40N10 CHONGQING | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
- 页码 - Rev. 14-1 http:// www.perfectway.cn 40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE 40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Lowgatecharge LowCiss Fastswitching 100%avalanchetested Improveddv/dtcapability TO-220AB ITO-220AB 40N10 40N10F TO-263 TO-262 40N10B 40N10H Absolute Maximum Ratings(TC=25℃,unlessotherwisenoted) Parameter Symbol 40N10 UNIT Drain-SourceVoltage VDSS 100 V Gate-SourceVoltage VGSS ±20 ContinuousDrainCurrent ID 40 A PulsedDrainCurrent(Note1) IDM 100 SinglePulseAvalancheEnergy(Note2) EAS 500 mJ AvalancheCurrent(Note1) IAR 40 A RepetitiveAvalancheEnergy(Note1) EAR 50 mJ ReverseDiodedV/dt(Note3) dv/dt 4.0 V/ns OperatingJunctionandStorageTemperatureRange TJ,TSTG -55to+150 ℃ Maximumleadtemperatureforsolderingpurposes, 1/8"fromcasefor5seconds TL 260 ℃ MountingTorque 6-32orM3screw 10 lbf·in
1.1 N·m
Parameter Symbol ITO-220 TO-220 TO-262 TO-263 Units MaximumJunction-to-Case RthJC 2.5 1.25 1.25 ℃/W MaximumPowerDissipation TC=25℃ PD 50 100 100 W
- 页码 - Rev. 14-1 http:// www.perfectway.cn Electrical Characteristics (Tc=25℃,unlessotherwisenoted) Parameter Symbol Test Conditions Mix Typ Max Units Off Characteristics Drain-SourceBreakdownVoltage BVDSS VGS=0V,ID=250uA 100 － － V BreakdownTemperatureCoefficient ΔBVDSS /ΔTJ Referenceto25℃， ID=250uA － 0.5 － V/℃ ZeroGateVoltageDrainCurrent IDSS VDS=100V,VGS=0V － － 1 uA Gate-BodyLeakageCurrent,Forward IGSSF VGS=20V,VDS=0V － － 100 nA Gate-BodyLeakageCurrent,Reverse IGSSR VGS=-20V,VDS=0V － － -100 nA On Characteristics Gate-SourceThresholdVoltage VGS(th) VDS=VGS,ID=250uA 2 － 4 V Drain-SourceOn-StateResistance RDS(on) VGS=10V,ID=20A － － 40 mΩ Dynamic Characteristics InputCapacitance Ciss VDS=25V,VGS=0V, f=1.0MHZ － 680 880 pF OutputCapacitance Coss － 75 100 pF ReverseTransferCapacitance Crss － 3.8 － pF Switching Characteristics Turn-OnDelayTime td(on) VDD=40V,ID=40A, RG=25Ω (Note4,5) － 17 － ns Turn-OnRiseTime tr － 30 － ns Turn-OffDelayTime td(off) － 42 － ns Turn-OffFallTime tf － 20 － ns TotalGateCharge Qg VDS=80V,ID=40A, VGS=10V,(Note4,5) － － 300 nC Gate-SourceCharge Qgs － － 150 nC Gate-DrainCharge Qgd － － 7.5 nC Drain-Source Body Diode Charcteristics and Maximum Ratings ContinuousDiodeForward Current IS － － 40 A PulsedDiodeForwardCurrent ISM － － 160 A DiodeForwardVoltage VSD IS=40A,VGS=0V － － 1.5 V ReverseRecoveryTime trr VGS=0V,IS=40A, dIF/dt=100A/us, (Note4) － 575 － ns ReverseRecoveryCharge Qrr － 3.65 － uC Notes 1. RepetitiveRating:pulsewidthlimitedbymaximumjunctiontemperature. 2. VDD=20V,L=0.5mH,Rg=25Ω,IAS=40A,TJ=25℃. 3. ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,startingTJ=25℃. 4. Pulsewidth≤300us;dutycycle≤2%. 5. Repetitiverating;pulsewidthlimitedbymaximumjunctiontemperature.