3400 LUGUANG | Alldatasheet
Document overview
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Technical content
Description
The 3400 uses advanced trench technology to provide excell ent RDS(ON), low gate charge and operation with gate voltages as lo w as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features
- High power and current handing capability Surface mount package
- PWM applications
- Load switch
- Powe r management D G S Schematic diagram Marking and pin assignment SOT-23 Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 5.6 A Drain Current-Pulsed (Note 1) IDM 30 A Maximum Power Dissipation PD 1.4 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 89 /W℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS V GS=0V ID=250μA 30 - V Zero Gate Voltage Drain Current IDSS V DS=30V,VGS=0V - - 0.3 μA V D SS R D S(O N A 5.6 10V @ (Typ.) Ωm30V R D S(O N 4.5V (Typ.) @ Ωm I D R D S(O N 2.5V (Typ.) @ Ωm Page 1 3400 RoHS Compliant Application 3400
Ordering Information
Part Number Marking Packaging
3400 SOT-23
http://www.lgesemi .com mail:lge@lgesemi.comRevision:20210507-P1
Gate-Body Leakage Current IGSS V GS=±12V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) V DS=VGS,ID=250μA 0.7 0.95 1.4 V VGS=2.5V, ID=2.8A - mΩ VGS=4.5V, ID=2.8A - mΩ Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.8A - mΩ Forward Transconductance gFS V DS=5V,ID=5A 10 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - 820 - PF Output Capacitance Coss - 99 - PF Reverse Transfer Capacitance Crss VDS=15V,VGS=0V, F=1.0MHz - 77 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 3.3 - nS Turn-on Rise Time tr - 4.8 - nS Turn-Off Delay Time td(off) - 26 - nS Turn-Off Fall Time tf VDD=15V, RL=2.7Ω VGS=10V,RGEN=3Ω - 4 - nS Total Gate Charge Qg - 9.5 - nC Gate-Source Charge Qgs - 1.5 - nC Gate-Drain Charge Qgd VDS=15V,ID=5.6A, VGS=4.5V - 3 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=2A - - 1 V Diode Forward Current (Note 2) I S - - 5.6 A Notes: 1. Repetitive Rating: Puls e width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Page 2 3400 http://www.lgesemi .com mail:lge@lgesemi.comRevision:20210507-P2
A 2.80 2.90 3.00 B 1.20 1.30 1.40 C 0.90 1.00 1.10 D 0.39 0.40 0.45 E 0.20MIN G 1.90REF H 0.00 - 0.10 J 0.05 0.10 0.15 K 2.30 2.40 2.50 All Dimensions in mm A B C D E J H K G http://www.lgesemi .com mail:lge@lgesemi.comRevision:20210507-P6