3400L LUGUANG | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Description

The 3400L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Batter y protection or in other Switching application. General Features

  • High power and current handing capability
  • Surface mount package
  • PWM applications
  • Load switch
  • Power management D G S Schematic diagram Marking and pin assignment SOT-23-3L Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 5.6 A Drain Current-Pulsed (Note 1) IDM 30 A Maximum Power Dissipation PD 1.4 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 89 /W℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS V GS=0V ID=250μA 30 - V Zero Gate Voltage Drain Current IDSS V DS=30V,VGS=0V - - 0.3 μA V D SS R D S(O N A 5.6 10V @ (Typ.) Ωm30V R D S(O N 4.5V (Typ.) @ Ωm I D R D S(O N 2.5V (Typ.) @ Ωm 3400L

Ordering Information

Part Number Case Packaging 3000pcs/Reel Marking SOT-23-3L3400L RoHS Compliant Application 3400L http://www.lgesemi .com mail:lge@lgesemi.comRevision:20210507-P1

Gate-Body Leakage Current IGSS V GS=±12V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) V DS=VGS,ID=250μA 0.7 1.15 1.4 V VGS=2.5V, ID=2.8A - mΩ VGS=4.5V, ID=2.8A - mΩ Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.8A - mΩ Forward Transconductance gFS V DS=5V,ID=5A 10 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - 820 - PF Output Capacitance Coss - 99 - PF Reverse Transfer Capacitance Crss VDS=15V,VGS=0V, F=1.0MHz - 77 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 3.3 - nS Turn-on Rise Time tr - 4.8 - nS Turn-Off Delay Time td(off) - 26 - nS Turn-Off Fall Time tf VDD=15V, RL=2.7Ω VGS=10V,RGEN=3Ω - 4 - nS Total Gate Charge Qg - 9.5 - nC Gate-Source Charge Qgs - 1.5 - nC Gate-Drain Charge Qgd VDS=15V,ID=5.6A, VGS=4.5V - 3 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=2A - - 1 V Diode Forward Current (Note 2) I S - - 5.6 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction t emperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 3400L http://www.lgesemi .com mail:lge@lgesemi.comRevision:20210507-P2

A 2.80 2.90 3.00 B 1.50 1.60 1.70 C 1.00 1.10 1.20 D 0.30 0.40 0.50 E 0.25 0.40 0.55 G 1.90 H 0.00 - 0.10 J 0.047 0.127 0.207 K 2.60 2.80 3.00 All Dimensions in mm A B C D E J H K G 3400L http://www.lgesemi .com mail:lge@lgesemi.comRevision:20210507-P6