4069UB

HEF4069UB PHILIPS | Alldatasheet

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Technical content

Product specification File under Integrated Circuits, IC04 January 1995 INTEGRATED CIRCUITS HEF4069UB gates Hex inverter For a complete data sheet, please also download:

• The IC04 LOCMOS HE4000B Logic Family Specifications HEF, HEC
• The IC04 LOCMOS HE4000B Logic Package Outlines/Information HEF, HEC

Philips Semiconductors Product specification Hex inverter HEF4069UB gates

DESCRIPTION

The HEF4069UB is a general purpose hex inverter. Each of the six inverters is a single stage. Fig.1 Functional diagram. HEF4069UBP(N): 14-lead DIL; plastic (SOT27-1) HEF4069UBD(F): 14-lead DIL; ceramic (cerdip) (SOT73) HEF4069UBT(D): 14-lead SO; plastic (SOT108-1) ( ): Package Designator North America Fig.2 Pinning diagram. Fig.3 Schematic diagram (one inverter). FAMILY DATA, IDD LIMITS category GATES See Family Specifications for VIH/VILunbuffered stages

Philips Semiconductors Product specification Hex inverter HEF4069UB gates AC CHARACTERISTICS VSS = 0 V; Tamb =2 5°C; CL = 50 pF; input transition times≤ 20 ns VDD V SYMBOL TYP. MAX. TYPICAL EXTRAPOLATION FORMULA Propagation delays 5 45 90 ns 18 ns + (0,55 ns/pF) CL In → O n 10 t PHL 20 40 ns 9 ns + (0,23 ns/pF) CL HIGH to LOW 15 15 25 ns 7 ns + (0,16 ns/pF) CL 54 0 8 0 n s 1 3 n s + (0,55 ns/pF) CL LOW to HIGH 10 t PLH 20 40 ns 9 ns + (0,23 ns/pF) CL 15 15 30 ns 7 ns + (0,16 ns/pF) CL Output transition times 5 60 120 ns 10 ns + (1,0 ns/pF) CL HIGH to LOW 10 t THL 30 60 ns 9 ns + (0,42 ns/pF) CL 15 20 40 ns 6 ns + (0,28 ns/pF) CL 5 60 120 ns 10 ns + (1,0 ns/pF) CL LOW to HIGH 10 t TLH 30 60 ns 9 ns + (0,42 ns/pF) CL 15 20 40 ns 6 ns + (0,28 ns/pF) CL VDD V TYPICAL FORMULA FOR P ( µW) Dynamic power 5 600 f i+∑ (foC L)× VDD 2 where dissipation per 10 4 000 f i+∑ (foC L)× VDD 2 fi= input freq. (MHz) package (P) 15 22 000 f i+∑ (foC L)× VDD 2 fo = output freq. (MHz) C L = load capacitance (pF) ∑ (foC L) = sum of outputs VDD = supply voltage (V)

Philips Semiconductors Product specification Hex inverter HEF4069UB gates Fig.4 Typical transfer characteristics; ___ VO ; ___I D (drain current); IO = 0; VDD = 5 V. Fig.5 Typical transfer characteristics; ___ VO ; ___I D (drain current); IO = 0; VDD = 10 V. Fig.6 Typical transfer characteristics; ___ VO ; ___I D (drain current); IO = 0; VDD = 15 V.

Philips Semiconductors Product specification Hex inverter HEF4069UB gates

APPLICATION INFORMATION

Some examples of applications for the HEF4069UB are shown below. In Fig.7 an astable relaxation oscillator is given. The oscillation frequency is mainly determined by R1C1, provided R1 << R2 and R2C2 << R1C1. Fig.7 (a) Astable relaxation oscillator using two HEF4069UB inverters; the diodes may be BAW62; C2 is a parasitic capacitance. (b) Waveforms at the points marked A, B, C and D in the circuit diagram. The function of R2 is to minimize the influence of the forward voltage across the protection diodes on the frequency; C2 is a stray (parasitic) capacitance. The period T p is given by Tp =T 1 +T 2, in which VST is the signal threshold level of the inverter. The period is fairly independent of VDD , VST and temperature. The duty factor, however, is influenced by VST . T1 R1C1 In V DD V ST+ V ST 2V DD V ST– (a) (b)

Philips Semiconductors Product specification Hex inverter HEF4069UB gates Fig.8 Crystal oscillator for frequencies up to 10 MHz, using two HEF4069UB inverters. (1) This inverter is added to amplify the oscillator output voltage to a level sufficient to drive other LOCMOS circuits. Fig.9 Voltage gain (VO /VI) as a function of supply voltage. Fig.10 Supply current as a function of supply voltage. Fig.11 Test set-up for measuring graphs of Figs 9 and 10. It is also an example of an analogue amplifier using one HEF4069UB.

Philips Semiconductors Product specification Hex inverter HEF4069UB gates Fig.12 Test set-up for measuring forward transconductance gfs =d io/dviat vo is constant (see also graph Fig.13). Fig.13 Typical forward transconductance gfsas a function of the supply voltage at Tamb =2 5°C. A : average, B : average + 2 s, C : average− 2 s, where: ‘s’ is the observed standard deviation.