40P03 KEXIN | Alldatasheet

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Technical content

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1 GATE

2 DRAIN

3 SOURCE

4.50 ±0.20 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 2.80 ±0.10 15.90 ±0.20 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 9.20 ±0.20 13.08 ±0.20 1.30 ±0.10 1.30 +0.10 –0.05 0.50 +0.10 –0.05 2.54TYP [2.54 ±0.20 2.54TYP [2.54 ±0.20 P-Channel Enhancement MOSFET 40P03 ■ Features

  • VDS (V) =-30V,ID =-30 A
  • RDS(ON) ＜ 28mΩ (VGS =-10V)
  • RDS(ON) ＜ 50mΩ (VGS =-4.5V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VD S -30 Gate-Source Voltage VGS ±20 Continuous Drain Current TC=25℃ -30 TC=100℃ -18 Pulsed Drain Current IDM -120 Power Dissipation PD 31.3 W Thermal Resistance.Junction- to-Ambient RthJA 110 Thermal Resistance.Junction- to-Case Rthc 4 Junction and Storage Temperature Range TJ, TSTG -55 to 150 ℃ V ℃/W A ID G D S

www.kexin.com.cn2 SMD Type ICMOSFETDIP Type 40P03 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -30 V VDS=-30V, VGS=0V -1 VDS=-24V, VGS=0V, TJ=150℃ -25 Gate-Body leakage current IGSS VDS=0V, VGS=±20V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -1 -3 V VGS=-10V, ID =-18A 28 VGS=-4.5V, ID=-10A 50 Forward Transconductance gFS VDS=-10V, ID=-18A 20 S Input Capacitance Ciss 915 1465 Output Capacitance Coss 280 Reverse Transfer Capacitance Crss 195 Total Gate Charge Qg 14 22 Gate Source Charge Qgs 3 Gate Drain Charge Qgd 9 Turn-On DelayTime td(on) 12 Turn-On Rise Time tr 56 Turn-Off DelayTime td(off) 30 Turn-Off Fall Time tf 57 Body Diode Reverse Recovery Time trr IS=-18A, dI/dt=-100A/μs 30 Body Diode Reverse Recovery Charge Qrr IS=-18A, dI/dt=-100A/μs 21 nC Diode Forward Voltage VSD IS=-18A,VGS=0V -1.2 V pF nC ns Zero Gate Voltage Drain Current IDSS μA mΩ VGS=-10V, VDS=-15V, RD =0.8Ω, RG=3.3Ω， ID=-18A RDS(On)Static Drain-Source On-Resistance VGS=0V, VDS=-25V, f=1MHz VGS=-4.5V, VDS=-24V, ID=-18A

www.kexin.com.cn 3 DIP Type MOSFET ■ Typical Characteristics v.s. Junction Temperature 2468 1 0 GS , Gate-to-Source Voltage (V) R DS(ON) Ω I D = -10 A T C =25 100 120 02468 DS , Drain-to-Source Voltage (V) D , Drain Current (A) T A =2 5 o C -10V -7.0V -5.0V -4.5V V G = -3.0 V 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o Normalized R DS(ON) I D =-1 8 A V G =-10V SD , Source-to-Drain Voltage (V) S (A) T j =25 o CT j =150 o C 0.0 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 T j , Junction Temperature ( o Normalized -V GS(th) (V) 100 02468 DS , Drain-to-Source Voltage (V) D , Drain Current (A) T A =150 o C -10V -7.0V -5.0V -4.5V V G = -3.0 V 40P03

www.kexin.com.cn4 DIP Type MOSFET 0 5 10 15 20 25 30 Q G , Total Gate Charge (nC) GS , Gate to Source Voltage (V) V DS =- 24 V I D =-1 8 A 100 1000 10000 1 5 9 1 31 72 12 52 9 DS , Drain-to-Source Voltage (V) C (pF) f =1.0MH z C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc P DM Duty factor = t/T Peak T j = P DM x R thjc + T C t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 1.0 10.0 100.0 1000.0 0.1 1 10 100 DS , Drain-to-Source Voltage (V) D (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC ■ Typical Characteristics 40P03