39NAB12T7V1 SEMIKRON | Alldatasheet
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© by SEMIKRON Rev. 2.0 31.01.2022 1 MiniSKiiP® 3 NAB Converter-Inverter-Brake (CIB) SKiiP 39NAB12T7V1 Features* 1200V Generation 7 IGBTs (T7) Robust and soft switching freewheeling diodes in CAL technology New SKR PEP diode technology for enhanced power and environmental robustness Highly reliable spring contacts for electrical connections UL recognized: File no. E63532 Remarks Max. case temperature limited to TC=TS=125 °C Product reliability results valid for Tj≤150 °C; Tj,op >150°C during overload (Details see AN19-002) MiniSKiiP ″Technical Explanations″ and ″Mounting Instructions″ are part of the data sheet. Please refer to both documents for further information. For storage and case temperature with TIM see document ″Technical Explanations Thermal Interface Materials″ Inverter IGBT: T1 T6 Chopper IGBT: T14 Inverse Diode: D1 D6 Freewheeling Diode: D13 Rectifier Diode: D7 D12 All graphs are referring to inverter/ rectifier part Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES Tj = 25 °C 1200 V IC λpaste=0.8 W/(mK) Tj = 175 °C Ts = 70 °C 135 A Ts = 100 °C 108 A IC λpaste=2.5 W/(mK) Tj = 175 °C Ts = 70 °C 169 A Ts = 100 °C 137 A ICnom 150 A ICRM 300 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C 7 µs Tj -40 ... 175 °C Chopper - IGBT VCES Tj = 25 °C 1200 V IC λpaste=0.8 W/(mK) Tj = 175 °C Ts = 70 °C 120 A Ts = 100 °C 98 A IC λpaste=2.5 W/(mK) Tj = 175 °C Ts = 70 °C 143 A Ts = 100 °C 116 A ICnom 100 A ICRM 200 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C 7 µs Tj -40 ... 175 °C Inverse - Diode VRRM Tj = 25 °C 1200 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts = 70 °C 88 A Ts = 100 °C 69 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts = 70 °C 106 A Ts = 100 °C 85 A IFRM 300 A IFSM tp = 10 ms, sin 180°, Tj = 150 °C 760 A Tj -40 ... 175 °C Freewheeling - Diode VRRM Tj = 25 °C 1200 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts = 70 °C 80 A Ts = 100 °C 64 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts = 70 °C 94 A Ts = 100 °C 75 A IFRM 200 A IFSM tp = 10 ms, sin 180°, Tj = 150 °C 550 A Tj -40 ... 175 °C
2 Rev. 2.0 31.01.2022 © by SEMIKRON MiniSKiiP® 3 NAB Converter-Inverter-Brake (CIB) SKiiP 39NAB12T7V1 Features* 1200V Generation 7 IGBTs (T7) Robust and soft switching freewheeling diodes in CAL technology New SKR PEP diode technology for enhanced power and environmental robustness Highly reliable spring contacts for electrical connections UL recognized: File no. E63532 Remarks Max. case temperature limited to TC=TS=125 °C Product reliability results valid for Tj≤150 °C; Tj,op >150°C during overload (Details see AN19-002) MiniSKiiP ″Technical Explanations″ and ″Mounting Instructions″ are part of the data sheet. Please refer to both documents for further information. For storage and case temperature with TIM see document ″Technical Explanations Thermal Interface Materials″ Inverter IGBT: T1 T6 Chopper IGBT: T14 Inverse Diode: D1 D6 Freewheeling Diode: D13 Rectifier Diode: D7 D12 All graphs are referring to inverter/ rectifier part Absolute Maximum Ratings Symbol Conditions Values Unit Rectifier - Diode VRRM Tj = 25 °C 1600 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts = 70 °C 144 A Ts = 100 °C 112 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts = 70 °C 159 A Ts = 100 °C 125 A IFSM tp = 10 ms sin 180° Tj = 25 °C 1000 A Tj = 150 °C 890 A i2t tp = 10 ms sin 180° Tj = 25 °C 5000 A 2s Tj = 150 °C 3960 A 2s Tj -40 ... 175 °C Module It(RMS) Tterminal = 80 °C, 20 A per spring 80 A Tstg module without TIM -40 ... 125 °C Visol AC sinus 50 Hz, 1 min 2500 V Characteristics Symbol Conditions min. typ. max. Unit Inverter - IGBT VCE(sat) IC = 150 A VGE = 15 V chiplevel Tj = 25 °C 1.55 1.70 V Tj = 150 °C 1.73 1.88 V Tj = 175 °C 1.77 1.92 V VCE0 chiplevel Tj = 25 °C 1.00 1.05 V Tj = 150 °C 0.80 0.85 V Tj = 175 °C 0.75 0.80 V rCE VGE = 15 V chiplevel Tj = 25 °C 3.7 4.3 m Ω Tj = 150 °C 6.2 6.9 m Ω Tj = 175 °C 6.8 7.5 m Ω VGE(th) VGE = VCE, IC = 3.5 mA 5.15 5.8 6.45 V ICES VGE = 0 V, V CE = 1200 V, Tj = 25 °C 1.5 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 30.00 nF Coes f = 1 MHz 0.39 nF Cres f = 1 MHz 0.10 nF QG VGE = - 8V ... + 15 V 2100 nC RGint Tj = 25 °C 1.0 Ω td(on) VCC = 600 V IC = 150 A RG on = 1.1 Ω RG off = 1.1 Ω VGE = +15/-15 V @ Tj = 150 °C: di/dton = 3970 A/µs di/dtoff = 1530 A/µs dv/dt = 3730 V/µs Tj = 25 °C 170 ns Tj = 150 °C 181 ns Tj = 175 °C 183 ns tr Tj = 25 °C 34 ns Tj = 150 °C 39 ns Tj = 175 °C 40 ns Eon Tj = 25 °C 4.6 mJ Tj = 150 °C 9.9 mJ Tj = 175 °C 12 mJ
© by SEMIKRON Rev. 2.0 31.01.2022 3 MiniSKiiP® 3 NAB Converter-Inverter-Brake (CIB) SKiiP 39NAB12T7V1 Features* 1200V Generation 7 IGBTs (T7) Robust and soft switching freewheeling diodes in CAL technology New SKR PEP diode technology for enhanced power and environmental robustness Highly reliable spring contacts for electrical connections UL recognized: File no. E63532 Remarks Max. case temperature limited to TC=TS=125 °C Product reliability results valid for Tj≤150 °C; Tj,op >150°C during overload (Details see AN19-002) MiniSKiiP ″Technical Explanations″ and ″Mounting Instructions″ are part of the data sheet. Please refer to both documents for further information. For storage and case temperature with TIM see document ″Technical Explanations Thermal Interface Materials″ Inverter IGBT: T1 T6 Chopper IGBT: T14 Inverse Diode: D1 D6 Freewheeling Diode: D13 Rectifier Diode: D7 D12 All graphs are referring to inverter/ rectifier part Characteristics Symbol Conditions min. typ. max. Unit Inverter - IGBT td(off) VCC = 600 V IC = 150 A RG on = 1.1 Ω RG off = 1.1 Ω VGE = +15/-15 V @ Tj = 150 °C: di/dton = 3970 A/µs di/dtoff = 1530 A/µs dv/dt = 3730 V/µs Tj = 25 °C 274 ns Tj = 150 °C 370 ns Tj = 175 °C 389 ns tf Tj = 25 °C 65 ns Tj = 150 °C 100 ns Tj = 175 °C 106 ns Eoff Tj = 25 °C 11 mJ Tj = 150 °C 18.7 mJ Tj = 175 °C 21 mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 0.43 K/W Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 0.3 K/W Chopper - IGBT VCE(sat) IC = 100 A VGE = 15 V chiplevel Tj = 25 °C 1.50 1.70 V Tj = 150 °C 1.68 1.88 V Tj = 175 °C 1.77 1.92 V VCE0 chiplevel Tj = 25 °C 1.00 1.05 V Tj = 150 °C 0.80 0.85 V Tj = 175 °C 0.75 0.80 V rCE VGE = 15 V chiplevel Tj = 25 °C 5.0 6.5 m Ω Tj = 150 °C 8.8 10 m Ω Tj = 175 °C 10 11 m Ω VGE(th) VGE = VCE, IC = 2.5 mA 5.15 5.8 6.45 V ICES VGE = 0 V, V CE = 1200 V, Tj = 25 °C 1 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 21.70 nF Coes f = 1 MHz 0.28 nF Cres f = 1 MHz 0.08 nF QG VGE = - 8V ... + 15 V 1400 nC RGint Tj = 25 °C 1.5 Ω td(on) VCC = 600 V IC = 100 A RG on = 1.7 Ω RG off = 1.7 Ω VGE = +15/-15 V @ Tj = 150 °C: di/dton = 2620 A/µs di/dtoff = 1030 A/µs dv/dt = 3680 V/µs Tj = 25 °C 162 ns Tj = 150 °C 171 ns Tj = 175 °C 173 ns tr Tj = 25 °C 31 ns Tj = 150 °C 38 ns Tj = 175 °C 38 ns Eon Tj = 25 °C 5 mJ Tj = 150 °C 9.3 mJ Tj = 175 °C 11 mJ td(off) Tj = 25 °C 256 ns Tj = 150 °C 350 ns Tj = 175 °C 368 ns tf Tj = 25 °C 57 ns Tj = 150 °C 89 ns Tj = 175 °C 100 ns Eoff Tj = 25 °C 6.6 mJ Tj = 150 °C 12 mJ Tj = 175 °C 13 mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 0.41 K/W Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 0.31 K/W
4 Rev. 2.0 31.01.2022 © by SEMIKRON MiniSKiiP® 3 NAB Converter-Inverter-Brake (CIB) SKiiP 39NAB12T7V1 Features* 1200V Generation 7 IGBTs (T7) Robust and soft switching freewheeling diodes in CAL technology New SKR PEP diode technology for enhanced power and environmental robustness Highly reliable spring contacts for electrical connections UL recognized: File no. E63532 Remarks Max. case temperature limited to TC=TS=125 °C Product reliability results valid for Tj≤150 °C; Tj,op >150°C during overload (Details see AN19-002) MiniSKiiP ″Technical Explanations″ and ″Mounting Instructions″ are part of the data sheet. Please refer to both documents for further information. For storage and case temperature with TIM see document ″Technical Explanations Thermal Interface Materials″ Inverter IGBT: T1 T6 Chopper IGBT: T14 Inverse Diode: D1 D6 Freewheeling Diode: D13 Rectifier Diode: D7 D12 All graphs are referring to inverter/ rectifier part Characteristics Symbol Conditions min. typ. max. Unit Inverse - Diode VF = VEC IF = 150 A VGE = 0 V chiplevel Tj = 25 °C 2.28 2.63 V Tj = 150 °C 2.28 2.61 V Tj = 175 °C 2.12 2.46 V VF0 chiplevel Tj = 25 °C 1.30 1.50 V Tj = 150 °C 0.90 1.10 V Tj = 175 °C 0.82 0.98 V rF chiplevel Tj = 25 °C 6.6 7.5 m Ω Tj = 150 °C 9.2 10 m Ω Tj = 175 °C 8.6 9.8 m Ω IRRM VCC = 600 V IF = 150 A VGE = -15 V @ Tj = 150 °C: di/dtoff = 3910 A/µs Tj = 25 °C 193 A Tj = 150 °C 241 A Tj = 175 °C 255 A Qrr Tj = 25 °C 9 µC Tj = 150 °C 23 µC Tj = 175 °C 28 µC Err Tj = 25 °C 4.8 mJ Tj = 150 °C 12 mJ Tj = 175 °C 14 mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 0.65 K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) 0.49 K/W Freewheeling - Diode VF = VEC IF = 100 A VGE = 0 V chiplevel Tj = 25 °C 2.20 2.52 V Tj = 150 °C 2.15 2.47 V Tj = 175 °C 2.00 2.31 V VF0 chiplevel Tj = 25 °C 1.30 1.50 V Tj = 150 °C 0.90 1.10 V Tj = 175 °C 0.82 0.98 V rF chiplevel Tj = 25 °C 9.0 10 m Ω Tj = 150 °C 13 14 m Ω Tj = 175 °C 12 13 m Ω IRRM VCC = 600 V IF = 100 A VGE = -15 V @ Tj = 150 °C: di/dtoff = 2590 A/µs Tj = 25 °C 93 A Tj = 150 °C 116 A Tj = 175 °C 120 A Qrr Tj = 25 °C 5.9 µC Tj = 150 °C 15 µC Tj = 175 °C 19 µC Err Tj = 25 °C 2.2 mJ Tj = 150 °C 5.9 mJ Tj = 175 °C 7.3 mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 0.65 K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) 0.51 K/W
© by SEMIKRON Rev. 2.0 31.01.2022 5 MiniSKiiP® 3 NAB Converter-Inverter-Brake (CIB) SKiiP 39NAB12T7V1 Features* 1200V Generation 7 IGBTs (T7) Robust and soft switching freewheeling diodes in CAL technology New SKR PEP diode technology for enhanced power and environmental robustness Highly reliable spring contacts for electrical connections UL recognized: File no. E63532 Remarks Max. case temperature limited to TC=TS=125 °C Product reliability results valid for Tj≤150 °C; Tj,op >150°C during overload (Details see AN19-002) MiniSKiiP ″Technical Explanations″ and ″Mounting Instructions″ are part of the data sheet. Please refer to both documents for further information. For storage and case temperature with TIM see document ″Technical Explanations Thermal Interface Materials″ Inverter IGBT: T1 T6 Chopper IGBT: T14 Inverse Diode: D1 D6 Freewheeling Diode: D13 Rectifier Diode: D7 D12 All graphs are referring to inverter/ rectifier part Characteristics Symbol Conditions min. typ. max. Unit Rectifier - Diode VF IF = 44 A chiplevel Tj = 25 °C 0.97 1.20 V Tj = 150 °C 0.84 1.07 V Tj = 175 °C 0.82 1.05 V VF0 chiplevel Tj = 25 °C 0.89 1.09 V Tj = 150 °C 0.73 0.92 V Tj = 175 °C 0.69 0.88 V rF chiplevel Tj = 25 °C 1.84 2.5 m Ω Tj = 150 °C 2.6 3.5 m Ω Tj = 175 °C 2.9 3.9 m Ω IR Tj = 150 °C, VRRM 1.7 mA Rth(j-s) per Diode, λpaste=0.8 W/(mK) 0.51 K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) 0.44 K/W Module Ms to heat sink 2 2.5 Nm w 82 g LCE - nH Temperature Sensor R100 Tr=100°C (R25=1000Ω) 1670 ± 3% Ω R(T) R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2] B = 1.731*10-5°C-2
6 Rev. 2.0 31.01.2022 © by SEMIKRON Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 2.0 31.01.2022 7 Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward characteristic Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. input bridge forward characteristic
8 Rev. 2.0 31.01.2022 © by SEMIKRON Pinout
© by SEMIKRON Rev. 2.0 31.01.2022 9 This is an electrostatic discharge sensitive device (ESDS) due to international standard IEC 61340. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make changes. Pinout