40CTQ045PBF_12 VISHAY | Alldatasheet

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VS-40CTQ045PbF, VS-40CTQ045-N3 www.vishay.com Vishay Semiconductors Revision: 26-Aug-11 1 Document Number: 94212 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Schottky Rectifier, 2 x 20 A

FEATURES

  • 150 °C TJ operation
  • Very low forward voltage drop
  • High frequency operation
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
  • Guard ring for enhanced ruggedness and long term reliability
  • Compliant to RoHS Directive 2002/95/EC
  • Designed and qualified according to JEDEC-JESD47
  • Halogen-free according to IEC 61249-2-21 definition (-N3 only)

DESCRIPTION

This center tap Schottky rect ifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. PRODUCT SUMMARY Package TO-220AB IF(AV) 2 x 20 A VR 45 V VF at IF 0.48 V IRM max. 115 mA at 125 °C TJ max. 150 °C Diode variation Common cathode EAS 20 mJ Anode Base common cathode Common cathode Anode TO-220AB MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I F(AV) Rectangular waveform 40 A VRRM 45 V IFSM tp = 5 μs sine 1240 A VF 20 Apk, TJ = 125 °C (per leg) 0.48 V TJ Range - 55 to 150 °C VOLTAGE RATINGS PARAMETER SYMBOL VS-40CTQ045PbF VS-40CTQ045-N3 UNITS Maximum DC reverse voltage V R 45 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 per leg I F(AV) 50 % duty cycle at TC = 116 °C, rectangular waveform A per device 40 Maximum peak one cycle non-repetitive surge current per leg See fig. 7 I FSM 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated V RRM applied 1240 10 ms sine or 6 ms rect. pulse 350 Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 3 A, L = 4.4 mH 20 mJ Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 3A

VS-40CTQ045PbF, VS-40CTQ045-N3 www.vishay.com Vishay Semiconductors Revision: 26-Aug-11 2 Document Number: 94212 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse width < 300 μs, duty cycle < 2 % ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop per leg See fig. 1 V FM (1) 20 A TJ = 25 °C 0.53 V 40 A 0.68 20 A TJ = 125 °C 0.48 40 A 0.67 Maximum reverse leakage current per leg See fig. 2 I RM (1) TJ = 25 °C VR = Rated VR mA TJ = 125 °C 115 Threshold voltage VF(TO) TJ = TJ maximum 0.27 V Forward slope resistance rt 8.72 m  Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 2800 pF Typical series inductance per leg LS Measured lead to lead 5 mm from package body 8.0 nH Maximum voltage rate of change dV/dt Rated V R 10 000 V/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range T J, TStg - 55 to 150 °C Maximum thermal resistance, junction to case per leg R thJC DC operation 2.0 °C/WMaximum thermal resistance, junction to case per package 1.0 Typical thermal resistance, case to heatsink R thCS Mounting surface, smooth and greased 0.50 Approximate weight 0.07 oz. Mounting torque minimum 6 (5) kgf · cm (lbf · in)maximum 12 (10) Marking device Case style TO-220AB 40CTQ045

VS-40CTQ045PbF, VS-40CTQ045-N3 www.vishay.com Vishay Semiconductors Revision: 26-Aug-11 3 Document Number: 94212 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) 1.80.8 1.2 VFM - Forward Voltage Drop (V) IF - Instantaneous Forward Current (A) 100 1000 TJ = 150 °C TJ = 125 °C TJ = 25 °C 0.1 100 0.01 0.001 VR - Reverse Voltage (V) IR - Reverse Current (mA) 20 30 35 4525 1000 TJ = 150 °C 10 04515 TJ = 125 °C TJ = 100 °C TJ = 75 °C TJ = 50 °C TJ = 25 °C 10 000 03 0 5 0 100 VR - Reverse Voltage (V) CT - Junction Capacitance (pF) 10 40 1000 TJ = 25 °C 0.1 t1 - Rectangular Pulse Duration (s) ZthJC - Thermal Impedance (°C/W) Single pulse (thermal resistance) D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 100 0.01 PDM Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC

VS-40CTQ045PbF, VS-40CTQ045-N3 www.vishay.com Vishay Semiconductors Revision: 26-Aug-11 4 Document Number: 94212 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V 100 03 0 IF(AV) - Average Forward Current (A) Allowable Case Temperature (°C) 110 125 120 150 140 105 115 130 2015105 Square wave (D = 0.50) 80 % rated VR applied See note (1) DC 135 145 02 5 Average Power Loss (W) IF(AV) - Average Forward Current (A) 51 0 1 5 2 0 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC RMS limit 10 000 100 1000 tp - Square Wave Pulse Duration (µs) IFSM - Non-Repetitive Surge Current (A) 100 10 00010 1000 At any rated load condition and with rated V RRM applied following surge Current monitor High-speed switchD.U.T. Rg = 25 Ω + Freewheel diode Vd = 25 V L IRFP460 40HFL40S02

VS-40CTQ045PbF, VS-40CTQ045-N3 www.vishay.com Vishay Semiconductors Revision: 26-Aug-11 5 Document Number: 94212 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ORDERING INFORMATION TABLE ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-40CTQ045PbF 50 1000 Antistatic plastic tube VS-40CTQ045-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95222 Part marking information TO-220AB PbF www.vishay.com/doc?95225 TO-220AB -N3 www.vishay.com/doc?95028 Device code 62 43 5 7

40 C T Q 045 PbFVS-

2 - Current rating (40 = 40 A) - Package: - Circuit configuration: C = Common cathode T = TO-220 - Schottky “Q” series5 - Voltage rating (045 = 45 V)6 1 - Vishay Semiconductors product PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free Environmental digit

Document Number: 95222 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 08-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 TO-220AB Outline Dimensions Vishay Semiconductors DIMENSIONS in millimeters and inches Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not in clude mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and (7) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline D1 8.38 9.02 0.330 0.355  90° to 93° 90° to 93° D2 11.68 12.88 0.460 0.507 6 13 2 D Q 13 2 CC D D 3 x b23 x b (b, b2) b1, b3 (H1) Detail B C A B L Lead tip E Ø P

0.014 ABM M

0.015 A BMM

c AA A Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode Conforms to JEDEC outline TO-220AB (6) (6) (7) (6) (7) e 2 x L1 (2) Detail B Section C - C and D - D View A - A Base metal Plating (4) (4) c1c (6) Thermal pad (E) E1 (6)

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