3134-100 MICROSEMI | Alldatasheet

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MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 3134-100

100 Watts, 36 Volts, 100µs, 10%

The 3134-100 is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 100µõs pulse width, 10% duty factor across the 3100 to 3400 MHz band. This hermetically solder-sealed transistor is specifically designed for S-band radar applications. It utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55KS-1 Common Base ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25∴°C1 570 W Maximum Voltage and Current Collector to Base Voltage (BVces) 65 V Emitter to Base Voltage (BVebo) 3.0 V Collector Current (Ic) 17 A Maximum Temperatures Storage Temperature -65 to +200 ∴°C Operating Junction Temperature +200 ∴°C ELECTRICAL CHARACTERISTICS @ 25∴°C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Power Output F=3100-3400 MHz 100 135 W Gain Power Gain Vcc = 36V 8.0 9.3 ∴ηc Collector Efficiency Pulse Width = 100 us 40 % Droop Droop Duty Cycle = 10% 0.5 dB IRL Input Return Loss Pin = 16W -7 dB VSWR-S Stability 1.5:1 VSWR-T Survivability 2.0:1 FUNCTIONAL CHARACTERISTICS @ 25∴°C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS BVebo Emitter to Base Breakdown Ie = 30 mA 3.0 V BVces Collector to Emitter Breakdown Ic = 120 mA 65 V Ices Collector to Emitter Leakage Vce = 36 V 7 mA ∴θjc Thermal Resistance 0.35 ∴°C/W Tstg Storage Temperature -65 200 ∴°C

MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. Typical Dynamic Range Data Vcc = 36 Volts, Pulse Width = 100∴µs, Duty = 10 % 3 1 3 4 - 1 0 0 P in v s . P o u t V c c = 3 6 V , 1 0 0 u s 1 0 % 0 . 0 0 2 0 .0 0 4 0 .0 0 6 0 .0 0 8 0 .0 0 1 0 0 .0 0 1 2 0 .0 0 1 4 0 .0 0 1 6 0 .0 0 P in ( W ) Pout (W) 3 .1 G H z 3 .2 G H z 3 .3 G H z 3 .4 G H z 3 1 3 4 -1 0 0 P o u t vs . Ga in V c c = 3 6 V , 1 0 0 u s 1 0 % -2 .0 0 0 .0 0 2 .0 0 4 .0 0 6 .0 0 8 .0 0 10 .0 0 P o u t ( W ) Gain (dB) 3 .1 G Hz 3 .2 G Hz 3 .3 G Hz 3 .4 G Hz 3134 – 100

MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. Input and Output Impedance 3134 – 100 Zin Zout Typical Impedance Values Frequency (MHz) Zin(?”) Zout(?”) 3100 4.79 - j0.44 5.51 – j5.76 3200 5.05 - j0.38 5.10 – j5.68 3300 5.29 - j0.37 4.75 – j5.55 3400 5.50 - j0.39 4.47 – j5.38 * Vcc = 36V, Pout = 100W min * Pulse Format: 100 uS 10% Input Matching Network Output Matching Network

MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. Broadband Test Circuit PCB Material: Rogers RT6010, Er 10.2, 25mil Circuit Dimensions Component List Designation W (mil) L (mil) Designation Value Size M1 22 112 C1 2200 uF Electrolytic M2 103 68 C2 100 pF ATC B M3 22 115 C3 10000 pF ATC B M4 266 113 C4 10 pF ATC A M5 78 62 R1 8.2 ohms 1206 M6 35 345 L1 20 AWG wire 400 mil M7 400 160 M8 450 150 M9 86 188 M10 255 84 M11 22 135 M12 99 83 M13 22 245 3134 – 100

MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 3134 – 100