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Technical content

Features

 High Speed Switching & Low Power Loss  VCE(sat) = 1.95V @ IC = 40A  Eoff = 0.3mJ @ TC = 25°C  High Input Impedance  trr = 80ns (typ.) @diF/dt = 1000A/ μs  Maximum junction temperature 175°C

Applications

 PFC  UPS  PV Inverter General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications. TO-247  Welder  IH Cooker

Sep. 2015 Revision 0.0 MagnaChip Semiconductor Ltd. 2 MBQ40T65FESC 650V Field Stop IGBT

Ordering Information

Part Number Marking Temp. Range Package Packing RoHS Status MBQ40T65FESCTH 40T65FESC -55~175°C TO-247 Tube Halogen Free Electrical Characteristic (Tvj = 25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Static Characteristic Collector-emitter breakdown voltage BVCES IC = 2mA, VGE = 0V 650 - - V Collector-emitter saturation voltage VCE(sat) IC = 40A, VGE= 15V Tvj = 25°C 1.95 2.4 V Tvj = 175°C 2.3 Diode forward voltage VF VGE = 0V, IF = 20A Tvj = 25°C 1.5 1.9 V Tvj = 175°C 1.4 Gate-emitter threshold voltage VGE(th) VCE = VGE, IC = 0.5mA 4.0 5.0 6.0 V Zero gate voltage collector current ICES VCE = 650V, VGE = 0V, Tvj = 25°C - - 40 μA Gate-emitter leakage current IGES VGE = 20V, VCE = 0V - - ±100 nA Dynamic Characteristic Total gate charge Qg VCE = 520V, IC = 40A, VGE = 15V - 218 nC Gate-emitter charge Qge - 33 Gate-collector charge Qgc - 136 Input capacitance Cies VCE = 25V, VGE = 0V, f = 1MHz - 3342 - pF Reverse transfer capacitance Cres - 120 - Output capacitance Coes - 198 - Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13.0 - nH Short circuit collector current Max. 1000 short circuits Time between short circuits: ≥ 1.0s IC(SC) VGE = 15V, VCC = 400V, tSC ≤ 5μs, Tvj = 150°C - 120 - A Switching Characteristic Turn-on delay time td(on) VGE = 15V, VCC = 400V, IC = 40A, RG = 7.9Ω, Inductive Load, Tvj = 25°C - 50 - ns Rise time tr - 49 - Turn-off delay time td(off) - 318 - Fall time tf - 36 - Turn-on switching energy Eon - 0.68 - mJ Turn-off switching energy Eoff - 0.30 - Total switching energy Ets - 0.98 - Turn-on delay time td(on) VGE = 15V, VCC = 400V, IC = 40A, RG = 7.9Ω, Inductive Load, Tvj = 175°C - 45 - ns Rise time tr - 57 - Turn-off delay time td(off) - 366 - Fall time tf - 47 - Turn-on switching energy Eon - 0.95 - mJ Turn-off switching energy Eoff - 0.36 - Total switching energy Ets - 1.31 - Reverse recovery time trr IF = 20A, diF/dt = 1000A/ μs, Tvj = 25°C - 80 - ns Reverse recovery current Irr - 20 - A Reverse recovery charge Qrr - 0.8 - μC Reverse recovery time trr IF = 20A, diF/dt = 1000A/ μs, Tvj = 175°C - 92 - ns Reverse recovery current Irr - 28 - A Reverse recovery charge Qrr - 1.3 - nC

Sep. 2015 Revision 0.0 MagnaChip Semiconductor Ltd. 3 MBQ40T65FESC 650V Field Stop IGBT

Sep. 2015 Revision 0.0 MagnaChip Semiconductor Ltd. 4 MBQ40T65FESC 650V Field Stop IGBT

Sep. 2015 Revision 0.0 MagnaChip Semiconductor Ltd. 5 MBQ40T65FESC 650V Field Stop IGBT

Sep. 2015 Revision 0.0 MagnaChip Semiconductor Ltd. 6 MBQ40T65FESC 650V Field Stop IGBT

Sep. 2015 Revision 0.0 MagnaChip Semiconductor Ltd. 7 MBQ40T65FESC 650V Field Stop IGBT E D Q L e b A A1c ΦP S Physical Dimension TO-247 Dimensions are in millimeters, unless otherwise specified Dimension Min(mm) Max(mm) A 4.70 5.31 A1 2.20 2.60 A2 1.50 2.49 b 0.99 1.40 b1 2.59 3.43 b2 1.65 2.39 c 0.38 0.89 D 20.30 21.46 D1 13.08 - E 15.45 16.26 E1 13.06 14.02 E2 4.32 5.49 e 5.45BSC L 19.81 20.57 L1 - 4.50 ΦP 3.50 3.70 Q 5.38 6.20 S 6.15BSC

Sep. 2015 Revision 0.0 MagnaChip Semiconductor Ltd. 8 MBQ40T65FESC 650V Field Stop IGBT DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircra ft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consid er responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registere d trademark of MagnaChip Semiconductor Ltd.