4066

CD4066BM NSC | Alldatasheet

Document overview

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Technical content

Features

Y Wide supply voltage range 3V to 15V Y High noise immunity 0.45 V DD (typ.) Y Wide range of digital and g7.5 V PEAK analog switching Y ‘‘ON’’ resistance for 15V operation 80 X Y Matched ‘‘ON’’ resistance DRONe5X (typ.) over 15V signal input Y ‘‘ON’’ resistance flat over peak-to-peak signal range Y High ‘‘ON’’/‘‘OFF’’ 65 dB (typ.) output voltage ratio @ fise10 kHz, R Le10 k X Y High degree linearity 0.1% distortion (typ.) High degree linearity @ fise1 kHz, V ise5Vp-p, High degree linearity V DDbVSSe10V, R Le10 k X Y Extremely low ‘‘OFF’’ 0.1 nA (typ.) switch leakage @ VDDbVSSe10V, T Ae25§C Y Extremely high control input impedance 10 12X(typ.) Y Low crosstalk b50 dB (typ.) between switches @ fise0.9 MHz, R Le1k X Y Frequency response, switch ‘‘ON’’ 40 MHz (typ.)

Applications

Y Analog signal switching/multiplexing # Signal gating # Squelch control # Chopper # Modulator/Demodulator # Commutating switch Y Digital signal switching/multiplexing Y CMOS logic implementation Y Analog-to-digital/digital-to-analog conversion Y Digital control of frequency, impedance, phase, and an- alog-signal-gain Schematic and Connection Diagrams TL/F/5665–1 Dual-In-Line Package Top View Order Number CD4066B C1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.

Absolute Maximum Ratings (Notes1&2 ) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Supply Voltage (V DD) b0.5V to a18V Input Voltage (V IN) b0.5V to V DDa0.5V Storage Temperature Range (T S) b65§Ct o a150§C Power Dissipation (P D) Dual-In-Line 700 mW Small Outline 500 mW Lead Temperature (T (Soldering, 10 seconds) 300 §C Recommended Operating Conditions (Note 2) Supply Voltage (V DD) 3 Vt o1 5 V Input Voltage (V IN) 0 Vt oV DD Operating Temperature Range (T A) CD4066BM b55§Ct o a125§C CD4066BC b40§Ct o a85§C Symbol Parameter Conditions b55§C a25§C a125§C Units Min Max Min Typ Max Min Max IDD Quiescent Device Current V DDe5V 0.25 0.01 0.25 7.5 mA VDDe10V 0.5 0.01 0.5 15 mA VDDe15V 1.0 0.01 1.0 30 mA SIGNAL INPUTS AND OUTPUTS RON ‘‘ON’’ Resistance R Le10 k X to VDDbVSS VCeVDD,V ISeVSS to V DD VDDe5V 800 270 1050 1300 X VDDe10V 310 120 400 550 X VDDe15V 200 80 240 320 X DRON D‘‘ON’’ Resistance R Le10 k X to VDDbVSS Between any 2 of V CeVDD,V ISeVSS to V DD

4 Switches V DDe10V 10 X

IIS Input or Output Leakage V Ce0 g50 g0.1 g50 g500 nA Switch ‘‘OFF’’ V ISe15V and 0V, VOSe0V and 15V CONTROL INPUTS VILC Low Level Input Voltage V ISeVSS and V DD VOSeVDD and V SS IISeg10 mA VDDe5V 1.5 2.25 1.5 1.5 V VDDe10V 3.0 4.5 3.0 3.0 V VDDe15V 4.0 6.75 4.0 4.0 V VIHC High Level Input Voltage V DDe5V 3.5 3.5 2.75 3.5 V VDDe10V (see note 6) 7.0 7.0 5.5 7.0 V VDDe15V 11.0 11.0 8.25 11.0 V IIN Input Current V DDbVSSe15V g0.1 g10b5 g0.1 g1.0 mA VDDtVIStVSS VDDtVCtVSS Symbol Parameter Conditions b40§C a25§C a85§C Units Min Max Min Typ Max Min Max IDD Quiescent Device Current V DDe5V 1.0 0.01 1.0 7.5 mA VDDe10V 2.0 0.01 2.0 15 mA VDDe15V 4.0 0.01 4.0 30 mA

Symbol Parameter Conditions b40§C a25§C a85§C Units Min Max Min Typ Max Min Max SIGNAL INPUTS AND OUTPUTS RON ‘‘ON’’ Resistance R Le10 k X to VDDbVSS VCeVDD,V SS to V DD VDDe5V 850 270 1050 1200 X VDDe10V 330 120 400 520 X VDDe15V 210 80 240 300 X DRON D‘‘ON’’ Resistance R Le10 k X to VDDbVSS Between Any 2 of V CCeVDD,V ISeVSS to V DD IIS Input or Output Leakage V Ce0 g50 g0.1 g50 g200 nA Switch ‘‘OFF’’ CONTROL INPUTS VILC Low Level Input Voltage V ISeVSS and V DD VOSeVDD and V SS IISeg10mA VDDe5V 1.5 2.25 1.5 1.5 V VDDe10V 3.0 4.5 3.0 3.0 V VDDe15V 4.0 6.75 4.0 4.0 V VIHC High Level Input Voltage V DDe5V 3.5 3.5 2.75 3.5 V VDDe10V (See note 6) 7.0 7.0 5.5 7.0 V VDDe15V 11.0 11.0 8.25 11.0 V IIN Input Current V DDbVSSe15V g0.3 g10b5 g0.3 g1.0 mA VDDtVIStVSS VDDtVCtVSS Symbol Parameter Conditions Min Typ Max Units tPHL,t PLH Propagation Delay Time Signal V CeVDD,C Le50 pF, ( Figure 1 ) Input to Signal Output R Le200k VDDe5V 25 55 ns VDDe10V 15 35 ns VDDe15V 10 25 ns tPZH,t PZL Propagation Delay Time R Le1.0 k X,C Le50 pF, ( Figures 2 and 3 ) Control Input to Signal V DDe5V 125 ns Output High Impedance to V DDe10V 60 ns Logical Level V DDe15V 50 ns tPHZ,t PLZ Propagation Delay Time R Le1.0 k X,C Le50 pF, ( Figures 2 and 3 ) Control Input to Signal V DDe5V 125 ns Output Logical Level to V DDe10V 60 ns High Impedance V DDe15V 50 ns Sine Wave Distortion V CeVDDe5V, V SSeb5V 0.1 % RLe10 k X,V ISe5Vp-p,f e1 kHz, (Figure 4 ) Frequency Response-Switch V CeVDDe5V, V SSeb5V, 40 MHz ‘‘ON’’ (Frequency at b3 dB) R Le1k X,V ISe5Vp-p,

20 Log 10 VOS/VOS (1 kHz) bdB,

(Figure 4 )

Typical Performance Characteristics ‘‘ON’’ Resistance vs Signal Voltage for T Ae25§C ‘‘ON’’ Resistance as a Function of Temperature for V DDbVSSe15V ‘‘ON’’ Resistance as a Function of Temperature for V DDbVSSe10V ‘‘ON’’ Resistance as a Function of Temperature for V DDbVSSe5V TL/F/5665–4 Special Considerations In applications where separate power sources are used to drive V DD and the signal input, the V DD current capability should exceed V DD/RL (RLeeffective external load of the 4 CD4066BM/CD4066BC bilateral switches). This provision avoids any permanent current flow or clamp action of the V DD supply when power is applied or removed from CD4066BM/CD4066BC. In certain applications, the external load-resistor current may include both V DD and signal-line components. To avoid drawing V DD current when switch current flows into termi- nals 1, 4, 8 or 11, the voltage drop across the bidirectional switch must not exceed 0.6V at T As25§C, or 0.4V at TAl25§C (calculated from R ON values shown). No V DD current will flow through R L if the switch current flows into terminals 2, 3, 9 or 10.

Physical Dimensions inches (millimeters) Cerdip (J) Order Number CD4066BMJ or CD4066BCJ S.O. Package (M) Order Number CD4066BCM

CD4066BM/CD4066BC Quad Bilateral Switch Physical Dimensions inches (millimeters) (Continued) Dual-In-Line Package (N) Order Number CD4066BMN or CD4066BCN LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd. Japan Ltd.

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