40C_07 MICROSEMI | Alldatasheet

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Technical content

Silicon Controlled Rectifier M Dim. Inches Millimeter ™ ~~ Ss ra - rat > . Minimum Maximum Minimum Maximum Notes (det 8 = B 677 685 17.20 17.40 J D 1.200 1.250 30.48 31.75 | F --N R E427 447 10.84 11.35 Fo 115 155 2.92 3.94 J .200 -300 5.08 7.62 i N 065 085 1.65 2.15 Po 145 155 3.68 3.93 Dia. a = an R 1055 065 1.40 1.65 S$ .025 .030 64 76 Note 1: 1/4-28 UNF-3A Note 2: Full thread within 2 1/2 threads TO-—208AC (TO-65) Microsemi Forward & Reverse Reverse Transient Catalog Number Pepe te egg" Blocking 40c20B 200 300 3 dv/dt-200 V/usec t 40C40B 400 500 mperes surge curren 40C60B 600 700 ® Economical for medium ‘octoos 1000 too power applications 40C120B 1200 1300 ® Compact TO-208AC package To specify dv/dt other than 200V/usec., contact factory.

Electrical Characteristics

Max. RMS on-state current 'T(RMS) 63 Amps Te = 102°C Max. average on-state cur. 'T(AV) 40 Amps Tc = 102°C Max. peak on-state voltage VIM 3.0 Volts 'TM = 500 A(peak) Max. holding current 'y 200 mA ° Max. peak one cycle surge current 'TsM 1000 A TC = 120°C, 60Hz Max. It capability for fusing 2t — 41002S t = 83 ms Thermal and Mechanical Characteristics Operating junction temp range LF -65°C to 125°C Storage temperature range TsTc -65°C to 150°C Maximum thermal resistance Reuc 0.35°C/W Junction to case Typical thermal resistance ‘@CS 0.20°C/W Case to sink Mounting torque 25-30 inch pounds Weight 0.56 ounces (16 grams) typical . LAWRENCE ° 6 Lake Street Lawrence, MA 01841 ICTOSELT)| Pe ozs) ¢20-2600 04-25-07 Rev. 3 FAX: (978) 689-0803 www.microsemi.com

TJ = 25°C unless otherwise indicated Switching Critical rate of rise of on-state current (note 1) di/dt 200A/usec. TJ = 125°C Typical delay time (note 1) td 3.0 usec. Typical circuit commuted turn-off time (note 2) tq 100 usec. Ty = 125°C Note 1: 'TM = 50A, VD = VDRM. GT = 12V open circuit, 20 ohm-0.1 usec. rise time Note 2: ITM = 50A, di/dt = 5A/usec., VR during turn-off interval = 50V min., reapplied dv/dt = 20V/usec., linear to rated YDRM, YGT = OV Triggering Max. gate voltage to trigger Vet 3.0V . Max. nontriggering gate voltage Veo 0.25V Ty = 125°C Max. gate current to trigger ‘oT 100mA Max. peak gate power Pom 10W Average gate power Povav) 1.0W tp = 10 usec. Max. peak gate current ‘cM 3.0A Max. peak gate voltage (forward) Vom 20V Max. peak gate voltage (reverse) Vom 10V Blocking Max. leakage current 'DRM 6mA Ty = 125°C & YDRM Max. reverse leakage 'RRM 6mA Ty = 125°C & VRRM Critical rate of rise of off-state voltage dv/dt 200V/usec. Ty = 125°C 04-25-07 Rev. 3

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B12 16 20 24 28 32 36 001 oO ot 10 10 100 Instantaneous On-State Voltage — Volts Time in Seconds Figure 2 Figure 5 Forward Current Derating Maximum Nonrepetitive Surge Current CTE) PRC on § 125 a E 1000 Fo wee TTT TTT PNET tt 2 120 AS&. 900 — J c gst + NSA El PAT PT TT NN ee ee ee Pot | UONAAL TI 2 oo LL Pe 2 105 ‘I © 600 [~ Soo + HT Ts WI LT Soot LL #4 bot boffeolfieoy | | 8 ol | TIT TT TTI 0 5 10 15 20 25 30 35 40 45 50 1 10 100 Average On-State Current - Amperes Number of Cycles 04-25-07 Rev. 3