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Technical content

Features

  • Low Saturation V oltage using Trench with Field Stop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Optimized for Low Case Temperature in IH Cooker Application
  • Low Gate Charge
  • These are Pb−Free Devices Typical Applications
  • Inductive Heating
  • Consumer Appliances
  • Soft Switching ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC A Pulsed collector current, Tpulse limited by TJmax ICM 320 A Diode forward current @ TC = 25°C @ TC = 100°C IF A Diode pulsed current, Tpulse limited by TJmax IFM 320 A Gate−emitter voltage VGE /C003620 V Power Dissipation @ TC = 25°C @ TC = 100°C PD 260 104 W Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO−247 CASE 340L STYLE 4 C G

40 A, 1200 V

VCEsat = 1.90 V Eoff = 1.40 mJ E Device Package Shipping

ORDERING INFORMATION

NGTB40N120IHLWG TO −247 (Pb−Free)

30 Units / Rail

http://onsemi.com A = Assembly Location Y = Year WW = Work Week G = Pb −Free Package MARKING DIAGRAM 40N120IHL AYWWG G E C

http://onsemi.com THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junction−to−case, for IGBT R/C0113JC 0.48 °C/W Thermal resistance junction−to−case, for Diode R/C0113JC 1.5 °C/W Thermal resistance junction−to−ambient R/C0113JA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 500 /C0109A V(BR)CES 1200 − − V Collector−emitter saturation voltage VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 150°C VCEsat − 1.90 2.1 2.35 V Gate−emitter threshold voltage VGE = VCE, IC = 400 /C0109A VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 150°C ICES − 0.5 2.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 200 nA DYNAMIC CHARACTERISTIC Input capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Cies − 10400 − pF Output capacitance Coes − 245 − Reverse transfer capacitance Cres − 185 − Gate charge total VCE = 600 V, IC = 40 A, VGE = 15 V Qg 420 nC Gate to emitter charge Qge 95 Gate to collector charge Qgc 178 SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−off delay time TJ = 25°C VCC = 600 V, IC = 40 A Rg = 10 /C0087 VGE = 0 V/ 15V td(off) 360 ns Fall time tf 130 Turn−off switching loss Eoff 1.40 mJ Turn−off delay time TJ = 125°C VCC = 600 V, IC = 40 A Rg = 10 /C0087 VGE = 0 V/ 15V td(off) 380 ns Fall time tf 185 Turn−off switching loss Eoff 2.6 mJ DIODE CHARACTERISTIC Forward voltage VGE = 0 V, IF = 40 A VGE = 0 V, IF = 40 A, TJ = 150°C VF 1.6 1.8 1.8 V

Figure 1. Output Characteristics Figure 2. Output Characteristics Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics Figure 5. Typical Capacitance Figure 6. Diode Forward Characteristics

8 V TJ = 25°C

Figure 21. Definition of Turn Off Waveform

http://onsemi.com PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE F N P A K W F D G U E 0.25 (0.010) M YQ S J H C 123 −T− −B− −Y− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 PL 3 PL 0.63 (0.025) M TB M −Q− L DIM MIN MAX MIN MAX INCHESMILLIMETERS A 20.32 21.08 0.800 8.30 B 15.75 16.26 0.620 0.640 C 4.70 5.30 0.185 0.209 D 1.00 1.40 0.040 0.055 E 1.90 2.60 0.075 0.102 F 1.65 2.13 0.065 0.084 G 5.45 BSC 0.215 BSC H 1.50 2.49 0.059 0.098 J 0.40 0.80 0.016 0.031 K 19.81 20.83 0.780 0.820 L 5.40 6.20 0.212 0.244 N 4.32 5.49 0.170 0.216 Q 3.55 3.65 0.140 0.144 U 6.15 BSC 0.242 BSC W 2.87 3.12 0.113 0.123 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a numb er of patents, trademarks, reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 NGTB40N120IHLW/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative