40N06 UMW | Alldatasheet
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VDS =60V,ID=40A RDS(ON),14mΩ(Typ)@VGS=10V RDS(ON),16mΩ(Typ)@VGS=4.5V Advanced TrenchTechnology Excellent RDS(ON) andLowGateCharge Leadfreeproduct isacquired Application Load Switch PowermanagementP ackageMarking andOrderingInformation DeviceMarking Device DevicePackage ReelSize Tapewidth Quantity 40N06 40N06 TO-252 330mm 12mm 2500 Absolute MaximumRatings(TA=25℃ unlessotherwise noted) Parameter Symbol Value Unit Drain-SourceVoltage VDS 60 V Gate-SourceVoltage VGS ±20 V DrainCurrent-ContinuousNote3 TC=25℃ ID 50 A TC=100℃ 33 A DrainCurrent-PulsedNote1 IDM 200 A AvalancheEnergyNote4 EAS 64 mJ MaximumPowerDissipation TC=25℃ PD 105 W StorageTemperatureRange TSTG -55to+150 ℃ OperatingJunctionTemperatureRange TJ -55to+150 ℃ ThermalResistance Parameter Symbol Min. Typ. Max Unit ThermalResistance,Junction-to-Case RθJC - - 1.4 ℃/W U MW UMW 40N06 R UMW 40N06 www.umw-ic.com 1 友台半导体有限公司
ElectricalCharacteristics(TJ=25℃ unless otherwise noted) OFF CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-SourceBreakdown Voltage BVDSS VGS=0V,IDS=250uA 60 - - V Zero GateVoltage DrainCurrent IDSS VDS=60V,VGS=0V - - 1.0 uA Gate-BodyLeakage IGSS VGS=±20V,VDS=0V - - ±100 nA ON CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit GateThreshold Voltage VGS(TH) VDS=VGS,IDS=250uA 1.0 1.6 2.5 V Drain-SourceOn-State Resistance RDS(ON)V GS=10V,IDS=30A - 14 18 mΩ VGS=4.5V,IDS=20A - 16 22 mΩ DYNAMIC CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit InputCapacitance CiSS VDS=25V,VGS=0V, f=1MHz - 2928 - pFOutputCapacitance COSS - 141 - ReverseTransfer Capacitance Crss - 120 - SWITCHING CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Turn-OnDelayTime Td(on) VGS=10V,VDs=30V, RGEN=1.8Ω ID=25A - 7.5 - ns RiseTime tr - 6.0 - Turn-OffDelayTime Td(off) - 28.4 - FallTime tf - 5.5 - TotalGate Charge at10V Qg VDS=30V,IDS=25A, VGS=10V - 50 - nCGateto SourceGate Charge Qgs - 6 - Gateto Drain“Miller”Charge Qgd - 15 - DRAIN-SOURCEDIODE CHARACTERISTICSAND MAXIMUM RATINGS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-SourceDiode ForwardVoltage VSD VGS=0V,IDS=30A - - 1.2 V Reverse RecoveryTime trr TJ=25℃,IF=25A di/dt=100A/us - 29 - nS Reverse RecoveryCharge Qrr - 42 - nC Notes: 1:Repetitive rating, pulsewidth limited bymaximum junction temperature. 2:Surface mountedon FR4Board,t≤10sec. 3:Pulse width≤300μs,duty cycle ≤2%. 4:EAS condition: L=0.5mH,VDD=10V,VG=10V,VGATE=20V,StartTJ=25℃. www.umw-ic.com 2 友台半导体有限公司 U MW UMW 40N06 R
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