3RS101M ZSELEC | Alldatasheet
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STD-202, Method 208 Weight: 1.7 grams (approx.) P o l a r i t y : A s M a r k e d o n B o d y I d e a l f o r P r i n t e d C i r c u i t B o a r d s H i g h S u r g e C u r r e n t C a p a b i l i t y L o w F o r w a r d V o l t a g e D r o p C a s e : M o l d e d P l a s t i c 3.0 A BRIDGE RECTIFIER Feat ures ! Diff used Junction ! High Current Capability ! High Reliability M echanical Data Terminals: Plated Leads Solderable per ! Mounting Position: Any ! Marking: Type Number M aximum Ra tings and Electrical Characteristics @T A=2 5°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRW M VR 100 200 400 600 800 1000 V RMS Reverse Voltage VR( RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current ( N o t e 1 ) @ TA = 50°C IO 3. 0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFS M 80 A Forward Voltage (per element) @IF = 2.0A V FM V P e ak R e v e r s e C u r r e n t @ TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 500 µA Typical Thermal Resistance (Note 3) R /G01JA 30 K/W Operating and S torage Temperature Range Tj, TST G -55 to +150 °C Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case. 3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad 1 of 2 ! Le ad Free: For RoHS / Lead Free Version Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Dimensions in inches and (milimeters) RS-1M 0.1 44(3.65)0.0 43(1.1)0.58 1(14.75) 0.561(14.25) 0.4 02(10.2) 0.4 17(10.6) 0.08 7(2.2) 0.07 1(1.8) 0.5 63(14.3) 0.583(14. 0.056 (1.42) 0.048(1.22) 0.1 6(4.06) 0.14(3.56) 0.0 34(0.86) 0.022(0 .55) 0.012(0.3) 0.03(0.76) 3RS101M – 3RS107M 3RS101M – 3RS107M 3RS 101M 3RS 102M 3RS 103M 3RS 104M 3RS 105M 3RS 106M 3RS 107M 2.0
0.1 1.0 I , INST ANTANEOUS FWD CURRENT (A) F V , INSTANTANEOUS FWD VOLTAGE (V) Fig. 2 T ypical Fwd Characteristics F T = 150°CJ T = 25°CJ P ulse Width = 300 µs 100 1 10 100 I , P EAK FWD SURGE CURRENT (A) FSM N UM BER OF CYCLES AT 60 Hz Fig.
3 M ax Non-Repetitive P eak Fwd Surge
T = 150°c Single Half Sine Wave (JEDEC Method) j 100 11 0 1 00 C , JUNCTION CAP ACITANCE (pF) j V , REVERSE VOLT AGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C f= 1MHz j 0.01 0.1 1.0 100 1000 10,000 20 40 60 80 100 120 140 I , INST ANT ANEOUS REVERSE CURRENT (mA) R PERCENT OF RA TED PEAK REVERSE VOLTAGE (%) Fig. 5 T ypicalReverse Characteristics T = 125°Cj T = 100°Cj T = 25°Cj T = 150°Cj 1.0 2.0 3.0 0 75 150 225 I , A VERAGE RECTIFIED CURRENT (A) O T , TEMPERATURE (°C) Fig.
1 ForwardCurrent Derating Curve
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 3RS101M – 3RS107M 3RS101M – 3RS107M