37LV36 MICROCHIP | Alldatasheet

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Technical content

Ó 1996 Microchip Technology Inc. DS21109E-page 1 37LV36/65/128

FEATURES

  • Operationally equivalent to Xilinx Ò XC1700 family
  • Wide voltage range 3.0 V to 6.0 V
  • Maximum read current 10 mA at 5.0 V
  • Standby current 100 m A typical
  • Industry standard Synchronous Serial Interface/ 1 bit per rising edge of clock
  • Full Static Operation
  • Sequential Read/Program
  • Cascadable Output Enable
  • 10 MHz Maximum Clock Rate @ 5.0 Vdc
  • Programmable Polarity on Hardware Reset
  • Programming with industry standard EPROM pro- grammers
  • Electrostatic discharge protection > 4,000 volts
  • 8-pin PDIP/SOIC and 20-pin PLCC packages
  • Data Retention > 200 years
  • Temperature ranges: - Commercial: 0 C to +70 C - Industrial: -40 C to +85 C

DESCRIPTION

The Microchip Technology Inc. 37LV36/65/128 is a family of Serial OTP EPROM devices organized inter- nally in a x32 configuration. The family also features a cascadable option for increased memory storage where needed. The 37LV36/65/128 is suitable for many applications in which look-up table information storage is desirable and provides full static operation in the 3.0V to 6.0V V CC range. The devices also support the industry standard serial interface to the popular RAM-based Field Programmable Gate Arrays (FPGA). Advanced CMOS technology makes this an ideal boot- strap solution for today's high speed SRAM-based FPGAs. The 37LV36/65/128 family is available in the standard 8-pin plastic DIP, 8-pin SOIC and 20-pin PLCC packages. Device Bits Programming Word 37LV36 36,288 1134 x 32 37LV65 65,536 2048 x 32 37LV128 131,072 4096 x 32 PACKAGE TYPES BLOCK DIAGRAM CLK RESET/OE CE CEO VPP Vss VCCDATA VCC VPP CEO V SS DATA CLK RESET/OE CE DATA CLK RESET/OE CE V CC VPP CEO V SS PDIP 37LV36 37LV65 37LV128 SOIC PLCC 37LV36 37LV65 37LV128 37LV36 37LV65 37LV128 OE DATAEPROM ARRAY CEO ADDRESS Counter CLK RESET/OE CE 36K, 64K, and 128K Serial EPROM Family Xilinx is a registered trademark of Xilinx Corporation. This document was created with FrameMaker404

Ó 1996 Microchip Technology Inc.

1.0 ELECTRICAL CHARACTERISTICS

1.1 Maxim um Ratings*

V CC and input voltages w.r.t. V SS V PP voltage w.r.t. V SS during Output voltage w.r.t. V SS CC +0.6V C ESD protection on all pins 4 kV *Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rat- ing only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating con- ditions for extended periods may affect device reliability. TABLE 1-1: PIN FUNCTION TABLE Name Function 8 20 DATA Data I/O 1 2 CLK Clock Input 2 4 RESET/OE Reset Input and Output Enable CE Chip Enable Input 4 8 V SS Ground 5 10 CEO Chip Enable Output 6 14 V PP Programming Voltage Supply 7 17 V CC +3.0V to 6.0V Power Supply 8 20 Not Labeled Not utilized, not connected TABLE 1-2: READ OPERATION DC CHARACTERISTICS V CC = +3.0 to 6.0V Commercial (C): Tamb = 0˚C to +70˚C Industrial (I): Tamb = -40˚C to +85˚C Parameter Symbol Min. Max. Units Conditions DATA, CE , CEO and Reset pins: High level input voltage Low level input voltage High level output voltage Low level output voltage V IH V IL V OH 1 V OH 2 V OL 2.0 -0.3 3.86 2.4 V CC 0.8 .32 V V V V I OH = -4 mA V CC 4.5V I OH = -4 mA V CC 3.0V I OL = 4.0 mA Input Leakage I LI -10 10 m AV IN = .1V to V CC Output Leakage I LO -10 10 m AV OUT = .1V to V CC Input Capacitance (all inputs/outputs) C INT — 10 pF Tamb = 25 C; F CLK = 1 MHz (Note 1) Operating Current I CC Read — mA mA V CC = 6.0V, CLK = 10 MHz V CC = 3.6V, CLK = 2.5 MHz Outputs open Standby Current I CCS — 100 m A m A V CC = 6.0V, CE = 5.8V V CC = 3.6V, CE = 3.4V Note 1: This parameter is initially characterized and not 100% tested.

Ó 1996 Microchip Technology Inc. DS21109E-page 3 37LV36/65/128

2.0 DATA

2.1 Data I/O

Three-state DATA output for reading and input during programming.

3.0 CLK

3.1 Cloc k Input

Used to increment the internal address and bit counters for reading and programming.

4.0 RESET/OE

4.1 Reset Input and Output Enable

A LOW level on both the CE and RESET/OE inputs enables the data output driver. A HIGH level on RESET/OE resets both the address and bit counters. In the 37LVXXX, the logic polarity of this input is pro- grammable as either RESET/OE or OE/RESET. This document describes the pin as RESET/OE although the opposite polarity is also possible. This option is defined and set at device program time. 5.0 CE

5.1 Chip Enab le Input

CE is used for device selection. A LOW level on both CE and OE enables the data output driver. A HIGH level on CE disables both the address and bit counters and forces the device into a low power mode.

6.0 CEO

6.1 Chip Enab le Output

This signal is asserted LOW on the clock cycle follow- ing the last bit read from the memory. It will stay LOW as long as CE and OE are both LOW. It will then follow CE until OE goes HIGH. Thereafter, CEO will stay HIGH until the entire EPROM is read again. This pin also used to sense the status of RESET polarity when Programming Mode is entered.

7.0 VPP

7.1 Pr ogramming Voltage Supply

Used to enter programming mode (+13 volts) and to program the memory (+13 volts). Must be connected directly to Vcc for normal Read operation. No over- shoot above +14 volts is permitted.

8.0 CASCADING SERIAL EPROMS

Cascading Serial EPROMs provide additional memory for multiple FPGAs configured as a daisy-chain, or for future applications requiring larger configuration mem- ories. When the last bit from the first Serial EPROM is read, the next clock signal to the Serial EPROM asserts its CEO output LOW and disables its DATA line. The sec- ond Serial EPROM recognizes the LOW level on its CE input and enables its DATA output. When configuration is complete, the address counters of all cascaded Serial EPROMs are reset if RESET goes LOW forcing the RESET/OE on each Serial EPROM to go HIGH. If the address counters are not to be reset upon completion, then the RESET/OE inputs can be tied to ground. Additional logic may be required if cascaded memories are so large that the rippled chip enable is not fast enough to activate successive Serial EPROMs.

9.0 STANDBY MODE

The 37LVXXX enters a low-power Standby Mode whenever CE is HIGH. In Standby Mode, the Serial EPROM consumes less than 100 m A of current. The output will remain in a high-impedance state regardless of the state of the OE input.

10.0 PROGRAMMING MODE

Programming Mode is entered by holding V PP HIGH (+13 volts) for two clock edges and then holding V PP V DD for one clock edge. Programming mode is exited by driving a LOW on both CE and OE and then remov- ing power from the device. Figures 4 through 7 show the programming algorithm. 11.0 37LVXXX RESET POLARITY The 37LVXXX lets the user choose the reset polarity as either RESET/OE or OE/RESET. Any third-party com- mercial programmer should prompt the user for the desired reset polarity. The programming of the overflow word should be han- dled transparently by the EPROM programmer; it is mentioned here as supplemental information only. The polarity is programmed into the first overflow word location, maximum address+1. 00000000 in these locations makes the reset active LOW, FFFFFFFF in these locations makes the reset active HIGH. The default condition is RESET active HIGH.

Ó 1996 Microchip Technology Inc. FIGURE 11-1: READ CHARACTERISTICS TIMING TABLE 11-1: READ CHARACTERISTICS AC Testing Waveform: V IL = 0.2V; V IH = 3.0V AC Test Load: 50 pF V OL = V OL _MAX; V OH = V OH _MIN Symbol Parameter Limits 3.0V Vcc 6.0V Limits 4.5V Vcc 6.0V Units Conditions Min. Max. Min. Max. T OE OE to Data Delay — 45 — 45 ns T CE CE to Data Delay — 60 — 50 ns T CAC CLK to Data Delay — 200 — 60 ns T OH Data Hold from CE, OE o r C L K 0—0—n s T DF CE or OE to Data Float Delay — 50 — 50 ns Notes 1, 2 T LC CLK Low Time 100 — 25 — ns T HC CLK High Time 100 — 25 — ns T SCE CE Set up Time to CLK (to guarantee proper counting) 40 — 25 — ns Note 1 T SCED CE setup time to CLK (to guarantee proper DATA read) 100 — 80 — ns T HCE CE Hold Time to CLK (to guarantee proper counting) 0—0—n s Note 1 T HCED CE hold time to CLK (to guarantee proper DATA read) 50 — 0 — ns T HOE OE High Time (Guarantees counters are Reset) 100 20 — ns CLK max Clock Frequency — 2.5 — 10 MHz Note 1: This parameter is periodically sampled and not 100% tested. 2: Float delays are measured with output pulled through 1k W to V LOAD = V CC /2. THCETSCE THOE TDF TOH TOH THC TCAC TLC TSCE TOE DATA CLK RESET/OE CE TCE TSCED THCED

Ó 1996 Microchip Technology Inc. DS21109E-page 5 37LV36/65/128 FIGURE 11-2: READ CHARACTERISTICS AT END OF ARRAY TIMING TABLE 11-2: READ CHARACTERISTICS AT END OF ARRAY AC Testing Waveform: V IL = 0.2V; V IH = 3.0V AC Test Load: 50 pF V OL = V OL _MAX; VOH = VOH _MIN Symbol Parameter Limits 3.0V £ Vcc £ 6.0V Limits 4.5V £ Vcc £ 6.0V Units Conditions Min. Max. Min. Max. TCDF CLK to Data Float Delay — 50 — 50 ns Notes 1, 2 TOCK CLK to CEO Delay — 65 — 40 ns TOCE CE to CEO Delay — 45 — 40 ns TOOE RESET/OE to CEO Delay — 45 — 40 ns Note 1: This parameter is periodically sampled and not 100% tested. 2: Float delays are measured with output pulled through 1kW to VLOAD = VCC /2. RESET/OE FIRST BIT TOOE T OCETOCE LAST BIT T OCK T CDF CE CLK DATA CEO

DS21109E-page 6 Ó 1996 Microchip Technology Inc. TABLE 11-3: PIN ASSIGNMENTS IN THE PROGRAMMING MODE DIP/SOIC Pin PLCC Pin Name I/O Description 1 2 DATA I/O The rising edge of the clock shifts a data word in or out of the EPROM one bit at a time. 2 4 CLK I Clock Input. Used to increment the internal address/word counter for reading and programming operation. 3 6 RESET/OE I The rising edge of CLK shifts a data word into the EPROM when CE and OE are HIGH; it shifts a data word out of the EPROM when CE is LOW and OE is HIGH. The address/ word counter is incremented on the rising edge of CLK while CE is held HIGH and OE is held LOW. Note 1: Any modified polarity of the RESET/OE pin is ignored in the programming mode.

48 C E I The rising edge of CLK shifts a data word into the EPROM

when CE and OE are HIGH; it shifts a data word out of the EPROM when CE is LOW and OE is HIGH. The address/ word counter is incremented on the rising edge of CLK while CE is held HIGH and OE is held LOW. 51 0 V SS Ground pin. 6 14 CEO O The polarity of the RESET/OE pin can be read by sensing the CEO pin. Note 1: The polarity of the RESET/OE pin is ignored while in the Programming Mode. In final verification, this pin must be monitored to go LOW one clock cycle after the last data bit has been read. 71 7 V PP Programming Voltage Supply. Programming Mode is entered by holding CE and OE HIGH and VPP at VPP 1 for two rising clock edges and then lowering VPP to VPP 2 for one more ris- ing clock edge. A word is programmed by strobing the device with V PP for the duration TPGM. VPP must be tied to VCC for normal read operation. 82 0 V CC +5 V power supply input.

Ó 1996 Microchip Technology Inc. DS21109E-page 7 37LV36/65/128 TABLE 11-4: DC PROGRAMMING SPECIFICATIONS TABLE 11-5: AC PROGRAMMING SPECIFICATIONS (SEE NOTE 2) Symbol Parameter Ambient Temperature: Tamb = 25°C –5°C Limits Units Min. Max. VCCP Supply voltage during programming 5.0 6.0 V VIL Low-level input voltage 0.0 0.5 V VIH High-level input voltage 2.4 V CC V VOL Low-level output voltage — 0.4 V VOH High-level output voltage 3.7 — V VPP 1 Programming voltage* 12.5 13.5 V VPP 2 Programming Mode access voltage V CCP VCCP +1 V IPPP Supply current in Programming Mode — 100 mA IL Input or output leakage current -10 10 mA VCCL First pass Low-level supply voltage for final verification 2.8 3.0 V VCCH Second pass High-level supply voltage for final verification 6.4 6.6 V * No overshoot is permitted on this signal. VPP must not be allowed to exceed 14 volts. Symbol Parameter Limits Units Conditions Min. Max. TRPP 10% to 90% Rise Time of VPP 1 ms Note 1 TFPP 90% to 10% Fall Time of VPP 1 ms Note 1 TPGM VPP Programming Pulse Width .50 1.05 ms TSVC VPP Setup to CLK for Entering Programming Mode 100 ns Note 1 TSVCE CE Setup to CLK for Entering Programming Mode 100 ns Note 1 TSVOE OE Setup to CLK for Entering Programming Mode 100 ns Note 1 THVC VPP Hold from CLK for Entering Programming Mode 300 ns Note 1 TSDP Data Setup to CLK for Programming 50 ns THDP Data Hold from CLK for Programming 0 ns TLCE CE Low time to clear data latches 100 ns TSCC CE Setup to CLK for Programming/Verifying 100 ns TSIC OE Setup to CLK for Incrementing Address Counter 100 ns THIC OE Hold from CLK for Incrementing Address Counter 0 ns THOV OE Hold from VPP 200 ns Note 1 TPCAC CLK to Data Valid 400 ns TPOH Data Hold from CLK 0 ns TPCE CE Low to Data Valid 250 ns Note 1:This parameter is periodically sampled and not 100% tested. Note 2:While in Programming Mode, CE should only be changed while OE is HIGH and has been HIGH for 200 ns, and OE should only be changed while CE is HIGH and has been HIGH for 200 ns.

DS21109E-page 8 Ó 1996 Microchip Technology Inc. FIGURE 11-3: ENTER AND EXIT PROGRAMMING MODES FIGURE 11-4: PROGRAMMING CYCLE OVERVIEW (NO VERIFY UNTIL ENTIRE ARRAY IS PROGRAMMED) FIGURE 11-5: DETAILS OF PROGRAM CYCLE VCC VPP VPP2 VPP1 VCCP TRPP TFPP TSVC THVC TSVC TSVCE TSVOE CLK DATA CE RESET/OE 1 ms V SS V SS V SS V SS VSS VPP VCC CE RESET/OE CLK VPP2 VCCP Enter Mode Exit Mode ** 32 Clocks *Note: The CEO pin is high impedance when VPP = VPP 1 High if RESET/OE configured Low if RESET/OE configured

2 CLKS **Load

Load Word 2 Load Word 3 Load Word 4 Load Word 5 CE low to clear data latches Clock Increments Address Counter Enter Programming Mode 500 µs Programming Mode 500 µs Programming Mode 500 µs Programming Mode 500 µs Programming Mode V PP = VPP2 VCC = VCCP VPP1 VCC VPP CLK CE RESET/OE V PP CLK CE RESET/OE DATA Load PROM Internal Data Latches 12 32 (Last Bit) TRPP TFPP TPGM THOV THDP TSCC TLCE Clear PROM Internal Data Latches Program Pulse Increment Word Counter TSDP THIC TSIC *Note: The programmer must float the data pin while CE is low to avoid bus contention

Ó 1996 Microchip Technology Inc. DS21109E-page 9 37LV36/65/128 FIGURE 11-6: READ MANUFACTURER AND DEVICE ID OVERVIEW FIGURE 11-7: DETAILS OF READ MANUFACTURER AND DEVICE ID RESET/OE VCC = VCCP VCC VPP CLK CE CEO VPP1 VPP = VPP2 Enter Programming Mode

7 Clocks To

High if RESET/OE configured Low if RESET/OE configured Data Clock past user memory array to ID location () 37LV128 needs 4104 clocks 37LV36/65 needs 2056 clocks

8 Clocks To

29 Hex 37LV128 = 72 Hex

37LV65 = 71 Hex 37LV36 = 70 Hex X DATA RESET/OE CE CLK TPCE LSB=1 0 0 1 0 1 0 0 LSB • • • Device IDMicrochip ID = 29 Hex TPCAC TPOH

  • • •

DS21109E-page 10 Ó 1996 Microchip Technology Inc. FIGURE 11-8: 37LVXXX PROGRAMMING SPECIFICATIONS Device Passed Device Failure 1st Pass? Verify All Data Bits (Read Mode) VCC = VPP = VCCL and VCC = VPP = VCCH Exit Programming Mode Device Power Off Device Power On Pulse VPP to VPP 1 (13V) for Tpgm (500 ms) Load 32-bit word to be programmed CE low to clear EPROM internal data latches 32 bit data word to be programmed = FFFFFFFFhex Last Word? Increment Address Counter Device Power Off Device Power On Check Device ID Start Enter Programming Mode 1. V CC = VCCP VPP = VPP 2 CE = OE = VIH 2. V PP = VPP 1 for 2 CLK Rising Edges 3. V PP = VPP 2 for 1 CLK Rising Edge Pass No FailYes No Yes No Yes

Ó 1996 Microchip Technology Inc. DS21109E-page 11 37LV36/65/128 Product Identification System To order or to obtain information, e.g., on pricing or delivery, please use the listed part numbers, and refer to the factory or the listed sales offices. Package: P = Plastic DIP, 8 lead SN = Plastic SOIC (150 mil Body), 8 lead L = Plastic Leaded Chip Carrier (PLCC), 20 lead Temperature Blank = 0˚C to +70˚C Range: I = -40˚C to +85˚C Shipping: Blank = Tube T = Tape and Reel Device: 37LV128 128K Serial EPROM 37LV65 64K Serial EPROM 37LV36 36K Serial EPROM 37LV36/65/128–IT/ P

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