LM285-1.2_16 TI1 | Alldatasheet
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Sample & Buy T echnical Documents Tools & Software Support & Community SLVS075J –APRIL 1989–REVISED JANUARY 2015 LMx85-1.2,LM385B-1.2MicropowerVoltageReferences
1 Features 3 Description
These micropower, two-terminal, band-gap voltage 1• Operating Current Range references operate over a 10-μA to 20-mA current– LM285-1.2: 10 μA to 20 mA range and feature exceptionally low dynamic – LM385-1.2: 15 μA to 20 mA impedance and good temperature stability. On-chip trimming provides tight voltage tolerance. The band-– LM385B-1.2: 15 μA to 20 mA gap reference for these devices has low noise and• 1% and 2% Initial Voltage Tolerance long-term stability.
- Reference Impedance The design makes these devices exceptionally– LM385-1.2: 1 Ω MAX at 25°C tolerant of capacitive loading and, thus, easier to use – All devices: 1.5 Ω MAX over Full in most reference applications. The wide dynamic Temperature Range operating temperature range accommodates varying current supplies, with excellent regulation.• Very Low Power Consumption
- Interchangeable with Industry Standard The extremely low power drain of this series makes them useful for micropower circuitry. These voltageLM285-1.2 and LM385-1.2 references can be used to make portable meters, regulators, or general-purpose analog circuitry, with2 Applications battery life approaching shelf life. The wide operating
- Portable Meter References current range allows them to replace older references with tighter-tolerance parts.• Portable Test Instruments
- Battery-Operated Systems Device Information(1)
- Current-Loop Instrumentation PART NUMBER PACKAGE (PIN) BODY SIZE (NOM)
- Panel Meters SOIC (8) 4.90 mm × 3.91 mm SOP (8) 6.20 mm × 5.30 mm LMx85-1.2 TSSOP (8) 3.00 mm × 4.40 mm TO-226 (3) 4.30 mm × 4.30 mm (1) For all available packages, see the orderable addendum at the end of the datasheet.
4 Simplified Schematic
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.
SLVS075J –APRIL 1989–REVISED JANUARY 2015 www.ti.com Table of Contents
5 Revision History
Changes from Revision I (December 2005) to Revision J Page
- Added Applications, Device Information table, Pin Functions table, ESD Ratings table, Thermal Information table, Typical Characteristics, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
2 Submit Documentation Feedback Copyright © 1989–2015, Texas Instruments Incorporated
Product Folder Links: LM285-1.2 LM385-1.2 LM385B-1.2
www.ti.com SLVS075J –APRIL 1989–REVISED JANUARY 2015
6 Pin Configuration and Functions
NAME LP D, PS or PW ANODE 1 4 I Shunt Current/Voltage input CATHODE 2 8 O Common pin, normally connected to ground NC 3 1, 2, 3, 5, 6, 7 — No internal connection Copyright © 1989–2015, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LM285-1.2 LM385-1.2 LM385B-1.2
SLVS075J –APRIL 1989–REVISED JANUARY 2015 www.ti.com
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1) MIN MAX UNIT IR Reverse Current 30 mA IF Forward Current 10 mA TJ Operating virtual junction temperature 150 °C Tstg Storage temeprature –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V(ESD) Electrostatic discharge VCharged device model (CDM), per JEDEC specification JESD22-C101, ±1000all pins(2) (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT IZZ Reference current 0.01 20 mA LM285-1.2 –40 85 TA Operating free-air temperature °C LM385-1.2, LM385B-1.2 0 70
7.4 Thermal Information
LMx85-1.2 THERMAL METRIC(1) D LP PS PW UNIT
8 PINS 3 PINS 8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 97 140 95 149 °C/W (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
4 Submit Documentation Feedback Copyright © 1989–2015, Texas Instruments Incorporated
Product Folder Links: LM285-1.2 LM385-1.2 LM385B-1.2
7.5 Electrical Characteristics
7.6 Typical Characteristics
Figure 1. Reverse Current vs Reverse Voltage Figure 2. Reference Voltage Change vs Reverse Current
Figure 4. Reference Voltage vs Free-Air TemperatureFigure 3. Forward Voltage vs Forward Current Figure 6. Noise Voltage vs FrequencyFigure 5. Reference Impedance vs Reference Current Figure 7. Output Noise Voltage vs Cutoff Frequency
6 Submit Documentation Feedback Copyright © 1989–2015, Texas Instruments Incorporated
www.ti.com SLVS075J –APRIL 1989–REVISED JANUARY 2015
8 Detailed Description
8.1 Overview
The LM285-1.2, LM385-1.2, and LM385-1.2 devices are micropower, two-terminal, band-gap voltage references which operate over a 10-μA to 20-mA current range. On-chip trimming provides tight voltage tolerance. The band-gap reference for these devices has low noise and long-term stability. The design makes these devices exceptionally tolerant of capacitive loading and, thus, easier to use in most reference applications. The wide dynamic operating temperature range accommodates varying current supplies, with excellent regulation. The extremely low power drain of this series makes them useful for micropower circuitry. These voltage references can be used to make portable meters, regulators, or general-purpose analog circuitry, with battery life approaching shelf life.
8.2 Functional Block Diagram
A. Component values shown are nominal.
8.3 Feature Description
A band gap voltage reference controls high gain amplifier and shunt pass element to maintain a nearly constant voltage between cathode and anode. Regulation occurs after a minimum current is provided to power the voltage divider and amplifier. Internal frequency compensation provides a stable loop for all capacitor loads. Floating shunt design is useful for both positive and negative regulation applications.
8.4 Device Functional Modes
LM285-1.2, LM385-1.2, and LM385-1.2 devices will operate in one mode, which is as a fixed voltage reference that cannot be adjusted. In order for a proper Reverse Voltage to be developed, current must be sourced into the cathode of LM285. The minimum current needed for proper regulation is denoted in Electrical Characteristics as IZ,min. Copyright © 1989–2015, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Links: LM285-1.2 LM385-1.2 LM385B-1.2
9 Application and Implementation
validate and test their design implementation to confirm system functionality.
9.1 Application Information
how to use these devices to establish a voltage reference.
9.2 Typical Application
Figure 8. Generating Reference Voltage with a Resistive Current Source
9.2.1 Design Requirements
minimum Cathode Current (IZ), as indicated in Electrical Characteristics.
9.2.2 Detailed Design Procedure
simple resistor. For a resistor, its value should be equal to or greater than (Vsupply - Vreference) ÷ IZ(MIN) .
8 Submit Documentation Feedback Copyright © 1989–2015, Texas Instruments Incorporated
9.2.3 Application Curves
Figure 9. Transient Response
9.3 System Examples
9.3.1 Thermocouple Cold-Junction Compensator
Figure 10. Thermocouple Cold-Junction Compensator
9.3.2 Generating Reference Voltage with a Constant Current Source
Figure 11. Generating Reference Voltage with a Constant Current Source Device
10 Submit Documentation Feedback Copyright © 1989–2015, Texas Instruments Incorporated
10 Power Supply Recommendations
In order to not exceed the maximum cathode current, be sure that the supply voltage is current limited. adjusting the width of the traces to have the proper current density.
11 Layout
11.1 Layout Guidelines
- Connect a low-ESR, 0.1-μF (CL) ceramic bypass capacitor on the cathode pin node.
- Decouple other active devices in the system per the device specifications.
- Using a solid ground plane helps distribute heat and reduces electromagnetic interference (EMI) noise pickup.
- Place the external components as close to the device as possible. This configuration prevents parasitic errors (such as the Seebeck effect) from occurring.
- Do not run sensitive analog traces in parallel with digital traces. Avoid crossing digital and analog traces if possible and only make perpendicular crossings when absolutely necessary.
11.2 Layout Example
Figure 12. Layout Diagram
12 Device and Documentation Support
12.1 Related Links
resources, tools and software, and quick access to sample or buy. Table 1. Related Links
12.2 Trademarks
All trademarks are the property of their respective owners.
12.3 Electrostatic Discharge Caution
during storage or handling to prevent electrostatic damage to the MOS gates.
12.4 Glossary
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
12 Submit Documentation Feedback Copyright © 1989–2015, Texas Instruments Incorporated
www.ti.com 27-Jul-2016 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples LM285D-1-2 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 285-12 LM285DE4-1-2 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 285-12 LM285DG4-1-2 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 285-12 LM285DR-1-2 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 285-12 LM285DRE4-1-2 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 285-12 LM285DRG4-1-2 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 285-12 LM285LP-1-2 ACTIVE TO-92 LP 3 1000 Pb-Free (RoHS) CU SN N / A for Pkg Type -40 to 85 285-12 LM285LPE3-1-2 ACTIVE TO-92 LP 3 1000 Pb-Free (RoHS) CU SN N / A for Pkg Type -40 to 85 285-12 LM285LPRE3-1-2 ACTIVE TO-92 LP 3 2000 Pb-Free (RoHS) CU SN N / A for Pkg Type -40 to 85 285-12 LM385-1.2-MWC ACTIVE WAFERSALE YS 0 1 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -40 to 85 LM385BD-1-2 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 385B12 LM385BDE4-1-2 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 385B12 LM385BDG4-1-2 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 385B12 LM385BDR-1-2 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 385B12 LM385BDRG4-1-2 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 385B12 LM385BLP-1-2 ACTIVE TO-92 LP 3 1000 Pb-Free (RoHS) CU SN N / A for Pkg Type 0 to 70 385B12 LM385BLPE3-1-2 ACTIVE TO-92 LP 3 1000 Pb-Free (RoHS) CU SN N / A for Pkg Type 0 to 70 385B12
www.ti.com 27-Jul-2016 Addendum-Page 2 Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples LM385BLPR-1-2 ACTIVE TO-92 LP 3 2000 Pb-Free (RoHS) CU SN N / A for Pkg Type 0 to 70 385B12 LM385BLPRE3-1-2 ACTIVE TO-92 LP 3 2000 Pb-Free (RoHS) CU SN N / A for Pkg Type 0 to 70 385B12 LM385BPW-1-2 ACTIVE TSSOP PW 8 150 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 385B12 LM385BPWR-1-2 ACTIVE TSSOP PW 8 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 385B12 LM385D-1-2 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 385-12 LM385DG4-1-2 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 385-12 LM385DR-1-2 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 385-12 LM385DRG4-1-2 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 385-12 LM385LP-1-2 ACTIVE TO-92 LP 3 1000 Pb-Free (RoHS) CU SN N / A for Pkg Type 0 to 70 385-12 LM385LPE3-1-2 ACTIVE TO-92 LP 3 1000 Pb-Free (RoHS) CU SN N / A for Pkg Type 0 to 70 385-12 LM385LPR-1-2 ACTIVE TO-92 LP 3 2000 Pb-Free (RoHS) CU SN N / A for Pkg Type 0 to 70 385-12 LM385LPRE3-1-2 ACTIVE TO-92 LP 3 2000 Pb-Free (RoHS) CU SN N / A for Pkg Type 0 to 70 385-12 LM385PW-1-2 ACTIVE TSSOP PW 8 150 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 385-12 LM385PWE4-1-2 ACTIVE TSSOP PW 8 150 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 385-12 LM385PWR-1-2 ACTIVE TSSOP PW 8 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 385-12 LM385PWRE4-1-2 ACTIVE TSSOP PW 8 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 385-12 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
www.ti.com 27-Jul-2016 Addendum-Page 3 PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 15-Feb-2016 Pack Materials-Page 1
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM285DR-1-2 SOIC D 8 2500 340.5 338.1 20.6 LM385BDR-1-2 SOIC D 8 2500 340.5 338.1 20.6 LM385BPWR-1-2 TSSOP PW 8 2000 367.0 367.0 35.0 LM385DR-1-2 SOIC D 8 2500 340.5 338.1 20.6 LM385PWR-1-2 TSSOP PW 8 2000 367.0 367.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 15-Feb-2016 Pack Materials-Page 2
www.ti.com PACKAGE OUTLINE C TYP6.6 6.2
1.2 MAX
6X 0.65 8X 0.30 0.19 1.95 0.15 0.05 (0.15) TYP 0 - 8 0.25 GAGE PLANE 0.75 0.50 A NOTE 3 3.1 2.9 B NOTE 4 4.5 4.3 4221848/A 02/2015 TSSOP - 1.2 mm max heightPW0008A SMALL OUTLINE PACKAGE NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed 0.15 mm per side. 4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side. 5. Reference JEDEC registration MO-153, variation AA. 1 8
0.1 C A B
0.1 C SEE DETAIL A DETAIL A TYPICAL SCALE 2.800
www.ti.com EXAMPLE BOARD LAYOUT (5.8)
0.05 MAX
0.05 MIN
8X (1.5) 8X (0.45) 6X (0.65) (R ) TYP 0.05 4221848/A 02/2015 TSSOP - 1.2 mm max heightPW0008A SMALL OUTLINE PACKAGE SYMM SYMM LAND PATTERN EXAMPLE SCALE:10X 4 5 NOTES: (continued) 6. Publication IPC-7351 may have alternate designs. 7. Solder mask tolerances between and around signal pads can vary based on board fabrication site. METALSOLDER MASK OPENING NON SOLDER MASK DEFINED SOLDER MASK DETAILS NOT TO SCALE SOLDER MASK OPENING METAL UNDER SOLDER MASK SOLDER MASK DEFINED
www.ti.com EXAMPLE STENCIL DESIGN (5.8) 6X (0.65) 8X (0.45) 8X (1.5) (R ) TYP0.05 4221848/A 02/2015 TSSOP - 1.2 mm max heightPW0008A SMALL OUTLINE PACKAGE NOTES: (continued) 8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 9. Board assembly site may have different recommendations for stencil design. SYMM SYMM 4 5 SOLDER PASTE EXAMPLE BASED ON 0.125 mm THICK STENCIL SCALE:10X
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