409DMQ135 SMC | Alldatasheet
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Technical content
Technical Data Green Products Data Sheet N1502, Rev. -
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 /filetalltext (86) 25-87123907 • 409DMQ SERIES 409DMQ135/150 SCHOTTKY RECTIFIER Applications:
- High current switching power supply ● Plating power supply ● Free-Wheeling diodes
- Reverse battery protection ● Converters ● UPS System ● Welding Features:
- Center tap module
- High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
- Low forward voltage drop
- High frequency operation
- Guard ring for enhanced ruggedness and long term reliability
- This is a Pb − Free Device
- All SMC parts are traceable to the wafer lot
- Additional testing can be offered upon request Mechanical Dimensions: In mm/Inches PRM4 (Isolated) MARKING,MOLDING RESIN Marking for 409CMQ135/150, 1 st row SS YYWWL, 2 nd row 409CMQ135/150 Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL:94V-0
Technical Data Green Products Data Sheet N1502, Rev. -
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 /filetalltext (86) 25-87123907 • 409DMQ SERIES Maximum Ratings: Characteristics Symbol Condition Max. Units 135 409CMQ135 Peak Inverse Voltage V RWM - 150 409CMQ150 V 200 per leg Max. Average Forward Current I F(AV) 50% duty cycle @T C =105° C, rectangular wave form 400 per device A Max. Peak One Cycle Non- Repetitive Surge Current (per leg) I FSM 8.3 ms, half Sine pulse 2760 A Electrical Characteristics: Characteristics Symbol Condition Max. Units VF1 @ 200A, Pulse, T J = 25 °C @ 400A, Pulse, T J = 25 °C 1.03 1.21 V Max. Forward Voltage Drop (per leg) * V F2 @ 200A, Pulse, T J = 125 °C @ 400A, Pulse, T J = 125 °C 0.72 0.83 V IR1 @V R = rated V R T J = 25 °C 6 mA Max. Reverse Current (per leg) * I R2 @V R = rated V R T J = 125 °C 85 mA Max. Junction Capacitance (per leg) C T @V R = 5V, T C = 25 °C fSIG = 1MHz 6000 pF Typical Series Inductance (per leg) L S Measured lead to lead 5 mm from package body 5.0 nH Isolation Voltage VISO Tracer to 1500V, measuring whether conducting base plate and the center column 1500 V Max. Voltage Rate of Change dv/dt - 10,000 V/ µs * Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Max. Junction Temperature TJ - -55 to +150 °C Max. Storage Temperature Tstg - -55 to +150 °C Maximum Thermal Resistance Junction to Case (per leg) R θJC DC operation 0.40 °C/W Maximum Thermal Resistance Junction to Case (per package) R θJC DC operation 0.20 °C/W Typical Thermal Resistance, case to Heat Sink R θcs Mounting surface, smooth and greased 0.10 °C/W Mounting Torque 24(min) 35(max) Mounting Torque T M - Terminal Torque 35(min) 46(max) Kg-cm Approximate Weight wt - 79 g Case Style PRM4 Isolated
Technical Data Green Products Data Sheet N1502, Rev. -
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 /filetalltext (86) 25-87123907 • 409DMQ SERIES
Technical Data Green Products Data Sheet N1502, Rev. -
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 /filetalltext (86) 25-87123907 • 409DMQ SERIES DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..