CD4030BMS INTERSIL | Alldatasheet

Document overview

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  • PDF pages: 7

Technical content

Features

  • High Voltage Type (20V Rating)
  • Medium-Speed Operation - tPHL, tPLH = 65ns (typ) at VDD = 10V, CL = 50pF
  • 100% Tested for Quiescent Current at 20V
  • Standardized Symmetrical Output Characteristics
  • 5V, 10V and 15V Parametric Ratings
  • Maximum Input Current Of 1µA at 18V Over Full Package-Temperature Range; - 100nA at 18V and +25 oC
  • Noise Margin (Over Full Package Temperature Range): - 1V at VDD = 5V - 2V at VDD = 10V - 2.5V at VDD = 15V
  • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices”

Applications

  • Even and Odd-Parity Generators and Checkers
  • Logical Comparators
  • Adders/Subtractors
  • General Logic Functions

Description

The CD4030BMS types consist of four independent Exclu- sive-OR gates. The CD4030BMS provides the system designer with a means for direct implementation of the Exclusive-OR function. The CD4030BMS is supplied in these 14-lead outline pack- ages: Braze Seal DIP H4H Frit Seal DIP H1B Ceramic Flatpack H3W December 1992 File Number 3305

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

  1. Go/No Go test with limits applied to inputs.
  2. For accuracy, voltage is measured differentially to VDD. Limit

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

  1. All voltages referenced to device GND.
  2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized

on initial design release and upon design changes which would affect these characteristics. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS NOTES: 1. All voltages referenced to device GND.

  1. See Table 2 for +25oC limit.

TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25 O C TABLE 6. APPLICABLE SUBGROUPS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

FIGURE 1. 1 OF 4 IDENTICAL GATES NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS

  1. Each pin except VDD and GND will have a series resistor of 10K± 5%, VDD = 18V± 0.5V
  2. Each pin except VDD and GND will have a series resistor of 47K± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD

TABLE 6. APPLICABLE SUBGROUPS (Continued)

FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT FIGURE 3. MINIMUM OUTPUT LOW (SINK) CURRENT FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT FIGURE 6. TYPICAL TRANSITION TIME AS A FUNCTION OF FIGURE 7. TYPICAL PROPAGATION DELAY TIME AS A

200 SUPPLY VOLTAGE (VDD) = 5V