406DMQ200 SMCDIODE | Alldatasheet

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Circuit Diagram Applications Maximum Ratings(limiting values, at 25 °C unless otherwise specified)  175℃ TJ operation  Center tap module  High purity, high temperature epoxy encapsulation for  enhanced mechanical strength and moisture resistance  Low forward voltage drop  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Base plate: Nickel plated; Terminals: Nickel plated  The terminal hardware is supplied with the module.  The mounting hardware is not supplied. Recommended is the use of ¼-20 or M6 screws with spring washer.  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request  High current switching power supply  Plating power supply  Free-Wheeling diodes  Reverse battery protection  Converters  UPS System  Welding PRM4 (Isolated)

Data Sheet N1678, Rev A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 406DMQ200 * Pulsewidth<300µs, dutycycle<2% Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+175 C StorageTemperature Tstg - -55to+175 C TypicalThermalResistanceJunctionto Case(Perleg) RJC DCoperation 0.30 C/W Typical ThermalResistanceJunctionto Case(Perpackage) RJC DCoperation 0.15 C/W TypicalThermalResistance,caseto HeatSink Rcs Mountingsurface,smooth andgreased 0.05 C/W MountingTorque TM - Mounting Torque 3.84(min) 4.80(max) NmTerminal Torque 2.35(min) 3.43(max) ApproximateWeight wt - 110 g CaseStyle PRM4Isolated Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop(PerLeg)* VF1 @200A,Pulse,TJ =25C @400A,Pulse,TJ =25C 0.85 0.96 0.99 1.15 V VF2 @200A,Pulse,TJ =125C @400A,Pulse,TJ =125C 0.75 0.83 0.79 0.92 V ReverseCurrent(PerLeg)* IR1 @VR =ratedVR, TJ =25C 0.0004 10 mA IR2 @VR =ratedVR, TJ =125C 0.3 90 mA JunctionCapacitance(Perleg) CT @VR =5V,TC =25C fSIG =1MHz 3000 5200 pF VoltageRateofChange dv/dt - - 10,000 V/s InsulationVoltage VRMS - - 1000 V Thermal-Mechanical Specifications:

Data Sheet N1678, Rev A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 406DMQ200 Ratings and Characteristics Curves Marking Diagram Ordering Information Device Package Shipping 406DMQ200 PRM4Isolated (Pb-Free) 9pcs/box WhereXXXX is YYWW 406DMQ200 =Part name SS = SS YY = Year WW =Week Cautions：Molding resin Epoxy resinUL:94V-0

Data Sheet N1678, Rev A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 406DMQ200 Mechanical Dimensions PRM4 Isolated(Millimeters/Inches) SYMBOL Millimeters Inches Min. Max. Min. Max. A 78.74 81.28 3.100 3.200 B 37.47 42.55 1.475 1.675 C 6.89 7.69 0.271 0.303 D 19.51 24.59 0.768 0.968 E 33.02 38.10 1.300 1.500 F 17.78 20.32 0.700 0.800 G 60.96 64.77 2.400 2.550 H 17.56 23.55 0.691 0.927 I 90.17 92.71 3.550 3.650 J 3.02 3.68 0.119 0.145 K 15.75 17.50 0.620 0.689 1/4-20 screws (Millimeters)

Data Sheet N1678, Rev A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 406DMQ200 DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..