40EPS16PBF

40EPS16PBF IRF | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

IF(AV) Sinusoidal waveform VRRM 1600 V IFSM 475 A VF @ 20A, TJ = 25°C 1.0 TJ - 40 to 150 °C Characteristics Values Units 40 A Major Ratings and Characteristics TO-247AC (Modified) Description/ Features The 40EPS16PbF rectifier SAFE IR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reli- able operation up to 150° C junction temperature. Typical applications are in input rectification and these products are designed to be used with International Rectifier Switches and Output Rectifiers which are available in identical package outlines. Package Outline INPUT RECTIFIER DIODE Lead-Free ("PbF" suffix) Bulletin I2173 10/04 VF < 1V @ 20A IFSM = 475A VRRM = 1600V SAFEIR Series 40EPS16PbF www.irf.com

www.irf.com VRRM , maximum V RSM , maximum non repetitive I RRM peak reverse voltage peak reverse voltage 150°C VV m A 40EPS16PbF 1600 1700 1 TJ Max. Junction Temperature Range - 40 to 150 °C Tstg Max. Storage Temperature Range - 40 to 150 °C RthJC Max. Thermal Resistance Junction 0.6 °C/W DC operation to Case RthJA Max. Thermal Resistance Junction 40 °C/W to Ambient RthCS Typical Thermal Resistance, Case to 0.2 °C/W Mounting surface , smooth and greased Heatsink wt Approximate Weight 6 (0.21) g (oz.) T Mounting Torque Min. 6 (5) Max. 12 (10) Case Style TO-247AC JEDEC (Modified) Marking Device 40EPS16 Thermal-Mechanical Specifications Parameters 40EPS16 Units Conditions Kg-cm (Ibf-in) Voltage Ratings Part Number VFM Max. Forward Voltage Drop 1.14 V @ 40A, T J = 25°C rt Forward slope resistance 7.6 m Ω VF(TO) Threshold voltage 0.72 V IRM Max. Reverse Leakage Current 0.1 T J = 25 °C

1.0 T J = 150 °C

Parameters 40EPS16 Units Conditions TJ = 150°C VR = rated VRRMmA IF(AV) Max. Average Forward Current 40 A @ T C = 105° C, 180° conduction half sine wave IFSM Max. Peak One Cycle Non-Repetitive 400 10ms Sine pulse, rated VRRM applied Surge Current 475 10ms Sine pulse, no voltage reapplied I2t Max. I 2t for fusing 800 10ms Sine pulse, rated V RRM applied 1131 10ms Sine pulse, no voltage reapplied I2√t Max. I 2√t for fusing 11310 A 2√s t = 0.1 to 10ms, no voltage reapplied Absolute Maximum Ratings Parameters 40EPS16 Units Conditions A A2s

www.irf.com Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Fig. 4 - Forward Power Loss CharacteristicsFig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge CurrentFig. 5 - Forward Voltage Drop Characteristics Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) Maximum Allowable Case Temperature (°C) Average Forward Curren t (A) 100 105 110 115 120 125 130 135 140 145 150 0 5 10 15 20 25 30 35 40 45 30˚ 60˚ 90˚ 120˚ 180˚ Conduction Angle 40EPS16 RthJC (DC) = 0.6 K/W Maximum Allowable Case Temperature (°C) Average Forward Curren t (A) Maximum Average Forward Power Loss (W) Average Forward Curren t (A) Maximum Average Forward Power Loss (W) Average Forward Curren t (A) Pulse Train Duration (s) Peak Half Sine Wave Forward Current (A) 100 110 120 130 140 150 0 1 02 03 04 05 06 07 0 DC 30˚ 60˚ 90˚ 120˚ 180˚ Conduction Period 40EPS16 RthJC (DC) = 0.6 K/W 0 5 10 15 20 25 30 35 40 RMS Limit Conduction Angle 180˚ 120˚ 90˚ 60˚ 30˚ 40EPS16 Tj = 150˚C 0 1 02 03 04 05 06 07 0 DC 180˚ 120˚ 90˚ 60˚ 30˚ RMS Limit Conduction Period 40EPS16 Tj = 150˚C 100 1000 0.5 1.5 2.5 Tj = 25˚C Tj = 150˚C 40EPS16 100 150 200 250 300 350 400 450 500 0.01 0.1 1 Maximum Non Repetitive Surge Current 40EPS16 Initial Tj = 150 ˚C No Voltage Reapplied Rated Vrrm Reapplied Versus Pulse Train Duration.

www.irf.com Fig. 7 - Thermal Impedance ZthJC Characteristics Square Wave Pulse Duration (s) Transient Thermal Impedance Z thJC (K/W) 0.01 0.1 0.001 0.01 0.1 1 Steady State Value: (DC Operation) Single Pulse D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 40EPS16 Outline Table Dimensions in millimeters and inches 15.90 (0.626) 15.30 (0.602) 14.20 (0.559) 14.80 (0.583) 3.70 (0.145) 4.30 (0.170) 5.30 ( 0.208) 5.70 (0.225) 5.50 ( 0.217) 4. 50 (0.177) (2 PLCS.) 3.55 (0.139) 3.65 (0.144) 2. 20 (0.087) MA X. 1.00 (0.039) 1.40 (0.056) 0.40 (0.213) 0.80 (0.032) 4.70 ( 0.185) 5.30 (0.209) 1.5 ( 0.059) 2.5 ( 0.098) 2.40 (0.095) MA X. 10.86 (0.427) 10. 94 ( 0.430) 20.30 (0.800) 19.70 (0.775) 1 3 DIA. CATHODE ANODE BASE CATHODE

www.irf.com RECTIFIER INTERNATIONAL ASSEMBLY LOT CODE EXAMPLE: IN ASSEMBLY LINE "H" ASSEMBLED ON WW 35, 2000 THIS IS A 40EPS16 WITH ASSEMBLY LOT CODE 5657 LOGO P = LEAD-FREE YEAR 0 = 2000 PART NUMBER LINE H WEEK 35 P035H 56 57 40EPS16 DATE CODE Marking Information Ordering Information Table

40 E P S 16 PbF

1 - Current Rating (40 = 40A) 2 - Circuit Configuration: E = Single Diode P = TO-247AC (Modified) 4 - Type of Silicon: S = Standard Recovery Rectifier 5 - Voltage rating (16 = 1600V) 6 - y none = Standard Production y PbF = Lead-Free IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/04 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site.