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HEXFET® Power MOSFET Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. S D G Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.45 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance VDSS = 40V RDS(on) = 0.004Ω ID = 202A/G134 /G108Advanced Process Technology /G108Ultra Low On-Resistance /G108Dynamic dv/dt Rating /G108175°C Operating Temperature /G108Fast Switching /G108Fully Avalanche Rated /G108Lead-Free

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www.irf.com 1 TO-220AB Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, V GS @ 10V 202 /G134 ID @ TC = 100°C Continuous Drain Current, V GS @ 10V 143 /G134 A IDM Pulsed Drain Current/G32/G129 808 PD @TC = 25°C Power Dissipation 333 W Linear Derating Factor 2.2 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy/G130 620 mJ IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy/G135 mJ dv/dt Peak Diode Recovery dv/dt /G131 1.5 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range -55 to + 175 Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) PD-94968B

/G73/G82/G70/G49/G52/G48/G52/G80/G98/G70 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V V GS = 0V, ID = 250μA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.039 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 0.0035 0.004 Ω VGS = 10V, ID = 121A /G132 VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS = VGS, ID = 250μA gfs Forward Transconductance 76 ––– ––– S V DS = 25V, ID = 121A ––– ––– 20 μA VDS = 40V, VGS = 0V ––– ––– 250 V DS = 32V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 200 V GS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V Qg Total Gate Charge ––– 131 196 I D = 121A Qgs Gate-to-Source Charge ––– 36 ––– nC V DS = 32V Qgd Gate-to-Drain ("Miller") Charge ––– 37 56 V GS = 10V/G132 td(on) Turn-On Delay Time ––– 17 ––– V DD = 20V tr Rise Time ––– 190 ––– I D = 121A td(off) Turn-Off Delay Time ––– 46 ––– R G = 2.5Ω tf Fall Time ––– 33 ––– R D = 0.2Ω /G132 Between lead,––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 5669 ––– V GS = 0V Coss Output Capacitance ––– 1659 ––– pF V DS = 25V Crss Reverse Transfer Capacitance ––– 223 ––– ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 6205 ––– V GS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 1467 ––– V GS = 0V, VDS = 32V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance /G133 ––– 2249 ––– V GS = 0V, VDS = 0V to 32V nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current /G129/G32Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) /G131ISD ≤ 121A, di/dt ≤ 130A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C /G78/G111/G116/G101/G115/G58 /G130 /G32Starting TJ = 25°C, L = 85μH RG = 25Ω, IAS = 121A. (See Figure 12) /G132 Pulse width ≤ 400μs; duty cycle ≤ 2%. S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) /G129 ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V T J = 25°C, IS = 121A, VGS = 0V/G32/G132 trr Reverse Recovery Time ––– 78 117 ns T J = 25°C, IF = 121A Qrr Reverse RecoveryCharge ––– 163 245 nC di/dt = 100A/ μs/G32/G132 ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 202/G134 808 /G65 /G133 Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS /G134/G32Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.

/G73/G82/G70/G49/G52/G48/G52/G80/G98/G70 www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 100 1000 0.1 1 10 100 20μs PULSE WIDTH T = 25 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 100 1000 0.1 1 10 100 20μs PULSE WIDTH T = 175 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 100 1000 4 5 6 7 8 9 10 11 12 V = 25V 20μs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , Drain-to-Source Current (A) GS D T = 25 CJ ° T = 175 CJ ° -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 T , Junction Temperature( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V = I = GS D 10V 202A

/G73/G82/G70/G49/G52/G48/G52/G80/G98/G70 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 0 50 100 150 200 Q , Total Gate Charge (nC) V , Gate-to-Source Voltage (V) G GS FOR TEST CIRCUIT SEE FIGURE I =D 121A V = 20VDS V = 32VDS 0.1 100 1000 V ,Source-to-Drain Voltage (V) I , Reverse Drain Current (A) SD SD V = 0 V GS T = 25 CJ ° T = 175 CJ ° 100 1000 10000 1 10 100 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 175 C = 25 C° C V , Drain-to-Source Voltage (V) I , Drain Current (A)I , Drain Current (A) DS D 10us 100us 1ms 10ms 1 10 100 VDS, Drain-to-Source Voltage (V) 2000 4000 6000 8000 10000 C, Capacitance(pF) Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd

/G73/G82/G70/G49/G52/G48/G52/G80/G98/G70 www.irf.com 5 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms /G86/G68/G83 /G80/G117/G108/G115/G101/G32/G87/G105/G100/G116/G104/G32≤ 1 /G181/G115 /G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32≤ 0.1 % /G82/G68 /G86/G71/G83 /G82/G71 /G68/G46/G85/G46/G84/G46 /G49/G48/G86 -/G86/G68/G68 25 50 75 100 125 150 175 100 120 140 160 180 200 220 T , Case Temperature( C) I , Drain Current (A) D LIMITED BY PACKAGE 0.001 0.01 0.1 Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE)

/G73/G82/G70/G49/G52/G48/G52/G80/G98/G70 6 www.irf.com Fig 12c. Maximum Avalanche Energy Vs. Drain Current QG QGS QGD VG Charge D.U.T. VDS IDIG 3mA VGS .3μF 50KΩ .2μF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors /G49/G48/G32/G86 Fig 13b. Gate Charge Test Circuit Fig 13a. Basic Gate Charge Waveform Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS RG IAS 0.01Ωtp D.U.T LVDS - VDD DRIVER A 15V 20V Fig 14. Threshold Voltage Vs. Temperature -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) 1.0 2.0 3.0 4.0 -VGS(th) Gate threshold Voltage (V) ID = -250μA 25 50 75 100 125 150 175 300 600 900 1200 1500 Starting T , Junction Temperature( C) E , Single Pulse Avalanche Energy (mJ) J AS ID TOP BOTTOM 49A 101A 121A

/G73/G82/G70/G49/G52/G48/G52/G80/G98/G70 www.irf.com 7 Fig 15. Typical Avalanche Current Vs.Pulsewidth Fig 16. Maximum Avalanche Energy Vs. Temperature Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = t av ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) =/G32/G68T/ ZthJC Iav = 2/G68T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) 100 150 200 250 300 350 400 EAR , Avalanche Energy (m TOP Single Pulse BOTTOM 10% Duty Cycle ID = 121A tav (sec) 100 1000 Avalanche Current (A) 0.05 Duty Cycle = Single Pulse 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Δ Tj = 25°C due to avalanche losses 0.01

/G73/G82/G70/G49/G52/G48/G52/G80/G98/G70 8 www.irf.com P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W . Period Fig 17. For N-channel HEXFET® Power MOSFETs /G42/G32/G86/G71/G83/G32/G61/G32/G53/G86/G32/G102/G111/G114/G32/G76/G111/G103/G105/G99/G32/G76/G101/G118/G101/G108/G32/G68/G101/G118/G105/G99/G101/G115 /G80/G101/G97/G107/G32/G68/G105/G111/G100/G101/G32/G82/G101/G99/G111/G118/G101/G114/G121/G32/G100/G118/G47/G100/G116/G32/G84/G101/G115/G116/G32/G67/G105/G114/G99/G117/G105/G116 /G131 /G132/G130 /G82/G71 /G86/G68/G68

  • /G100/G118/G47/G100/G116/G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G82/G71
  • /G68/G114/G105/G118/G101/G114/G32/G115/G97/G109/G101/G32/G116/G121/G112/G101/G32/G97/G115/G32/G68/G46/G85/G46/G84/G46
  • /G73/G83/G68/G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32/G34/G68/G34
  • /G68/G46/G85/G46/G84/G46/G32/G45/G32/G68/G101/G118/G105/G99/G101/G32/G85/G110/G100/G101/G114/G32/G84/G101/G115/G116 /G68/G46/G85/G46/G84 /G67/G105/G114/G99/G117/G105/G116/G32/G76/G97/G121/G111/G117/G116/G32/G67/G111/G110/G115/G105/G100/G101/G114/G97/G116/G105/G111/G110/G115
  • /G32/G76/G111/G119/G32/G83/G116/G114/G97/G121/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32 • /G71/G114/G111/G117/G110/G100/G32/G80/G108/G97/G110/G101 /G32/G32 • /G76/G111/G119/G32/G76/G101/G97/G107/G97/G103/G101/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32/G32/G32/G32/G32/G67/G117/G114/G114/G101/G110/G116/G32/G84/G114/G97/G110/G115/G102/G111/G114/G109/G101/G114 /G129 /G42

/G73/G82/G70/G49/G52/G48/G52/G80/G98/G70 www.irf.com 9 IR WORLD HEADQUARTERS: 101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information .04/2012 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. /G84/G79/G45/G50/G50/G48/G32/G112/G97/G99/G107/G97/G103/G101/G32/G105/G115/G32/G110/G111/G116/G32/G114/G101/G99/G111/G109/G109/G101/G110/G100/G101/G100/G32/G102/G111/G114/G32/G83/G117/G114/G102/G97/G99/G101/G32/G77/G111/G117/G110/G116/G32/G65/G112/G112/G108/G105/G99/G97/G116/G105/G111/G110/G46 /G84/G79/G45/G50/G50/G48/G65/G66/G32/G80/G97/G99/G107/G97/G103/G101/G32/G79/G117/G116/G108/G105/G110/G101 /G68/G105/G109/G101/G110/G115/G105/G111/G110/G115/G32/G97/G114/G101/G32/G115/G104/G111/G119/G110/G32/G105/G110/G32/G109/G105/G108/G108/G105/G109/G101/G116/G101/G114/G115/G32/G40/G105/G110/G99/G104/G101/G115/G41 /G84/G79/G45/G50/G50/G48/G65/G66/G32/G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 INTERNATIO NA L PA RT NUM BER REC TIFIER LOT CO DE AS S E MB L Y LOG O YEAR 0 = 2000 DAT E CODE WEEK 19 LIN E C LOT CODE 1789 EXAMPLE: THIS IS AN IRF1010 Note: "P" in a ssembly line position indi cates "Lead - F r ee" IN THE ASSEMBLY LINE "C " ASS EMBLED ON WW 19, 2000 Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/