SKIIP31NAB12 SEMIKRON | Alldatasheet
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© by SEMIKRON 0698 B 16 – 57 Absolute Maximum Ratings Symbol Conditions Values Units Inverter (Chopper see SKiiP 22 NAB 12) V CES V GES I C I CM I F = –I C I FM = –I CM T heatsink = 25 / 80 °C t p < 1 ms; T heatsink = 25 / 80 °C T heatsink = 25 / 80 °C t p < 1 ms; T heatsink = 25 / 80 °C 1200 ± 20 V V A A A A Bridge Rectifier V RRM I D I FSM I t T heatsink = 80 °C t p = 10 ms; sin. 180 °, T j = 25 °C t p = 10 ms; sin. 180 °, T j = 25 °C 1500 700 2400 V A A A s T j T stg V isol AC, 1 min. – 40 . . . + 150 – 40 . . . + 125 2500 V Characteristics Symbol Conditions min. typ. max. Units IGBT - Inverter V CEsat t d(on) t r t d(off) t f E on + E off C ies R thjh I C = 30 A T j = 25 (125) °C V CC = 600 V; V GE = ± 15 V I C = 30 A; T j = 125 °C R gon = R goff = 39 Ω inductive load V CE = 25 V; V GE = 0 V, 1 MHz per IGBT 2,5(3,1) 400 7,8 2,0 3,0(3,7) 110 110 600 0,7 V ns ns ns ns mJ nF K/W IGBT - Chopper * V CEsat t d(on) t r t d(off) t f E on + E off C ies R thjh I C = 15 A T j = 25 (125) °C V CC = 600 V; V GE = ± 15 V I C = 15 A; T j = 125 °C R gon = R goff = 82 Ω inductive load V CE = 25 V; V GE = 0 V, 1 MHz per IGBT 2,5(3,1) 400 4,0 1,0 3,0(3,7) 110 600 100 1,4 V ns ns ns ns mJ nF K/W Diode - Inverter (Diode - Chopper see SKiiP 22 NAB 12) V F = V EC V TO r T I RRM Q rr E off R thjh I F = 25 A T j = 25 (125) °C T j = 125 °C T j = 125 °C I F = 25 A, V R = – 600 V di F /dt = – 500 A/µs V GE = 0 V, T j = 125 °C per diode 2,0(1,8) 1,0 4,5 1,0 2,5(2,3) 1,2 1,2 V V m Ω A µC mJ K/W Diode - Rectifier V F R thjh I F = 35 A, T j = 25 °C per diode 1,2 1,6 V K/W Temperature Sensor R TS T = 25 / 100 °C 1000 / 1670 Ω Mechanical Data M Case case to heatsink, SI Units mechanical outline see page B 16 – 9 2,5 Nm SKiiP 31 NAB 12 MiniSKiiP 3 SEMIKRON integrated intelligent Power SKiiP 31 NAB 12 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter Case M3 UL recognized file no. E63532 specification of temperature sensor see part A common characteristics B 16 – 4 Options also available with powerful chopper. For characteristics please refer to Inverter IGBT T heatsink = 25 °C, unless otherwise specified CAL = Controlled Axial Lifetime Technology (soft and fast recovery) * For diagrams of the Chopper IGBT please refer to SKiiP 22 NAB 12
B 16 – 58 0698 © by SEMIKRON Fig. 3 Turn-on /-off energy = f (I C ) Fig. 4 Turn-on /-off energy = f (R G T j = 125 °C V CE = 600 V V GE = ± 15 V I C = 35 A T j = 125 °C V CE = 600 V V GE = ± 15 V R G = 39 Ω I Cpuls = 35 A V GE = 0 V f = 1 MHz Fig. 1 Typ. output characteristic, t p = 80 µs; 25 °C Fig. 2 Typ. output characteristic, t p = 80 µs; 125 °C CE
B 16 – 4 0698 © by SEMIKRON Tj = ≤ 150 °C VGE = ± 15 V tsc = ≤ 10 µs Lext < 25 nH Tj = ≤ 150 °C VGE = ± 15 V Tj = 150 °C VGE = ≥ 15 V Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT Fig. 10 Safe operating area at short circuit of the IGBT Fig. 7 Rated current of the IGBT ICop / IC = f (Th) 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 ICop /IC Mini1207 Th [°C] 0,5 1,5 2,5 0 500 1000 1500 ICpuls/IC Mini1209 VCE [V] 0 500 1000 1500 Note: *Allowed nu mbers of short ci rcuit:<1000 *Time between short circuit:>1s ICsc /ICN Mini1210 VCE [V] Fig. 11 Typ. freewheeling diode forward characteristic Fig. 12 Forward characteristic of the input bridge diode MiniSKiiP 1200 V
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