403DMQ SMC | Alldatasheet

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Technical content

Data Sheet N1676 Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 403DMQ SERIES 403DMQ080/100 SCHOTTKY RECTIFIER Applications:
  • High current switching power supply ● Plating power supply ● Free-Wheeling diodes
  • Reverse battery protection ● Converters ● UPS System ● Welding Features:
  • 175 ℃ TJ operation
  • Center tap module
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
  • Low forward voltage drop
  • High frequency operation
  • Guard ring for enhanced ruggedness and long term reliability
  • Product contain Pb
  • All SMC parts are traceable to the wafer lot
  • Additional testing can be offered upon request Mechanical Dimensions: In mm/Inches Please Note: Suffix “R” Denotes For Reversed Polarity PRM4 (Isolated) MARKING,MOLDING RESIN Marking for 403DMQ080/100, 1 st row SS YYWWL, 2 nd row 403DMQ080/100 Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL:94V-0

Data Sheet N1676 Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 403DMQ SERIES Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Inverse Voltage V RWM - 80 403DMQ080 V 100 403DMQ100 Average Forward Current I F(AV) 50% duty cycle @T C =85°C, rectangular wave form 200 per leg A 400 per device Peak One Cycle Non- Repetitive Surge Current (per leg) I FSM 8.3 ms, half Sine pulse 3960 A Non-Repetitive Avalanche Energy(peg leg) E AS TJ=25℃,IAS=1A,L=30mH 15 mJ Repetitive Avalanche Current(peg leg) IAR Current decaying linearly to zero in 1 μsec Frequency limited by TJ max. VA=1.5×VR typical 1 A Electrical Characteristics: Characteristics Symbol Condition Max. Units Forward Voltage Drop (per leg) * VF1 @ 200A, Pulse, TJ = 25 °C @ 400A, Pulse, TJ = 25 °C 0.83 0.97 V VF2 @ 200A, Pulse, TJ = 125 °C @ 400A, Pulse, TJ = 125 °C 0.69 0.82 V Reverse Current (per leg) * IR1 @VR = rated VR TJ = 25 °C 6 mA IR2 @VR = rated VR TJ = 125 °C 140 mA Junction Capacitance (per leg) CT @VR = 5V, TC = 25 °C fSIG = 1MHz 5500 pF Typical Series Inductance (per leg) LS Measured lead to lead 5 mm from package body 5.0 nH Max. Voltage Rate of Change dv/dt - 10,000 V/μs * Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Junction Temperature TJ - -55 to +175 °C Storage Temperature Tstg - -55 to +175 °C Maximum Thermal Resistance Junction to Case (per leg) R θJC DC operation 0.40 °C/W Maximum Thermal Resistance Junction to Case (per package) RθJC DC operation 0.20 °C/W Typical Thermal Resistance, case to Heat Sink Rθcs Mounting surface, smooth and greased 0.10 °C/W Mounting Torque T M - Mounting Torque 24(min) 35(max) Kg-cmTerminal Torque 35(min) 46(max) Approximate Weight wt - 79 g Case Style PRM4 Isolated

Data Sheet N1676 Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 403DMQ SERIES

Data Sheet N1676 Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 403DMQ SERIES DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..