350PJT IRF | Alldatasheet
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: INTERNATIONAL RECTIFIER 23 pe Bp yassuse ooobs4? O I T-25-/9 Data Sheet No. PD-3.079B a 1200A IrGq@ Gate Turn-Off Hockey Puk SCRs ne El Major Ratings Description/Features CT sors units The S5OPIT Series of GTO (gate turn-off) thyristors is de- a signed for power control applications such as uninterrupti- ITGO. ble power supplies (UPS), variable speed ac motor drives, : [rawsy | S88 TA ete. Since they can be turned off by a negative current TTIAV) [350 | A ___| __ pulse to the gate, devices in the 350PJT Series allow re- @Max. To [8 | °C | _—_ductions in overall size, weight, cost and acoustical noise sm @50Hz | 4500__—i| when compared to conventional thyristors that require i @60 Hz a bulky commutating circuits. Pr @ 50 He . [* seu ft ogee | SEOA average current [cer A] 200 controttable on-state current. : [oe 600 is] Mexia Carve ie of TO ee : [ee of Crtical vat of 1000 vise. Lu —~*«| oot Te m Available with maximum repetitive peak off-state voltage (Vpn) to 1600V. : CASE STYLE AND DIMENSIONS re 46.3 (1.823) GATE (WHITE) 10 (0.8 MAX. DIA. 5 (0 . Eaten” [ercaces | e_| 2 PLACES 4 at eT & <5 e 7) Ned ‘AUX. CATHODE (BLACK) a y 46.3 (1.823) (0.807) ze DPLAGES . maxX. |e a, 20.5 (0.807) rs cs xa See 3.7 (0.146) a 3.310.130) OF 2.210.086) peep 81.5 (3.209) Urta MAX. DIA. 81.5 (3.203) MAX: DIA, IR Case Style A-38 Dimensions in Millimeters and (Inches) . Pg. 35
INTERNATIONAL RECTIFIER 73 defjyassuse ononssa 1 ff T-25-14 350PUJT Series INTERNATIONAL RECTIFIER VOLTAGE RATINGS © Varm: VoRM — Vasm: Vosm — Max. Repetitive Peak Max. Non-Repetitive Peak Reverse Reverse and and OffState Voltage Off-State Voltage tp SSms iw) (9) w) Part Number Ty = 40°C to 125°C Ty = 25°C to 125°C 350PJT100 1000 1200 . 350PJT120 1200 1400 350PJT140 1400 1600 380PJT160 1600 1750 ELECTRICAL SPECIFICATIONS a ' Mx. | sso | T(AV) Max. average on-state current | a | 180° half sine wave conduction. 'TGaQ Max. controllable peak Ty = 125°C, Vom = 1/2 Vorm- Gga= 5, Cg = 3.0 uF. @ on-state current Note: Vg < 600V @ Ty = 25°C. Vs < 500V @ Ty = 126°C. (Vg is the voltage spike which appears on the dynamic on-state voltage trace during fall time.) TTsm Max. peak one cycle, non- 50 Hz half cycle sine wave EGttowin - Ps 9 any rated load condition, repetitive surge current oe S rs rectangle Pulse End with vated Vive appliod follow- iz half cycle sine wave 80 tz half. cvcle sine wave ing surge, SCR turned fully on. iy Max. |2t capability for fusing 101,000 t=10ms Rated Vary applied following surge, ‘92,000 ars t=8.3ms __ initial Ty < 125°C. Vim _Max.peak on-state voltage | 342 | _—V_—(| Ty = 25°C, Ir(ay) = 350A (1100A peak), Ig = 4A iL Typical etching cone | 30 | A | ty as TH TPs hating rent | 30 | A | Ty 28 BLOCKING a avidt Min, critical rateof ee | 1000 | ; Gate voltage = -2V Ty= 126°C te Ite vi of off state voltage [400 | “™M* | Gate-tocethode resistance 2 Vo 1/2 VoRM Tpm & Max, peak off-state and Ty = 128°C, Vp = rated Vom. Peak off-state current applies IRM reverse current for -2V or more negative gate voltage or for gate-to-cathode resistance = 20. di/dt Max. repetitive rate-of-rise dig/dt > 5 Alus, +igm > 10A, Itm < 12004, of turned-on current Alus | Vp <1/2 Vorm- . tot Max. turn-on time ‘gt is measured from instant at which ig = 0.11gM to instant at which vp = 0.1Vp with resistive load. Ty = 125°C, It = 1200A, +igm = 10A, dig/dt = 5 A/us, Vo = 1/2 VoRM- ton Min. permissible on-time ton is the time necessary to ensure that all cathode Islands are in ° conduction. Ty = 125°C, It = 1200A, Vp = 1/2 VoRM. Igm = 10A, dig/dt = 60 A/us. Taq Max. gate-controlled tgg Is measured from Instant at which Ig = 24A to instant at turn-off time which (7 = 120A with resistive load. Ty = 125°C, ly = 1200A, dig/dt = 60 Alus, Gga=5. @ © Peak off-state voltages apply for -2V or more negative gate voltage or for gate-to-cathode resistance = 29. : I ® Gea- apaer Tea = forced turn-off gain. I= on-state current. Applied |Gq = maximum negative gate current during turn-off interval. © Peak reverse voltages apply for zero or negative gate voltage. Pg. 36
INTERNATIONAL RECTIFIER 73° DEppysssse oooess4 3 [t 2as-l14 [Te@R] INTERNATIONAL RECTIFIER 350PUT Series ELECTRICAL SPECIFICATIONS (Continued) a - t Max. fall time ty is measured from instant at which I = 10B0A to instant at which I7 = 120A with resistive load. Ty = 125°C, Ip = 1200A, . Vp = 1/2 Vor. dig/dt = 60 Alus, GGa=5. @) Toft Min. permissible off-time Toff is measured from the instant at which the turn-off pulse is (2) applied to the gate to the earliest instant at which the GTO may be retriggered. Ty = 125°C, It = 1200A, dig/dt = 60 Alus, GGo = 5. Forward gate power is produced by positive 48,000 |» | tp <5us. gato current, reverse gate power is produced gate power by negative gate current. PGRIAV) Max. average reverse gate power +igm Max. peak positive gate A tp 100 us. Positive gate current may not be applied during current ~ reverse recovery interval. a Vi Max. repetitive peak [enw Meapemetem | |v [senting Tet Max. required DC gate [46 | To=-40°C May re ; ; . required gate trigger current is the lowest current totrigger [20 ~*| Te= 26°C value which will trigger all units with +12 volts [o8 | Te= 725°C anode-to-cathode and IT = 650A after triggering Vat Max. required DC gate | 126 | To=-40°C Max. required gate trigger voltags is the lowest voltage to trigger Vv value which will trigger all units with +12 volts : [10 ‘| To=25°C _anode-to-cathode and IT = 50A after triggering THERMAL-MECHANICAL SPECIFICATIONS Ty Junction operating goons [oe To z mm Ring Max. internal thermal DC operation; double side cooled, " resistance, junction-to-case deg. CW | mounting force = 11750N (26501bf). ee T Mounting force Min. 10,600 (2400) Lit —Aepronimato wean | seotian arf a <n TT eae Fe ~ SINUSOIDAL CURRENT WAVEFORM if Bia me RECTANGULAR CURRENT WAVEFORM i e™ INST FE EONAR TE CONST EL MERNNNESE _ 6 2 ENN Ze SER er SERN AN 5 pps | tT) | ins IA PAN PLLOERKRKRE TT eet ANN AAC LES i o TAWA ANNE 2 AL AAN NLL 2 3 po HMIY ANC AN THUG. Bee EN RONGNEI ee see ACNE o_o) TAKIN ONT * [Pees \\ NBNI 0 “100 200 300 400 500 600 0 100 200 300 400 600 600 ’ - . AVERAGE ONSTATE CURRENT OVER FULL CYCLE (AMPERES) AVERAGE ON-STATE CURRENT OVER FULL CYCLE (AMPERES) Fig. 1 — Average On-State Current Vs. Maximum Allowable Fig. 2 — Average On-State Current Vs. Maximum Allowable Case Temperature (Sinusoidal Current Waveform) Case Temperature (Rectangular Current Waveform) . Pg. 37 ———
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INTERNATIONAL RECTIFIER 73° DEBNessuSe OO0bbOl 8 § QS -/F [TER] INTERNATIONAL RECTIFIER 350PUT Series CCE eCCrEEEESHHEEEEEEH = é flim | [| 2 Ceecccee eee ee eee | | | Ler. PECEEEEEEE EH] g eee CPT 2Cyl pees ceeeeesseeseeess t/t Sa--EECEEPeeerr er) [Z| LCCrEeeEeE eee SEE
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INTERNATIONAL RECTIFIER 73° DE@Pysssuse ooowkoe o It- 25-1 350PUT Series INTERNATIONAL RECTIFIER [IeaR] @ 2 0 eee SESE ° 2c oe eo 2 eee 8 s<800Y Vp = 800V & Evo = coy EH FSFE sea = 8 He Goa Wn 5 (EE ave HHS EE 2 fuses TMA z 7 z HHH ECCI aa wl Se ne Sees G7 Serie cee
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& Sa eee Ss ee eet 3 ah wean BSC ee a Pe ti a F CeCe eet eet & TTT a F ae LCE ETT - 10 2 6 102 2 5 103 2 5 1 - 10 2 5 02 2 5 103 2 5 INSTANTANEOUS ON-STATE CURRENT (AMPERES) . INSTANTANEOUS ON-STATE CURRENT (AMPERES) Fig. 14 — Maximum Turn-Off Energy Per Pulse Fig. 15 — Maximum Turn-Off Energy Per Pulse Vs. Vs. On-State Current, Vp = 600, 800 & 1100V; On-State Current, Vp = 600V; Cg =1, 2, & 3 UF Cg = 3 LF 2 Is. os eet FA
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3 eo ECT TY ETT a ~LETtreii rt irri iT 2 5 102 2 5 1 2 5 10 0 os 10 15 20 25 30 35 40 45 50 ° INSTANTANEOUS ON-STATE CURRENT (AMPERES) SNUBBER CAPACITOR (MICROFARADS) Fig. 16 — Maximum Turn-Off Energy Per Pulse Vs. Fig. 17 — Maximum Controllable Peak On-State _ On-State Current, Vp = 800V; Cy = 1, 2, & 3uF Current Vs. Snubber Capacitor Value - GATE-CATHODE RESISTANCE (OHMS) LAI 2 5 10 2 5 10 2 5 100 - 8 ee ee ee ee Et 8 7; “SSS ee eT TH egw eeeaeea SSeS SEE g EEEEHH RE ert & § “SSE Sa aa Fa OO 8 OS ee ee ne os 2 peer CON UICC LCE) 2 ie? a HEH s \\ BE gw SENET eT we 3 OEE Et ESSER SSeS SSeS
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O12 5 1 2 5 W 2 5 100 102 2 5 wl 2 5 1 2 6 10 NEGATIVE GATE-CATHODE VOLTAGE (VOLTS) SHORT SINUSOIDAL PULSE DURATION (MILLISECONDS) —- Fig. 18 — Minimum Critical Rate-of-Rise Off-State Voltage Fig. 19 — Non-Repetitive Peak On-State Current Vs. Negative Gate-Cathode Voltage and Vs. Vs. Sinusoidal Pulse Duration _ Gate-Cathode Resistance ; Pg. 40
INTERNATIONAL RECTIFIER 7a deff yassys2 oooweo3 1 ff t-25-14. [TOR] INreRNaTIONAL RECTIFIER 350PUJT Series RECOMMENDED GATING CONDITIONS AT Ta 2 -10°C
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| . ANODE CURRENT H ' H i ANODE VOLTAGE |! i tr(te0) | ‘Wsf Yom ‘D i H J \\o1vo 1 Y Yo. ty ta ta: core 1 carecunrent |! ma ! GATE VOLTAGE |! itu °C ! Vor t | wl bet : ! H 01160 N — mn pw) ey, 05 tga i tom 2 164° i603 hoa! ver GOLTAGE OF dightt = 5 Alus ators iGO/dt >40A/us, G-K JUNCTION ig 231A" . Vga 715 ~20v. two< US tw 2 15s . . Ven=2~20v, ta 2 60 ys * ASSUMED DEVICE OPERATES DOWN TO -10°C. twa * twa? 65 Hs SNUBBER | SNUBBER | MINIMUM CAPACITOR | RESISTOR | ON-TIME Cs (uF) Rs (Q) (us) pa Fete Fig. 20 — Recommended Gating Conditions at Ta >-10°C Pg. 41