40TPS16PBF

40TPS16PBF IRF | Alldatasheet

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Major Ratings and Characteristics IT(AV) Sinusoidal 35 A waveform IRMS 55 A VRRM/ VDRM 1600 V ITSM 500 A VT @ 40 A, TJ = 25°C 1.45 V dv/dt 1000 V/µs di/dt 100 A/µs TJ - 40 to 125 °C Characteristics Values Units TO-247AC Description/ Features The 40TPS16PbF SAFEIR series of silicon con- trolled rectifiers are specifically designed for me- dium power switching and phase control applica- tions. The glass passivation technology used has reliable operation up to 125°C junction tempera- ture. Low Igt parts available. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. Package Outline PHASE CONTROL SCR Lead-Free ("PbF" suffix) Bulletin I2183 11/04 SAFEIR Series 40TPS16PbF VT < 1.45V @ 40A ITSM = 500A VRRM = 1600V www.irf.com

www.irf.com IT(AV) Max. Average On-state Current 35 A @ T C = 79° C, 180° conduction half sine wave IT(RMS) Max. Continuous RMS 55 On-state Current As AC switch ITSM Max. Peak One Cycle Non-Repetitive 500 A 10ms Sine pulse, rated VRRM applied Initial Surge Current 600 10ms Sine pulse, no voltage reapplied TJ = TJ max. I2t Max. I 2t for Fusing 1250 A 2s 10ms Sine pulse, rated V RRM applied 1760 10ms Sine pulse, no voltage reapplied I2√t Max. I 2√t for Fusing 12500 A 2√s t = 0.1 to 10ms, no voltage reapplied VT(TO)1 Low Level Value of Threshold 1.02 V T J = 125°C Voltage VT(TO)2 High Level Value of Threshold 1.23 Voltage rt1 Low Level Value of On-state 9.74 m Ω Slope Resistance rt2 High Level Value of On-state 7.50 Slope Resistance VTM Max. Peak On-state Voltage 1.85 V @ 110A, T J = 25°C di/dt Max. Rate of Rise of Turned-on Current 100 A/µs T J = 25°C IH Max. Holding Current 150 mA IL Max. Latching Current 300 IRRM / Max. Reverse and Direct 0.5 T J = 25°C IDRM Leakage Current 10 T J = 125°C dv/dt Max. Rate of Rise 1000 V/µs T J = TJ max., linear to 80% VDRM , Rg-k = open of Off-state Voltage Voltage Ratings Part Number VRRM/ VDRM, max. repetitive V RSM , maximum non repetitive I RRM/ IDRM peak and off-state voltage peak reverse voltage 125°C VV m A 40TPS16PbF 1600 1700 10 Absolute Maximum Ratings Parameters 40TPS16 Units Conditions VR = rated VRRM/ VDRM

www.irf.com PGM Max. peak Gate Power 10 W PG(AV) Max. average Gate Power 2.5 IGM Max. peak Gate Current 2.5 A - VGM Max. peak negative Gate Voltage 10 V VGT Max. required DC Gate Voltage 4.0 T J = - 40°C Anode supply = 6V to trigger 2.5 T J = 25°C resistive load

1.7 T J = 125°C

IGT Max. required DC Gate Current 270 mA T J = - 40°C to trigger 150 T J = 25°C

80 T J = 125°C

40 T J = 25°C, for 40TPS08A

VGD Max. DC Gate Voltage not to trigger 0.25 V T J = 125°C, VDRM = rated value IGD Max. DC Gate Current not to trigger 6 mA Parameters 40TPS16 Units Conditions Triggering Thermal-Mechanical Specifications TJ Max. Junction Temperature Range - 40 to 125 °C Tstg Max. Storage Temperature Range - 40 to 125 RthJC Max. Thermal Resistance Junction 0.6 °C/W DC op eration to Case RthJA Max. Thermal Resistance Junction 40 to Ambient RthCS Max. Thermal Resistance Case 0.2 Mounting surface, smooth and greased to Heatsink wt Approximate Weight 6 (0.21) g (oz.) T Mounting Torque Min. 6 (5) Kg-cm Max. 12 (10) (lbf-in) Case Style TO-247AC Marking Device 40TPS16 Parameters 40TPS16 Units Conditions

www.irf.com Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 100 110 120 130 0 1 02 03 04 05 06 0 DC 30° 60° 90° 120° 180° Average On-s tate Current (A) Maximum Allowable Cas e T emperature (°C) Conduction P eriod 40T PS .. S eries R (DC) = 0.6 °C/WthJ C 0 5 10 15 20 25 30 35 40 RM S Lim it Conduction Angle Maximum Average On-s tate Power L oss (W) Average On-s tate Current (A) 180° 120° 90° 60° 30° 4 0 TPS. . Se r i e s T = 125 ° CJ 0 1 02 03 04 05 06 0 DC 180° 120° 90° 60° 30° RM S Lim it Conduction P eriod Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) 40TPS.. Series T = 125°CJ 250 300 350 400 450 500 550 1 10 100 Number Of E qual Amplitude Half Cycle Current P uls es (N) P eak H alf Sine Wave On-s tate Current (A) Initia l T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J 4 0 TPS. . Se r i e s At Any R ated L oad Condition And With R ated V Applied F ollowing S urge.RRM 250 300 350 400 450 500 550 600 0.01 0.1 1 P eak H alf S ine Wave On-s tate Current (A) P uls e T rain Duration (s ) Maximum Non R epetitive S urge Current Versus P ulse Train Duration. Control Of Conduction May Not B e Maintained. 40T PS .. S eries Initial T = 125°C No Voltage R eappl ied R ated V R eappl ied J RRM 100 110 120 130 01 0 2 0 3 0 4 0 30° 60° 90° 120° 180° Maximum Allowable Cas e T emperature (°C) Conduction Angle Average On-s tate Current (A) 40T PS .. S eries R (DC) = 0.6 °C/ WthJC

www.irf.com Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - GateCharacteristics Fig. 9 - Thermal Impedance ZthJC Characteristics 0.1 100 0.001 0.01 0.1 1 10 100 1000 (b) (a) R ectangul ar gate puls e (4) (3) (2) (1) (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms Ins tantaneous Gate Current (A) Ins tantaneous Gate Voltage (V) TJ = -40 °C TJ = 25 °C TJ = 125 °C a)R ecommended load line for b)R ecommended load line for VGD IGD F requency L imited by P G(AV) ra ted di/ dt : 20 V, 30 ohms tr = 0.5 µs , tp >= 6 µs <= 30% ra t ed d i/ dt: 20 V, 65 ohms tr = 1 µs, tp >= 6 µs 40T PS .. 100 0.5 1 1.5 2 T = 2 5° C Ins tantaneous On-s tate Current (A) Ins tantaneous On-s tate Voltage (V) T = 125°C J 40T PS .. S eries J 0.01 0.1 0.0001 0.001 0.01 0.1 1 S quare Wave Pulse Duration (s) S teady S tate Value (DC Operation) S ingle Pulse D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 4 0 TP S. . Se r i e s thJCT rans ient T hermal Impedance Z (°C/W)

www.irf.com Outline Table Dimensions in millimeters and inches 15.90 (0 .626 ) 15.30 (0 .602 ) 14 .20 (0 .559) 14.80 (0.583) 3. 70 (0 .145) 4. 30 (0 .170) 5.30 (0.208) 5.70 (0.225) 5.50 ( 0.217) 4. 50 (0.17 7) (2 PLCS.) 3. 55 (0 .139) 3. 65 (0 .144) 2.20 (0.087) MAX. 1. 00 (0 .039) 1. 40 (0 .056) 0. 40 (0 .213) 0.80 (0.032) 4.70 (0.185) 5.30 (0.209) 1.5 (0.059) 2.5 (0.098) 2. 40 (0 .095) MA X. 10 .86 (0.427) 10. 94 ( 0.430) 20 .30 (0.800) 19 .70 (0.775) DIA. 12 3 Marking Information RECTIFIER INTERNATIONAL ASSEMBLY LOT CODE EXAMPLE: IN ASSEMBLY LINE "H" ASSEMBLED ON WW 35, 2000 WITH ASSEMBLY LOT CODE 5657 LOGO P = LEAD-FREE YEAR 0 = 2000 PART NUMBER LINE H WEEK 35 56 57 P035H DATE CODE THIS IS A 40TPS16 40TPS16 (G) 3 (A) 1 (K)

www.irf.com Ordering Information Table

40 T P S 16 PbF

1 - Current Rating (40 = 40A) 2 - Circuit Configuration: T = Thyristor T = TO-247 4 - Type of Silicon: S = Standard Recovery Rectifier 5 - Voltage Rating (16 = 1600V) 6 - y none = Standard Production y PbF = Lead-Free IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 11/04 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site.