40CPQ080 SMCDIODE | Alldatasheet

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Circuit Diagram Applications Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR - 80(40CPQ080) 100(40CPQ100) V AverageRectifiedForwardCurrent IF(AV) 50%dutycycle@Tc=145°C, rectangularwaveform 20(PerLeg) A40(PerDevice) PeakOneCycleNon-RepetitiveSurge Current(PerLeg) IFSM 8.3ms,HalfSinepulse,TC =25C 360 A Non-RepetitiveAvalancheEnergy(PerLeg) EAS TJ=25℃,IAS=2A,L=90.mH 11.25 mJ RepetitiveAvalancheCurrent(PerLeg) IAR Current decaying linearly to zero in 1 μ sec Frequency limited by TJ max. VA=1.5×VR typical 0.75 A Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop (PerLeg)* VF1 @20A,Pulse,TJ =25C @40A,Pulse,TJ =25C 0.74 0.80 0.79 0.91 V VF2 @20A,Pulse,TJ =125C @40A,Pulse,TJ =125C 0.56 0.65 0.61 0.75 V ReverseCurrent (PerLeg)* IR1 @VR =ratedVR,TJ =25C 0.0006 1.0 mA IR2 @VR =ratedVR,TJ =125C 0.4 15.0 mA JunctionCapacitance(PerLeg) CT @VR =5V,TC =25C,fSIG =1MHz 800 900 pF VoltageRateofChange dv/dt - - 10,000 V/s  150 C TJ operation  Low forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request  Switching power supply  Converters  Free-Wheeling diodes  Reverse battery protection TO-247AD

Data Sheet N0697, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 40CPQ080 40CPQ100 Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+150 C StorageTemperature Tstg - -55to+150 C TypicalThermalResistanceJunctionto Case RJC DCoperation 1.25(perleg) C/W0.63(perdevice) TypicalThermalResistance,caseto HeatSink Rcs Mountingsurface,smoothand greased 0.24 C/W ApproximateWeight wt - 6.28 g CaseStyle TO-247AD Thermal-Mechanical Specifications: Ratings and Characteristics Curves

Data Sheet N0697, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 40CPQ080 40CPQ100 Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourtapeandreelpackaging specification. Mechanical Dimensions TO-247AD SYMBOL Millimeters MIN. TYP. MAX. A 4.80 5.00 5.20 A1 2.20 2.41 2.61 A2 1.90 2.00 2.10 b 1.10 1.20 1.40 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.50 0.60 0.75 D 20.30 21.00 21.20 D1 16.55 D2 1.20 E 15.45 15.80 16.00 E1 13.30 E2 5.00 E3 2.50 e 5.44 L 19.42 19.92 20.70 L1 4.13 P 3.50 3.60 3.70 P1 7.1 7.40 P2 2.50 Q 5.80 S 6.05 6.15 6.25 T 10.00 U 6.20 Ordering Information: Device Package Shipping 40CPQ080(100) TO-247AD(Pb-Free) 25pcs/tube Tube Specification Marking Diagram WhereXXXXX isYYWWL 40 =Forward Current(40A) C =Configuration PQ =DeviceType 080 =Reverse Voltage(80V) SSG =SSG YY =Year WW =Week L =Lot Number Cautions：Molding resin Epoxy resin UL:94V-0

Data Sheet N0697, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 40CPQ080 40CPQ100 DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdsales departmentforthelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentor anyothercauseduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing)Co.,Ltd assumesnoresponsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation, productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceorany secondarydamageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics (Nanjing)Co.,Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC -SangdestMicroelectronics(Nanjing)Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..