STE36N50 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
ky7 T; SGS-THOMSON MICROELECTRONICS STE36N50 eT ee N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE | TvPE Voss to - sv |<o14a| 36a | =» HIGH CURRENT POWER MODULE Cs s AVALANCHE RUGGED TECHNOLOGY - OZ (SEE IRFP450 FOR RATING) ' 4 oF « VERY LARGE SOA-LARGEPEAKPOWER | ' Se CAPABILITY a ie » EASY TO MOUNT w = SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS » EXTREMELY LOW Rin JUNCTION TO CASE ISOTOP » VERY LOW DRAIN TO CASE CAPACITANCE » VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY <5 nl) s ISOLATED PACKAGE UL RECOGNIZED (FILE No £81743) INTERNAL SCHEMATIC DIAGRAM INDUSTRIAL APPLICATIONS: » SMPS & UPS 3 ' » MOTOR CONTROL Th = WELDING EQUIPMENT « OUTPUT STAGE FOR PWM, ULTRASONIC ‘ CIRCUITS seas | , ABSOLUTE MAXIMUM RATINGS | Symbol | Parameter es ee Vos__ [Drain-Source Voltage (Vas = 0) ee. ee | Voor }Drain-Gate Voltage (Res = 20 kd} SO Cd __Vas__|Gate-Source Woltage ee ee lo Drain Current (continuous) at T; = 25 °C a ee ee lo [Drain Current (continuous) at To = 100 °C a ee Px [Total Dissipation at e=25°C ——s«dL~=SSt~=~SSSC*~‘“‘SC*rCOW Tos 510 160 Viso 2500 .*) Putse width fimited by sate operating area uly 1993 1/6 301
Run-ease [Thermal Resistance Junction-case Max eciw Finen [Thermal Resistance Case-heatsink With Conductive JGrease Applied Max °orw ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol | Parameter Test Conditions [ min. | Typ. | Max. | Unit | Vienjoss |Drain-source Ip=1mA Ves=0V v Breakdown Voltage | Zero Gate Voltage Vos = Max Rating 300 | pA Drain Current (Vos = 0) |Vos = Max Rating x0.8_Te= 125°C 1.5 | mA Gate-body Leakage |Vas= + 20V £300 | nA Current (Vos = 0) ON (*) Roston) [Static Drain-source On |Vas= 10V Ip = 18 A\\ a Resistance _ DYNAMIC [Symbol | Parameter | Test Conditions [ in. | typ. [ Max. | unit gis (*) [Forward Vos=15V lo=18A Ss ‘Transconductance | _ _ Gisx [Input Capacitance |Vos= 25V f=1MHz Vos-0V a | nF Coss Output Capacitance 1800 pr Gre [Reverse Transfer 750 | pF Capacitance __ SWITCHING ON Symbol “Parameter | __ Test Conditions min. | Typ. | Max. | Unit tajon) _|Turn-on Time Voo= 250V Ip =18A 8 | ns te [Rise Time Ro-4.72 Vos = 10V 107 ns (see test circuit, figure 1) _ (Gifdtjon |Turn-on Gurrent Slope |Voo= 400V [p= 96 A 500 Alus Ro=4702 Vos =10V (see test circuit, figure 3) Total Gate Charge [Yoo = 400V lo = 3A nG Ves=10V - _ ao ss-tHomson V7 icaoascraomes 302
ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbol Parameter _Test Conditions Min. | Typ. Unit tavotn |Off-voltage Rise Time Voo=400V Ip =36A | 70 ns th Fall Time Ro = 479 Ves = 10 V 30 ns te Cross-over Time |(see test circuit, figure 3) 100 ns SOURCE DRAIN DIODE Iso Source-drain Current 36 A Isom(*) | Source-drain Current 144 A (pulsed) oo _ Vso (*) | Forward On Voltage Iso = 36 A Ves =0 _ il 14 Vv tr |Reverse Recovery Iso = 36 A di/dt = 100 Ayus 1100 ns Time Voo=100V_ T= 150°C | Qn Reverse Recovery (see test circuit, figure 3) 38.5 ne Charge JnRM Reverse Recovery 70 A Current (+) Pulsed: Pulse duration = 300 us, duty cycle 1.5% {6} Pulse width ited by sate operating area Safe Operating Area Thermal Impedance — a ne ar 0) ag Pe ed A FST Fa Sati omer | i wl. AHN TT IL Hoe Bt a F yoo LEU (EAR RST tH Speers csi ese ecae: 2 ZSAP Sa Hit Ele = 0.5 Fe emt td 10! ZENS Nh Ul se an “Fpit. oreearin SHH ro LLL BF | II 10° LTT IN corn Ea Ti Fee masses ett eer memett FRA o.os ti ean a vos TT Tf CT 10° 10" 107 10°" Vos (¥v) tof 105 10? 10-7 40? 4, (5) — 57 sés:THomson 8 CROLECTRONES 303
Derating Curve Output Characteristics ao coo tt ee) TT essa gscesseee a4 PR Po MH eo | + | HER eH Li ga | ia pen SUGSTEEEESEE ol Ae oS CH Bane Zen [cor NOES 1 IATL HEC SEERA “OF | | sorry COCeSC CT y A | | ZO HEE NS TAT aN LA HY 0 50 700 Ty CC) ° 5 10 15 20 Vpg(¥) Transter Characteristics Transconductance o © Si f EPR] EB ee LH iteep Pr ff } || of AL ae LZ
20 Voi ofA LT Tt
Pi7 i ‘Aco 0 2 4 6 Vos (¥) 0 10 20 30 20 Ip(A) Static Drain-source On Resistance Gate Charge vs Gate-source Voltage "eer TTT | ve CCTTT TLL ais Hoek 0 Ho FA Ce EAA as : oe SuuSEESr 2s see +H Baan en Ste on {oo owl an A Per am (anes Ver A000 treet «FEES ES ww EEE EEE} HAH HHH 0. 10) «20 30 40 © 80 In(A) ° 100 200 300 400 Q,{nc) “6 ses-rHomsoy — 304
Capacitance Variations Normalized Gate Threshold Voltage vs Temperature “thee = mmm RGEC eS vo LSE fit PP PoP A ‘ } 4 ost + | NET Wt Py pi NE Wee TTT TTT TY ot tT ETT Ke~“Sen008 ae eeeeeee Lea oa _LE TET TT TT | Normalized Breakdown Voltage vs Temperature Normalized On Resistance vs Temperature “Toy =A vf, EAH Hoo LL ti aa EAH Pe a anne oe EU 1 cael or ae EA Vann of una 7 HEA eat | on HEHE “PPT TTT Tre “=50 a 50 1001, (0) “800 80100 WCC) Turn-on Current Slope Turn-off Drain-source Voltage Slope ai /at sesso dv/dt — oof TTT TPT TIT oho [TLL EL Oo
500 I+ H Yoo =400v |_| sH Yoo =400v |_|
4p =36A Ip =36A ONCE Tr ‘ HE sol AEE] A PONCE Cee wool J NEE] AACE Eee HAPS CNET EEE EEE ERS HH Cor HEE PPR SH a 20a "O80 To0Re a 307 aye 80 700R5 (a) Se Se 57 SSS-THOMSON ———_ — ne
Cross-over Time Source-drain Diode Forward Characteristics oT TOC zoo || Yee =400¥ [PTT itt Fite t iy yyy Hee HEAR 4 SCC C Ey woof Lee ETT Sennen AL ol _ ETT tT sao0| ATT See eee LTT yyw Ty | rit i tA yy got | | TT i wll Ze 20 \\ beet Pitt yy Try yy ann Perri LET T7 | TTT ° 20. 40 «6 | BO 1D0Re (9) 0 04 08 1.2 1.6 Veoi¥) Fig. 1: Switching Times Test Circuits For Fig. 2: Gate Charge Test Circuit Resistive Load i} VD | zy aKa aKa J lon Tt ( a come nie i ne Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times ; Stic ps. L=t00,4 BB SGS-THOMSON wos Gr Santas