 (0.60) 14.84 (0.58) 2.92 (0.11) 2.54 (0.10) TERM 2 14.09 (0.55) 13.47 (0.53) 3.96 (0.16) 3.55 (0.14) 0.94 (0.04) 0.69 (0.03) 4.57 (0.18) 4.32 (0.17) 3 0.61 (0.02) MAX. 5.08 (0.20) REF. 1.32 (0.05) 1.22 (0.05) 6.48 (0.25) 6.23 (0.24) 0.10 (0.004) 1.40 (0.05) 1.15 (0.04) 2.89 (0.11) 2.64 (0.10) 2.04 (0.080) MAX. Anode 1 3 Base Common Cathode Anode Common Cathode INTERNATIONAL RECTIFIER ASSEMBLY LOT CODE EXAMPLE: ASSEMBLED ON WW 19, 2001 THIS IS A 40TTS12 LOT CODE 1789 LOGO P = LEAD-FREE PART NUMBER DATE CODE YEAR 1 = 2001 WEEK 19

Bulletin I2233 rev. A 11/05 www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 11/05 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site.

40 T T S 12 PbF

Ordering Information Table 1 - Current Rating, RMS value 2 - Circuit Configuration T = Single Thyristor T = TO-220 4 - Type of Silicon S = Standard Recovery Rectifier 5 - Voltage Rating (12 = 1200V) 6 - y none = Standard Production y PbF = Lead-Free