40C MICROSEMI | Alldatasheet

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Technical content

M Dim. Inches Millimeter NN — - — - is! (d-t—e8 me 8 677 685 17.20 17.40 J D 1.200 1.250 30.48 31.75 + i. rN R — 427 447 10.84 11.35 FS 155 2.92 3.94 P TP i Ho --- 249 --- 6.32 2 J .200 300 5.08 7.62 N 065 .085 1.65 215 E P 145 155 3.68 3.93 Dio. S025 .030 64 76 Note 1: 1/4-28 UNF-3A Note 2: Full thread within 2 1/2 threads TO-—208AC (10-65) Microsemi Forward & Reverse Reverse Transient Catalog Number Repetitive Blocking Blocking 40¢208 260 300 ; dv/it-200 V/usec ' 40C40B 400 500 mperes surge curren 40C60B 600 700 ® Economical for medium ‘octoos i000 00 power apprications 40C120B 1200 1300 ® Compact TO-208AC package To specify dv/dt other than 200V/usec., contact factory.

Electrical Characteristics

Max. RMS on-state current 'T(RMS) 63 Amps Te = 102°C Max. average on-state cur. 'T(AV) 40 Amps Tc = 102°C Mox. peak on-state voltage VIM 3.0 Volts 'TM = 500 A(peak) Max. holding current 1H 200 mA ° Max. peak one cycle surge current 'TsM 1000 A TC = 120°C, 60Hz Max. I?t capability for fusing I2¢ 4100A2S t = 83 ms Thermal and Mechanical Characteristics Operating junction temp range Ty -65°C to 125°C Storage temperature range TsT¢ 65°C to 150°C Maximum thermal resistance Reuc 0.35°C/W Junction to case Typical thermal resistance Recs 0.20°C/W Case to sink Mounting torque 25-30 inch pounds Weight 0.56 ounces (16 grams) typical 8-31-00 Rev. 2 . COLORADO 800 Hoyt Street Broomfield, CO. 80020 jcrosemi 2" FAX: (303) 466-3775 www.microsemi.com

TJ = 25°C unless otherwise indicated Switching Critical rate of rise of on-state current (note 1) di/dt 200A/usec. TJ = 125°C Typical delay time (note 1) td 3.0 usec. Typical circuit commuted turn-off time (note 2) tq 100 usec. Ty = 126°C Note 1: 'TM = 50A, VD = VORM. GT = 12V open circuit, 20 ohm-0.1 usec. rise time Note 2: TM = 50A, di/dt = 5A/usec., VR during turnoff interval = 50V min., reapplied dv/dt = 20V/usec., linear to rated VDRM, YGT = OV Triggering Max. gate voltage to trigger Vet 3.0V Max. nontriggering gate voltage Veo 0.25V Ty = 125°C Mox. gate current to trigger lor 100mA Max. peak gate power Pom 10W Average gate power Po(av) 1.0W tp = 10 usec. Mox. peak gate current ‘com 3.0A Max. peak gate voltage (forward) Vom 20V Max. peak gate voltage (reverse) Vom 10V Blocking Max. leakage current 'DRM 6mA Ty = 125°C & VORM Max. reverse leakage 'RRM 6mA Ty = 125°C & VRRM Critical rate of rise of off—state voltage dv/dt 200V/usec. Ty = 125°C 8-31-00 Rev. 2

Typical Forward On—State Characteristics Maximum Power Dissipation 100004] qq po] 2 70 oS TTT TT ded a 60 a, oS SC ayy a A A NO OO 5 50 LT Tt TT? tye eye tt ES °| JV 4000 g 30 /) en A MOTT) ge Ae aa 2 AA | | 2 99 4 YY SAA 1000/9 - 0 A map Serr | AT a 2 oF be a GG 7d 0 5 10 15 20 25 30 35 40 45 50 400 [TTT tt yert it i tt | Average On-State Current - Amperes PTT ae Sor tT ACT TTT) ess 2 200 VA Transient Thermal Impedance zoe UIT hase ff 254 = a) < 5 80 O05

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r] 0.4 ers ee 5 } See te I 3 oe VA 5% sz ILLIA z | 82 os Cie yeaa ® 52 oetril [Till LUI Ll [Ill 8B 12 16 20 24 28 32 36 001 a on 10 10 100 Instantaneous On-State Voltage — Volts Time in Seconds Figure 2 Figure 5 Forward Current Derating y Maximum Nonrepetitive Surge Current rel TTTIITI FRCP Td $ 125 a & I Bian ASe tt ica NOT TTT TT TY e ~ NSN ee ee eee 115 £ en NN ee 2 110 N ANAON 700 a PAR RINNNE ee eee ee SCCOMUDPEO i 7 : 5 so | | ttt | | [Tl = 100 © 500 Et LL pf bet boptelfiot |] 8 ol 1 LTTE T TT 3 95 0 60 20 S400 0 5 10 15 20 25 30 35 40 45 50 1 10 100 Average On-State Current - Amperes Number of Cycles 8-31-00 Rev. 2