40MT120UH IRF | Alldatasheet

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Technical content

Features

VCES Collector-to-Emitter Breakdown Voltage 1200 V I C Continuos Collector Current @ T C = 25°C 80 A @ TC = 105°C 40 I CM Pulsed Collector Current 160 I LM Clamped Inductive Load Current 160 I F Diode Continuous Forward Current @ T C = 105°C 21 I FM Diode Maximum Forward Current 160 VGE Gate-to-Emitter Voltage ± 20 V VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 PD Maximum Power Dissipation (only IGBT) @ T C = 25°C 463 W @ TC = 100°C 185 Parameters Max Units

  • Optimized for Welding, UPS and SMPS

Applications

  • Rugged with UltraFast Performance
  • Benchmark Efficiency above 20KHz
  • Outstanding ZVS and Hard Switching Operation
  • Low EMI, requires Less Snubbing
  • Excellent Current Sharing in Parallel Operation
  • Direct Mounting to Heatsink
  • PCB Solderable Terminals Benefits MMTP 40MT120UH "HALF-BRIDGE" IGBT MTP UltraFast NPT IGBT I27126 rev. C 02/03 1www.irf.com

I27126 rev. C 02/03 2 www.irf.com V(BR)CES Collector-to-Emitter Breakdown Voltage1200 V V GE = 0V, I C = 250µA ∆V(BR)CES/ Temperature Coeff. of +1.1 V/°C V GE = 0V, I C = 3mA (25-125°C) ∆TJ Breakdown Voltage VCE(ON) Collector-to-Emitter Saturation Voltage 3.36 3.59 V V GE = 15V, I C = 40A 4.53 4.91 V GE = 15V, I C = 80A 3.88 4.10 V GE = 15V, I C = 40A T J = 150°C 5.35 5.68 V GE = 15V, I C = 80A T J = 150°C VGE(th) Gate Threshold Voltage 4 6 V V CE = V GE, I C = 500µA ∆VGE(th) / Temperature Coeff. of -12 mV/°C V CE = V GE, I C = 1mA (25-125°C) ∆TJ Threshold Voltage gfe Transconductance 35 S V CE = 50V, I C = 40A, PW = 80µs ICES Zero Gate Voltage Collector Current 250 µA V GE = 0V, V CE = 1200V, T J = 25°C 0.4 1.0 mA V GE = 0V, V CE = 1200V, T J = 125°C 0.2 10 V GE = 0V, V CE = 1200V, T J = 150°C IGES Gate-to-Emitter Leakage Current ±250 nA V GE = ± 20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Qg Total Gate Charge (turn-on) 399 599 nC I C = 40A Qge Gate-Emitter Charge (turn-on) 43 65 V CC = 600V Qgc Gate-Collector Charge (turn-on) 187 281 V GE = 15V Eon Turn-On Switching Loss 1142 1713 µJ V CC = 600V, IC = 40A Eoff Turn-Off Switching Loss 1345 2018 V GE = 15V, Rg = 5Ω, L = 200µH Etot Total Switching Loss 2487 3731 T J = 25°C, Energy losses include tail and diode reverse recovery Eon Turn-On Switching Loss 1598 2397 µJ V CC = 600V, IC = 40A Eoff Turn-Off Switching Loss 1618 2427 V GE = 15V, Rg = 5Ω, L = 200µH Etot Total Switching Loss 3216 4824 T J = 125°C, Energy losses include tail and diode reverse recovery Cies Input Capacitance 5521 8282 pF V GE = 0V Coes Output Capacitance 380 570 V CC = 30V Cres Reverse Transfer Capacitance 171 257 f = 1.0 MHz RBSOA Reverse Bias Safe Operating Area full square T J = 150°C, IC = 160A VCC = 1000V, Vp = 1200V Rg = 5Ω, VGE = +15V to 0V SCSOA Short Circuit Safe Operating Area 10 µs T J = 150°C VCC = 900V, Vp = 1200V Rg = 5Ω, VGE = +15V to 0V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions

Bulletin I27126 rev. B 10/02 40MT120UH www.irf.com VFM Diode Forward Voltage Drop 2.98 3.38 V I C = 40A 3.90 4.41 I C = 80A 3.08 3.39 I C = 40A, T J = 125°C 4.29 4.72 I C = 80A, T J = 125°C 3.12 3.42 I C = 40A, T J = 150°C Erec Reverse Recovery Energy of the Diode 574 861 µJ V GE = 15V, Rg = 5Ω, L = 200µH trr Diode Reverse Recovery Time 120 180 ns V CC = 600V, IC = 40A Irr Peak Reverse Recovery Current 43 65 A T J = 125°C Thermal- Mechanical Specifications TJ Operating Junction Temperature Range - 40 150 °C TSTG Storage Temperature Range - 40 125 RthJC Junction-to-Case IGBT 0.20 0.27 °C/ W Diode 0.39 0.59 RthCS Case-to-Sink Module 0.06 (Heatsink Compound Thermal Conductivity = 1 W/mK) Clearance ( external shortest distance in air 5.5 mm between two terminals) Creepage ( shortest distance along external 8 surface of the insulating material between 2 terminals) T Mounting torque to heatsink (3) 3 ± 10% Nm Wt Weight 66 g (oz) Parameters Min Typ Max Units Diode Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions R0 (1) Resistance 30 k Ω T0 = 25°C β (1) (2) Sensitivity index of the thermistor 4000 K T 0 = 25°C material T 1 = 85°C Thermistor Specifications (40MT120UHT only) Parameters Min Typ Max Units Test Conditions (2) = exp [ β ( )], Temperatures in Kelvin1 (1) T0,T1 are thermistor's temperatures 1 T (3) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads

I27126 rev. C 02/03 4 www.irf.com Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 150°C Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V 1 10 100 1000 10000 VCE (V) 0.01 0.1 100 1000 IC (A) 10 µs 100 µs 10ms DC 0 20 40 60 80 100 120 140 160 TC (°C) 100 IC (A) 10 100 1000 10000 VCE (V) 100 1000 IC (A) 0 20 40 60 80 100 120 140 160 TC (°C) 100 200 300 400 500 600 PD (W)

Bulletin I27126 rev. B 10/02 40MT120UH www.irf.com Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs Fig. 7 - Typ. IGBT Output Characteristics TJ = 125°C; tp = 80µs 02468 1 0 VCE (V) 100 120 140 160 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 02468 1 0 VCE (V) 100 120 140 160 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 02468 1 0 VCE (V) 100 120 140 160 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VF (V) 100 120 IF (A) -40°C 25°C 125°C

I27126 rev. C 02/03 6 www.irf.com Fig. 10 - Typical VCE vs. VGE TJ = 25°C Fig. 9 - Typical VCE vs. VGE TJ = -40°C Fig. 11 - Typical VCE vs. VGE TJ = 125°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs 51 0 1 5 2 0 VGE (V) VCE (V) ICE = 80A ICE = 40A ICE = 20A 51 0 1 5 2 0 VGE (V) VCE (V) ICE = 80A ICE = 40A ICE = 20A 5 1 01 52 0 VGE (V) VCE (V) ICE = 80A ICE = 40A ICE = 20A 0 5 10 15 20 VGE (V) 100 150 200 250 300 350 ICE (A) TJ = 25°C TJ = 125°C

Bulletin I27126 rev. B 10/02 40MT120UH www.irf.com Fig. 14 - Typ. Switching Time vs. IC TJ = 125°C; L=250µH; VCE= 400V RG= 5Ω; VGE= 15V Fig. 13 - Typ. Energy Loss vs. IC TJ = 125°C; L=250µH; VCE= 400V RG= 5Ω; VGE= 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 150°C; L=250µH; VCE= 600V ICE= 40A; VGE= 15V Fig. 15 - Typ. Energy Loss vs. RG TJ = 150°C; L=250µH; VCE= 600V ICE= 40A; VGE= 15V 0 2 04 06 08 0 1 0 0 IC (A) 600 1200 1800 2400 3000 3600 4200 4800 Energy (µJ) EOFF EON 0 20 40 60 80 100 IC (A) 100 1000 Swiching Time (ns) tR tdOFF tF tdON 0 10 20 30 40 50 60 RG (Ω) 1000 2000 3000 4000 5000 6000 Energy (µJ) EON EOFF 0 10 20 30 40 50 60 RG (Ω) 100 1000 10000 Swiching Time (ns) tR tdOFF tF tdON

I27126 rev. C 02/03 8 www.irf.com Fig. 17 - Typical Diode IRR vs. IF TJ = 125°C Fig. 18 - Typical Diode IRR vs. RG TJ = 125°C; IF = 40A Fig. 20 - Typical Diode QRR VCC= 600V; VGE= 15V;TJ = 125°C Fig. 19- Typical Diode IRR vs. diF/dt VCC= 600V; VGE= 15V; ICE= 40A; TJ = 125°C 10 20 30 40 50 60 70 IF (A) IRR (A) RG = 5.0Ω RG =10 Ω RG =30 Ω RG =50 Ω 0 10 20 30 40 50 60 RG (Ω) IRR (A) 0 200 400 600 800 1000 diF /dt (A/µs) IRR (A) 0 200 400 600 800 1000 1200 diF /dt (A/µs) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Q RR (µC) 5.0Ω 30Ω 10 Ω 50Ω 60A 40A 20A

Bulletin I27126 rev. B 10/02 40MT120UH www.irf.com Fig. 22 - Typical Gate Charge vs. VGE ICE = 5.0A; L = 600µH Fig. 21- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 0 100 200 300 400 500 Q G, Total Gate Charge (nC) VGE (V) 600V 0 20 40 60 80 100 VCE (V) 100 1000 10000 Capacitance (pF) Cies Coes Cres

I27126 rev. C 02/03 10 www.irf.com Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 1E-006 1E-005 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 Thermal Response ( Z thJC 0.20 0.10 D = 0.50 0.01 0.02 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Ri (°C/W) τi (sec) 0.024 0.00008 0.549 0.000098 τJ τJ R1 R2 τ τC Ci i/Ri Ci= τi/Ri 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) 1E-005 0.0001 0.001 0.01 0.1 Thermal Response ( Z thJC 0.20 0.10 D = 0.50 0.01 0.02 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Ri (°C/W) τi (sec) 0.043 0.001214 0.105 0.044929 0.123 1.1977 τJ τJ R1 R2 R2 R3 τ τC Ci= i/Ri Ci= τi/Ri

Bulletin I27126 rev. B 10/02 40MT120UH www.irf.com D C Driver DUT 900V L Rg VCC diode clamp / DUT DUT / DRIVER - 5V VCC DUT L L Rg

80 V DUT

Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit

I27126 rev. C 02/03 12 www.irf.com Outline Table Dimensions in millimetres Note: unused terminals are not assembled in the package Resistance in ohms Electrical Circuit

Bulletin I27126 rev. B 10/02 40MT120UH www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/02 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.

40 MT 120 U H -

Ordering Information Table 1 - Current rating (40 = 40A) 2 - Essential Part Number 3 - Voltage code (120 = 1200V) 4 - Speed/ Type (U = Ultra Fast IGBT) 5 - Circuit Configuration (H = Half Bridge) 6 - Special Option Empty = no special option T = Thermistor