37LV36_04 MICROCHIP | Alldatasheet
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Technical content
2004 Microchip Technology Inc. DS21109F-page 1 37LV36/65/128
FEATURES
- Operationally equivalent to Xilinx XC1700 family Wide voltage range 3.0 V to 6.0 V Maximum read current 10 mA at 5.0 V Standby current 100 µA typical Industry standard Synchronous Serial Interface/ 1 bit per rising edge of clock Full Static Operation Sequential Read/Program Cascadable Output Enable 10 MHz Maximum Clock Rate @ 5.0 Vdc Programmable Polarity on Hardware Reset Programming with industry standard EPROM pro- grammers Electrostatic discharge protection > 4,000 volts 8-pin PDIP/SOIC and 20-pin PLCC packages Data Retention > 200 years Temperature ranges: - Commercial: 0°C to +70°C - Industrial: -40°C to +85°C
DESCRIPTION
The Microchip Technology Inc. 37LV36/65/128 is a family of Serial OTP EPROM devices organized inter- nally in a x32 configuration. The family also features a cascadable option for increased memory storage where needed. The 37LV36/65/128 is suitable for many applications in which look-up table information storage is desirable and provides full static operation in the 3.0V to 6.0V V CC range. The devices also support the industry standard serial interface to the popular RAM-based Field Programmable Gate Arrays (FPGA). Advanced CMOS technology makes this an ideal boot- strap solution for today's high speed SRAM-based FPGAs. The 37LV36/65/128 family is available in the standard 8-pin plastic DIP , 8-pin SOIC and 20-pin PLCC packages. Device Bits Programming Word 37LV36 36,288 1134 x 32 37LV65 65,536 2048 x 32 37LV128 131,072 4096 x 32 PACKAGE TYPES BLOCK DIAGRAM CLK R ESET/OE CE CEO VPP Vss 9 VCCDATA VCC VPP CEO V SS DATA CLK R ESET/OE CE DATA CLK R ESET/OE CE VCC VPP CEO VSS PDIP 37LV36 37LV65 37LV128 SOIC PLCC 37LV36 37LV65 37LV128 37LV36 37LV65 37LV128 36K, 64K, and 128K Serial EPROM Family Xilinx is a registered trademark of Xilinx Corporation. Obsolete Device
DS21109F-page 2 2004 Microchip Technology Inc.
1.0 ELECTRICAL CHARACTERISTICS
1.1 Maximum Ratings*
VPP voltage w.r.t. VSS during *Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rat- ing only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating con- ditions for extended periods may affect device reliability. TABLE 1-1: PIN FUNCTION TABLE Name Function 8 20 DATA Data I/O 1 2 CLK Clock Input 2 4 RESET/OE Reset Input and Output Enable CE Chip Enable Input 4 8 VSS Ground 5 10 CEO Chip Enable Output 6 14 VPP Programming Voltage Supply 7 17 VCC +3.0V to 6.0V Power Supply 8 20 Not Labeled Not utilized, not connected TABLE 1-2: READ OPERATION DC CHARACTERISTICS VCC = +3.0 to 6.0V Commercial (C): Tamb = 0°C to +70°C Industrial (I): Tamb = -40°C to +85°C Parameter Symbol Min. Max. Units Conditions DATA, CE , CEO and Reset pins: High level input voltage Low level input voltage High level output voltage Low level output voltage V IH VIL VOH 1 VOH 2 VOL 2.0 -0.3 3.86 2.4 VCC 0.8 .32 V V V V IOH = -4 mA VCC ≥ 4.5V IOH = -4 mA VCC ≥ 3.0V IOL = 4.0 mA Input Leakage I LI -10 10 µAV IN = .1V to VCC Output Leakage I LO -10 10 µAV OUT = .1V to VCC Input Capacitance (all inputs/outputs) C INT — 10 pF Tamb = 25 °C; FCLK = 1 MHz (Note 1) Operating Current I CC Read — mA mA VCC = 6.0V, CLK = 10 MHz VCC = 3.6V, CLK = 2.5 MHz Outputs open Standby Current I CCS —1 0 0 µA µA VCC = 6.0V, CE = 5.8V VCC = 3.6V, CE = 3.4V Note 1: This parameter is initially characterized and not 100% tested.
2004 Microchip Technology Inc. DS21109F-page 3 37LV36/65/128
2.0 DATA
2.1 Data I/O
Three-state DATA output for reading and input during programming.
3.0 CLK
3.1 Clock Input
Used to increment the internal address and bit counters for reading and programming.
4.0 RESET/OE
4.1 Reset Input and Output Enable
A LOW level on both the CE and RESET/OE inputs enables the data output driver. A HIGH level on RESET/OE resets both the address and bit counters. In the 37LVXXX, the logic polarity of this input is pro- grammable as either RESET/OE or OE/RESET. This document describes the pin as RESET/OE although the opposite polarity is also possible. This option is defined and set at device program time. 5.0 CE
5.1 Chip Enable Input
CE is used for device selection. A LOW level on both CE and OE enables the data output driver. A HIGH level on CE disables both the address and bit counters and forces the device into a low power mode.
6.0 CEO
6.1 Chip Enable Output
This signal is asserted LOW on the clock cycle follow- ing the last bit read from the memory. It will stay LOW as long as CE and OE are both LOW. It will then follow CE until OE goes HIGH. Thereafter, CEO will stay HIGH until the entire EPROM is read again. This pin also used to sense the status of RESET polarity when Programming Mode is entered.
7.0 VPP
7.1 Programming Voltage Supply
Used to enter programming mode (+13 volts) and to program the memory (+13 volts). Must be connected directly to Vcc for normal Read operation. No over- shoot above +14 volts is permitted.
8.0 CASCADING SERIAL EPROMS
Cascading Serial EPROMs provide additional memory for multiple FPGAs configured as a daisy-chain, or for future applications requiring larger configuration mem- ories. When the last bit from the first Serial EPROM is read, the next clock signal to the Serial EPROM asserts its CEO output LOW and disables its DATA line. The sec- ond Serial EPROM recognizes the LOW level on its CE input and enables its DATA output. When configuration is complete, the address counters of all cascaded Serial EPROMs are reset if RESET goes LOW forcing the RESET/OE on each Serial EPROM to go HIGH. If the address counters are not to be reset upon completion, then the RESET/OE inputs can be tied to ground. Additional logic may be required if cascaded memories are so large that the rippled chip enable is not fast enough to activate successive Serial EPROMs.
9.0 STANDBY MODE
The 37LVXXX enters a low-power Standby Mode whenever CE is HIGH. In Standby Mode, the Serial EPROM consumes less than 100 µA of current. The output will remain in a high-impedance state regardless of the state of the OE input.
10.0 PROGRAMMING MODE
Programming Mode is entered by holding VPP HIGH (+13 volts) for two clock edges and then holding VPP = VDD for one clock edge. Programming mode is exited by driving a LOW on both CE and OE and then remov- ing power from the device. Figures 4 through 7 show the programming algorithm. 11.0 37LVXXX RESET POLARITY The 37LVXXX lets the user choose the reset polarity as either RESET/OE or OE/RESET. Any third-party com- mercial programmer should prompt the user for the desired reset polarity. The programming of the overflow word should be han- dled transparently by the EPROM programmer; it is mentioned here as supplemental information only. The polarity is programmed into the first overflow word location, maximum address+1. 00000000 in these locations makes the reset active LOW, FFFFFFFF in these locations makes the reset active HIGH. The default condition is RESET active HIGH.
DS21109F-page 4 2004 Microchip Technology Inc. FIGURE 11-1: READ CHARACTERISTICS TIMING TABLE 11-1: READ CHARACTERISTICS AC Testing Waveform: VIL = 0.2V; VIH = 3.0V AC Test Load: 50 pF VOL = VOL _MAX; VOH = VOH _MIN Symbol Parameter Limits 3.0V ≤ Vcc ≤ 6.0V Limits 4.5V ≤ Vcc ≤ 6.0V Units Conditions Min. Max. Min. Max. TOE OE to Data Delay — 45 — 45 ns TCE CE to Data Delay — 60 — 50 ns TCAC CLK to Data Delay — 200 — 60 ns TOH Data Hold from CE, OE or CLK 0 — 0 — ns TDF CE or OE to Data Float Delay — 50 — 50 ns Notes 1, 2 TLC CLK Low Time 100 — 25 — ns THC CLK High Time 100 — 25 — ns TSCE CE Set up Time to CLK (to guarantee proper counting) 40 — 25 — ns Note 1 TSCED CE setup time to CLK (to guarantee proper DATA read) 100 — 80 — ns THCE CE Hold Time to CLK (to guarantee proper counting) 0 — 0 — ns Note 1 THCED CE hold time to CLK (to guarantee proper DATA read) 50 — 0 — ns THOE OE High Time (Guarantees counters are Reset) 100 20 — ns CLK max Clock Frequency — 2.5 — 10 MHz Note 1: This parameter is periodically sampled and not 100% tested. 2: Float delays are measured with output pulled through 1kΩ to VLOAD = VCC /2.
2004 Microchip Technology Inc. DS21109F-page 5 37LV36/65/128 FIGURE 11-2: READ CHARACTERISTICS AT END OF ARRAY TIMING TABLE 11-2: READ CHARACTERISTICS AT END OF ARRAY AC Testing Waveform: VIL = 0.2V; VIH = 3.0V AC Test Load: 50 pF VOL = VOL _MAX; VOH = VOH _MIN Symbol Parameter Limits 3.0V ≤ Vcc ≤ 6.0V Limits 4.5V ≤ Vcc ≤ 6.0V Units Conditions Min. Max. Min. Max. TCDF CLK to Data Float Delay — 50 — 50 ns Notes 1, 2 TOCK CLK to CEO Delay — 65 — 40 ns TOCE CE to CEO Delay — 45 — 40 ns TOOE RESET/OE to CEO Delay — 45 — 40 ns Note 1: This parameter is periodically sampled and not 100% tested. 2: Float delays are measured with output pulled through 1kΩ to VLOAD = VCC /2.
DS21109F-page 6 2004 Microchip Technology Inc. TABLE 11-3: PIN ASSIGNMENTS IN THE PROGRAMMING MODE DIP/SOIC Pin PLCC Pin Name I/O Description 1 2 DATA I/O The rising edge of the clock shifts a data word in or out of the EPROM one bit at a time. 2 4 CLK I Clock Input. Used to increment the internal address/word counter for reading and programming operation. 3 6 RESET/OE I The rising edge of CLK shifts a data word into the EPROM when CE and OE are HIGH; it shifts a data word out of the EPROM when CE is LOW and OE is HIGH. The address/ word counter is incremented on the rising edge of CLK while CE is held HIGH and OE is held LOW. Note 1: Any modified polarity of the RESET/OE pin is ignored in the programming mode.
48 C E I The rising edge of CLK shifts a data word into the EPROM
when CE and OE are HIGH; it shifts a data word out of the EPROM when CE is LOW and OE is HIGH. The address/ word counter is incremented on the rising edge of CLK while CE is held HIGH and OE is held LOW. 51 0 V SS Ground pin. 61 4 C E O O The polarity of the RESET/OE pin can be read by sensing the CEO pin. Note 1: The polarity of the RESET/OE pin is ignored while in the Programming Mode. In final verification, this pin must be monitored to go LOW one clock cycle after the last data bit has been read. 71 7 V PP Programming Voltage Supply. Programming Mode is entered by holding CE and OE HIGH and VPP at VPP 1 for two rising clock edges and then lowering VPP to VPP 2 for one more ris- ing clock edge. A word is programmed by strobing the device with V PP for the duration TPGM. VPP must be tied to VCC for normal read operation. 82 0 V CC +5 V power supply input.
2004 Microchip Technology Inc. DS21109F-page 7 37LV36/65/128 TABLE 11-4: DC PROGRAMMING SPECIFICATIONS TABLE 11-5: AC PROGRAMMING SPECIFI CATIONS (SEE NOTE 2) Symbol Parameter Ambient Temperature: Tamb = 25°C ±5°C Limits Units Min. Max. VCCP Supply voltage during programming 5.0 6.0 V VIL Low-level input voltage 0.0 0.5 V VIH High-level input voltage 2.4 V CC V VOL Low-level output voltage — 0.4 V VOH High-level output voltage 3.7 — V VPP 1 Programming voltage* 12.5 13.5 V VPP 2 Programming Mode access voltage V CCP VCCP +1 V IPPP Supply current in Programming Mode — 100 mA IL Input or output leakage current -10 10 µA VCCL First pass Low-level supply voltage for final verification 2.8 3.0 V VCCH Second pass High-level supply voltage for final verification 6.4 6.6 V * No overshoot is permitted on this signal. VPP must not be allowed to exceed 14 volts. Symbol Parameter Limits Units Conditions Min. Max. TRPP 10% to 90% Rise Time of VPP 1 µsN o t e 1 TFPP 90% to 10% Fall Time of VPP 1 µsN o t e 1 TPGM VPP Programming Pulse Width .50 1.05 ms TSVC VPP Setup to CLK for Entering Programming Mode 100 ns Note 1 TSVCE CE Setup to CLK for Entering Programming Mode 100 ns Note 1 TSVOE OE Setup to CLK for Entering Programming Mode 100 ns Note 1 THVC VPP Hold from CLK for Entering Programming Mode 300 ns Note 1 TSDP Data Setup to CLK for Programming 50 ns THDP Data Hold from CLK for Programming 0 ns TLCE CE Low time to clear data latches 100 ns TSCC CE Setup to CLK for Programming/Verifying 100 ns TSIC OE Setup to CLK for Incrementing Address Counter 100 ns THIC OE Hold from CLK for Incrementing Address Counter 0 ns THOV OE Hold from VPP 200 ns Note 1 TPCAC CLK to Data Valid 400 ns TPOH Data Hold from CLK 0 ns TPCE CE Low to Data Valid 250 ns Note 1:This parameter is periodically sampled and not 100% tested. Note 2:While in Programming Mode, CE should only be changed while OE is HIGH and has been HIGH for 200 ns, and OE should only be changed while CE is HIGH and has been HIGH for 200 ns.
DS21109F-page 8 2004 Microchip Technology Inc. FIGURE 11-3: ENTER AND EXIT PROGRAMMING MODES FIGURE 11-4: PROGRAMMING CYCLE OVERVIEW (NO VERIFY UNTIL ENTIRE ARRAY IS PROGRAMMED) FIGURE 11-5: DETAILS OF PROGRAM CYCLE VCC VPP VPP2 VPP1 VCCP TRPP TFPP TSVC THVC TSVC TSVCE TSVOE CLK DATA CE RESET/OE Enter Mode Exit Mode ** 32 Clocks *Note: The CEO pin is high impedance when VPP = VPP 1 High if RESET/OE configured Low if RESET/OE configured
2 CLKS **Load
Load Word 2 Load Word 3 Load Word 4 Load Word 5 CE low to clear data latches Clock Increments Address Counter Enter Programming Mode 500 µs Programming Mode 500 µs Programming Mode 500 µs Programming Mode 500 µs Programming Mode V PP = VPP2 VCC = VCCP VPP1 VCC VPP CLK CE RESET/OE
DS21109F-page 10 2004 Microchip Technology Inc. FIGURE 11-8: 37LVXXX PROGRAMMING SPECIFICATIONS Device Passed Device Failure 1st Pass? Verify All Data Bits (Read Mode) VCC = VPP = VCCL and VCC = VPP = VCCH Exit Programming Mode Device Power Off Device Power On Pulse VPP to VPP 1 (13V) for Tpgm (500 µs) Load 32-bit word to be programmed CE low to clear EPROM internal data latches 32 bit data word to be programmed = FFFFFFFFhex Last Word? Increment Address Counter Device Power Off Device Power On Check Device ID Start Enter Programming Mode 1. V CC = VCCP VPP = VPP 2 CE = OE = VIH 2. V PP = VPP 1 for 2 CLK Rising Edges 3. V PP = VPP 2 for 1 CLK Rising Edge Pass No FailYes No Yes No Yes
2004 Microchip Technology Inc. DS21109F-page 11 37LV36/65/128 Product Identification System To order or to obtain information, e.g., on pricing or delivery, please use the listed part numbers, and refer to the factory or the listed sales offices. Package: P = Plastic DIP , 8 lead SN = Plastic SOIC (150 mil Body), 8 lead L = Plastic Leaded Chip Carrier (PLCC), 20 lead Temperature Blank = 0°C to +70°C Range: I =- 4 0 ° C t o + 8 5 ° C Shipping: Blank = Tube T = Tape and Reel Device: 37LV128 128K Serial EPROM 37LV65 64K Serial EPROM 37LV36 36K Serial EPROM 37LV36/65/128 – I T /P
DS21109F-page 12 2004 Microchip Technology Inc. NOTES:
2004 Microchip Technology Inc. DS21109F-page 13 Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEE LOQ , microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, MXDEV, MXLAB, PICMASTER, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2004, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Note the following details of the code protection feature on Microchip devices: Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company’s quality system processes and procedures are for its PICmicro® 8-bit MCUs, KEE LOQ ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.
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