39MLI07E3V1

39MLI07E3V1 SEMIKRON | Alldatasheet

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© by SEMIKRON Rev. 1.0 – 29.09.2021 1 MiniSKiiP® 3 MLI 3-Level NPC IGBT-Module SKiiP 39MLI07E3V1 Features* • 650V Trench IGBTs • Robust and soft diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 • NTC T-Sensor Typical Applications • Uninterruptible power supplies (UPS) • Solar inverters Remarks* • Case temperature limited to T C=125°C max.; TC=TS (valid for baseplate-less modules) • Product reliability results are valid for Tjop=150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 Footnotes 1) Please find further technical information on the SEMIKRON website. Absolute Maximum Ratings Symbol Conditions Values Unit IGBT1 VCES Tj = 25 °C 650 V IC λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 159 A Ts = 70 °C 126 A IC λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 208 A Ts = 70 °C 165 A ICnom 200 A ICRM 600 A VGES -20 ... 20 V tpsc VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 650 V 6 µs Tj -40 ... 175 °C IGBT2 VCES Tj = 25 °C 650 V IC λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 159 A Ts = 70 °C 126 A IC λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 208 A Ts = 70 °C 165 A ICnom 200 A ICRM 600 A VGES -20 ... 20 V tpsc VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 650 V 6 µs Tj -40 ... 175 °C Diode1 VRRM Tj = 25 °C 650 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 163 A Ts = 70 °C 125 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 200 A Ts = 70 °C 155 A IFRM 400 A IFSM 10 ms, sin 180°, Tj = 25 °C 1470 A Tj -40 ... 175 °C Diode2 VRRM Tj = 25 °C 650 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 163 A Ts = 70 °C 125 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 200 A Ts = 70 °C 155 A IFRM 400 A IFSM 10 ms, sin 180°, Tj = 25 °C 1470 A Tj -40 ... 175 °C

2 Rev. 1.0 – 29.09.2021 © by SEMIKRON MiniSKiiP® 3 MLI 3-Level NPC IGBT-Module SKiiP 39MLI07E3V1 Features* • 650V Trench IGBTs • Robust and soft diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 • NTC T-Sensor Typical Applications • Uninterruptible power supplies (UPS) • Solar inverters Remarks* • Case temperature limited to T C=125°C max.; TC=TS (valid for baseplate-less modules) • Product reliability results are valid for Tjop=150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 Footnotes 1) Please find further technical information on the SEMIKRON website. Absolute Maximum Ratings Symbol Conditions Values Unit Diode5 VRRM Tj = 25 °C 650 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 163 A Ts = 70 °C 125 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 200 A Ts = 70 °C 155 A IFRM 400 A IFSM 10 ms, sin 180°, Tj = 25 °C 1470 A Tj -40 ... 175 °C Module It(RMS) Tterminal = 80°C, 20A per spring 200 A Tstg module without TIM -40 ... 125 °C Visol AC sinus 50 Hz, t = 1 min 2500 V Characteristics Symbol Conditions min. typ. max. Unit IGBT1 VCE(sat) IC = 200 A VGE = 15 V chiplevel Tj = 25 °C 1.45 1.90 V Tj = 150 °C 1.70 2.10 V VCE0 chiplevel Tj = 25 °C 0.90 1.00 V Tj = 150 °C 0.82 0.90 V rCE VGE = 15 V chiplevel Tj = 25 °C 2.8 4.5 m Ω Tj = 150 °C 4.4 6.0 m Ω VGE(th) VGE = VCE, IC = 3.2 mA 5.1 5.8 6.4 V ICES VGE = 0 V, V CE = 650 V, Tj = 25 °C 2.0 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 12.34 nF Coes f = 1 MHz 0.77 nF Cres f = 1 MHz 0.37 nF QG VGE = - 8 V...+ 15 V 1600 nC RGint Tj = 25 °C 2.0 Ω td(on) VCE = 300 V IC = 200 A VGE = +15/-15 V RG on = 2 Ω RG off = 2 Ω di/dton = 3150 A/µs di/dtoff = 2000 A/µs Tj = 150 °C 165 ns tr Tj = 150 °C 69 ns Eon Tj = 150 °C 3.6 mJ td(off) Tj = 150 °C 341 ns tf Tj = 150 °C 83 ns Eoff Tj = 150 °C 8.9 mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 0.5 K/W Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 0.33 K/W

© by SEMIKRON Rev. 1.0 – 29.09.2021 3 MiniSKiiP® 3 MLI 3-Level NPC IGBT-Module SKiiP 39MLI07E3V1 Features* • 650V Trench IGBTs • Robust and soft diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 • NTC T-Sensor Typical Applications • Uninterruptible power supplies (UPS) • Solar inverters Remarks* • Case temperature limited to T C=125°C max.; TC=TS (valid for baseplate-less modules) • Product reliability results are valid for Tjop=150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 Footnotes 1) Please find further technical information on the SEMIKRON website. Characteristics Symbol Conditions min. typ. max. Unit IGBT2 VCE(sat) IC = 200 A VGE = 15 V chiplevel Tj = 25 °C 1.45 1.90 V Tj = 150 °C 1.70 2.10 V VCE0 chiplevel Tj = 25 °C 0.90 1.00 V Tj = 150 °C 0.82 0.90 V rCE VGE = 15 V chiplevel Tj = 25 °C 2.8 4.5 m Ω Tj = 150 °C 4.4 6.0 m Ω VGE(th) VGE = VCE, IC = 3.2 mA 5.1 5.8 6.4 V ICES VGE = 0 V, V CE = 650 V, Tj = 25 °C 2.0 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 12.34 nF Coes f = 1 MHz 0.77 nF Cres f = 1 MHz 0.37 nF QG VGE = - 8 V...+ 15 V 1600 nC RGint Tj = 25 °C 2.0 Ω td(on) VCC = 300 V IC = 200 A VGE = +15/-15 V RG on = 2 Ω RG off = 2 Ω di/dton = 3120 A/µs di/dtoff = 2000 A/µs Tj = 150 °C 152 ns tr Tj = 150 °C 70 ns Eon Tj = 150 °C 1.8 mJ td(off) Tj = 150 °C 324 ns tf Tj = 150 °C 89 ns Eoff Tj = 150 °C 9.5 mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 0.5 K/W Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 0.33 K/W Diode1 VF = VEC IF = 200 A VGE = 0 V chiplevel Tj = 25 °C 1.39 1.75 V Tj = 150 °C 1.38 1.76 V VF0 chiplevel Tj = 25 °C 1.04 1.24 V Tj = 150 °C 0.85 0.99 V rF chiplevel Tj = 25 °C 1.76 2.6 m Ω Tj = 150 °C 2.6 3.9 m Ω IRRM IF = 200 A di/dtoff = 2700 A/µs VR = 300 V VGE = +15/-15 V Tj = 150 °C 157 A Qrr Tj = 150 °C 31 µC Err Tj = 150 °C 8.3 mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 0.6 K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) 0.45 K/W Diode2 VF = VEC IF = 200 A VGE = 0 V chiplevel Tj = 25 °C 1.39 1.75 V Tj = 150 °C 1.38 1.76 V VF0 chiplevel Tj = 25 °C 1.04 1.24 V Tj = 150 °C 0.85 0.99 V rF chiplevel Tj = 25 °C 1.76 2.6 m Ω Tj = 150 °C 2.6 3.9 m Ω IRRM IF = 200 A di/dtoff = 3100 A/µs VR = 300 V VGE = +15/-15 V Tj = 150 °C 171 A Qrr Tj = 150 °C 31 µC Err 1) Tj = 150 °C 8.3 mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 0.6 K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) 0.45 K/W

4 Rev. 1.0 – 29.09.2021 © by SEMIKRON MiniSKiiP® 3 MLI 3-Level NPC IGBT-Module SKiiP 39MLI07E3V1 Features* • 650V Trench IGBTs • Robust and soft diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 • NTC T-Sensor Typical Applications • Uninterruptible power supplies (UPS) • Solar inverters Remarks* • Case temperature limited to T C=125°C max.; TC=TS (valid for baseplate-less modules) • Product reliability results are valid for Tjop=150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 Footnotes 1) Please find further technical information on the SEMIKRON website. Characteristics Symbol Conditions min. typ. max. Unit Diode5 VF = VEC IF = 200 A chiplevel Tj = 25 °C 1.39 1.75 V Tj = 150 °C 1.38 1.76 V VF0 chiplevel Tj = 25 °C 1.04 1.24 V Tj = 150 °C 0.85 0.99 V rF chiplevel Tj = 25 °C 1.76 2.6 m Ω Tj = 150 °C 2.6 3.9 m Ω IRRM IF = 200 A VR = 300 V VGE = +15/-15 V t.b.d. A Qrr 16 µC Err 4 mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 0.6 K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) 0.45 K/W Module LsCE1 - nH LsCE2 - nH RCC'+EE' Ts = 25 °C - m Ω Ts = 125 °C - m Ω Ms to heat sink 2 2.5 Nm Mt - Nm - Nm w 82 g Temperature Sensor R100 Tc=100°C (R25=5 kΩ) 1) 493 Ω ±2% K

© by SEMIKRON Rev. 1.0 – 29.09.2021 5 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TS) Fig. 3: Typ. IGBT1 & Diode5 turn-on /-off energy = f (IC) Fig. 4: Typ. IGBT1 & Diode5 turn-on /-off energy = f(RG) Fig. 5: Typ. IGBT1 transfer characteristic Fig. 6: Typ. IGBT1 gate charge characteristic

6 Rev. 1.0 – 29.09.2021 © by SEMIKRON Fig. 9: Typ. transient thermal impedance of IGBT1 & Diode5 Fig. 10: Typ. Diode5 forward characteristic, incl. RCC'+ EE' Fig. 11: Typ. Diode5 peak reverse recovery current Fig. 12: Typ. Diode5 recovery charge

© by SEMIKRON Rev. 1.0 – 29.09.2021 7 Pinout and Dimensions Pinout

8 Rev. 1.0 – 29.09.2021 © by SEMIKRON This is an electrostatic discharge sensitive device (ESDS) due to international standard IEC 61340. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make changes.