NGTB40N60FLWG ONSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Low Saturation V oltage using Trench with Field Stop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5 /C0109s Short−Circuit Capability
  • These are Pb−Free Devices Typical Applications
  • Solar Inverters
  • Uninterruptable Power Supply (UPS) ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC A Pulsed collector current, Tpulse limited by TJmax ICM 160 A Diode Forward Current @ TC = 25°C @ TC = 100°C IF A Diode Pulsed Current Tpulse Limited by TJmax IFM 160 A Short−circuit withstand time VGE = 15 V, VCE = 300 V, TJ ≤ +150°C tSC 5 /C0109s Gate−emitter voltage Transient Gate Emitter Voltage VGE /C003620 /C003630 V Power Dissipation @ TC = 25°C @ TC = 100°C PD 257 102 W Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO−247 CASE 340L STYLE 4 C G

40 A, 600 V

VCEsat = 1.85 V E Device Package Shipping

ORDERING INFORMATION

NGTB40N60FLWG TO −247 (Pb−Free)

30 Units / Rail

http://onsemi.com A = Assembly Location Y = Year WW = Work Week G = Pb −Free Package MARKING DIAGRAM 40N60FL AYWWG G E C

http://onsemi.com THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junction−to−case, for IGBT R/C0113JC 0.470 °C/W Thermal resistance junction−to−case, for Diode R/C0113JC 1.06 °C/W Thermal resistance junction−to−ambient R/C0113JA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 500 /C0109A V(BR)CES 600 − − V Collector−emitter saturation voltage VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 150°C VCEsat 1.6 1.85 2.3 2.1 V Gate−emitter threshold voltage VGE = VCE, IC = 200 /C0109A VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − 0.2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 100 nA DYNAMIC CHARACTERISTIC Input capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Cies − 4200 − pF Output capacitance Coes − 170 − Reverse transfer capacitance Cres − 110 − Gate charge total VCE = 480 V, IC = 40 A, VGE = 15 V Qg − 171 − nC Gate to emitter charge Qge − 36 − Gate to collector charge Qgc − 83 − SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time TJ = 25°C VCC = 400 V, IC = 40 A Rg = 10 /C0087 VGE = 0 V/ 15 V td(on) − 85 − ns Rise time tr − 37 − Turn−off delay time td(off) − 174 − Fall time tf − 73 − Turn−on switching loss Eon − 0.89 − mJ Turn−off switching loss Eoff − 0.44 − Total switching loss Ets − 1.33 − Turn−on delay time TJ = 150°C VCC = 400 V, IC = 40 A Rg = 10 /C0087 VGE = 0 V/ 15 V td(on) − 82 − ns Rise time tr − 38 − Turn−off delay time td(off) − 179 − Fall time tf − 95 − Turn−on switching loss Eon − 1.10 − mJ Turn−off switching loss Eoff − 0.84 − Total switching loss Ets − 1.94 −

http://onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter UnitMaxTypMinSymbolTest Conditions DIODE CHARACTERISTIC Forward voltage VGE = 0 V, IF = 40 A VGE = 0 V, IF = 40 A, TJ = 150°C VF 1.55 2.2 2.3 2.60 V Reverse recovery time TJ = 25°C IF = 40 A, VR = 200 V diF/dt = 200 A//C0109s trr − 77 − ns Reverse recovery charge Qrr − 0.35 − /C0109C Reverse recovery current Irrm − 7 − A

Figure 1. Output Characteristics Figure 2. Output Characteristics Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance

8 V7 V

7 V to 8 V

Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE Figure 17. Safe Operating Area

1000 SWITCHING LOSS (mJ)

Figure 18. Reverse Bias Safe Operating Area

TO−247 CASE 340L ISSUE G DATE 06 OCT 2021 GENERIC MARKING DIAGRAM* XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb −Free Package STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SCALE 1:1 STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 2: PIN 1. ANODE 2. CATHODE (S) 3. ANODE 2 4. CATHODES (S) STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR XXXXXXXXX AYWWG STYLE 6: PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. MAIN TERMINAL 2 STYLE 5: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “/C0071”, may or may not be present. Some products may not follow the Generic Marking. MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. 98ASB15080CDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1TO−247 © Semiconductor Components Industries, LLC, 2021 www.onsemi.com

onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative