CEP4060AL CET | Alldatasheet
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Technical content
ja | N-Channel Enhancement Mode Field Effect Transistor
FEATURES
e 60V, 15A , Roscon=80MQ @Ves=10V. D Rosion=85MQ @Ves=5.0V. © Super high dense cell design for extremely low Ros(on). e High power and current handling capability. ¢ TO-220 & TO-263 package. G D , (0) Wa > es G¢ QF S CEB SERIES CEP SERIES T0-263(DD-PAK) T0-220 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) (—reener |i [teu Foarsssovwe | ws | ow (| vt Drain Current-Continuous Poe | os fa | Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25°C. Derate above 26°C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 4-32
| | CEP4060AL/CEB4060AL ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) pear yl cnn [un] i parswedeiamiup [es | veanoana Tw [ | [VI |Zero Gate Votage Drain Curent | loss _| Vos=60v,Ves=ov | |__| 25 [ pa | susie Ls | snot | | onl enmcsatatnn [fan | WES PRL Pisses | Ps fo [a] JOnSiateDrainCurent _—_—| tow | Vos=Sv,Vos=10v [15 | | [a | |ForvardTransconductance =| Srs_| Vos=t0V,b=75a | |u| |s | feces fe] SS" Tate Voo = 30, | [ss | a | os | beth Tw am [ToilGateChage sss | | [6 [a7 | nc | JGateDrain Chae | Os | [2] fre 4-33 | |
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Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
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Figure 9. Gate Charge Figure 10. Maximum Safe