30TPS16PBF

30TPS16PBF IRF | Alldatasheet

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Major Ratings and Characteristics IT(AV) Sinusoidal 20 A waveform IRMS 30 A VRRM/ VDRM 1600 V ITSM 300 A VT @ 20 A, TJ = 25°C 1.3 V dv/dt 500 V/µs di/dt 150 A/µs T J - 40 to 125 °C Characteristics Values Units TO-247AC Description/ Features The 30TPS16PbF SAFEIR series of silicon con- trolled rectifiers are specifically designed for me- dium power switching and phase control applica- tions. The glass passivation technology used has reliable operation up to 125°C junction tempera- ture. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. Package Outline PHASE CONTROL SCR Lead-Free ("PbF" suffix) Bulletin I2181 11/04 SAFEIR Series 30TPS16PbF VT < 1.3V @ 20A ITSM = 300A VRRM= 1600V www.irf.com

www.irf.com Voltage Ratings Part Number VRRM/VDRM, max. repetitive V RSM , maximum non repetitive I RRM/IDRM peak and off-state voltage peak reverse voltage 125°C VV m A 30TPS16PbF 1600 1700 10 IT(AV) Max. Average On-state Current 20 A @ T C = 95° C, 180° conduction half sine wave IRMS Max. RMS On-state Current 30 ITSM Max. Peak One Cycle Non-Repetitive 250 10ms Sine pulse, rated VRRM applied Surge Current 300 10ms Sine pulse, no voltage reapplied I2t Max. I 2t for Fusing 310 A 2s 10ms Sine pulse, rated V RRM applied 442 10ms Sine pulse, no voltage reapplied I2√t Max. I 2√t for Fusing 4420 A 2√s t = 0.1 to 10ms, no voltage reapplied VTM Max. On-state Voltage Drop 1.3 V @ 20A, T J = 25°C rt On-state Slope Resistance 12 m Ω TJ = 125°C VT(TO) Threshold Voltage 1.0 V IRM/IDMMax.Reverse and Direct 0.5 mA T J = 25 °C Leakage Current 10 T J = 125 °C IH Max. Holding Current 100 mA Anode Supply = 6V, Resistive load, Initial I T=1A IL Max. Latching Current 200 mA Anode Supply = 6V, Resistive load dv/dt Max. Rate of Rise of off-state Voltage 500 V/µs di/dt Max. Rate of Rise of turned-on Current 150 A/µs Absolute Maximum Ratings Parameters 30TPS.. Units Conditions VR = rated VRRM/ VDRM

www.irf.com Thermal-Mechanical Specifications TJ Max. Junction Temperature Range - 40 to 125 °C Tstg Max. Storage Temperature Range - 40 to 125 RthJC Max. Thermal Resistance Junction 0.8 °C/W DC operation to Case R thJA Max. Thermal Resistance Junction 40 to Ambient R thCS Max. Thermal Resistance Case 0.2 Mounting surface, smooth and greased to Heatsink wt Approximate Weight 6 (0.21) g (oz.) T Mounting Torque Min. 6 (5) Kg-cm Max. 12 (10) (lbf-in) Case Style TO-247AC Jedec (Modified) Marking Device 30TPS16 Parameters 30TPS.. Units Conditions Triggering PGM Max. Peak Gate Power 8.0 W PG(AV) Max. Average Gate Power 2.0 + IGM Max. Peak Positive Gate Current 1.5 A - VGM Max. Peak Negative Gate Voltage 10 V IGT Max. Required DC Gate Current 60 mA Anode supply = 6V, resistive load, T J = - 10°C to Trigger 45 Anode supply = 6V, resistive load, T J = 25°C

20 Anode supply = 6V, resistive load, T J = 125°C

VGT Max. Required DC Gate Voltage 2.5 V Anode supply = 6V, resistive load, T J = - 10°C to Trigger 2.0 Anode supply = 6V, resistive load, T J = 25°C

1.0 Anode supply = 6V, resistive load, T J = 125°C

VGD Max. DC Gate Voltage not to Trigger 0.25 T J = 125°C, VDRM = rated value IGD Max. DC Gate Current not to Trigger 2.0 mA T J = 125°C, VDRM = rated value Parameters 30TPS.. Units Conditions Switching Parameters 30TPS.. Units Conditions tgt Typical Turn-on Time 0.9 µs T J = 25°C trr Typical Reverse Recovery Time 4 T J = 125°C tq Typical Turn-off Time 110

www.irf.com Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 100 110 120 130 0 5 10 15 20 25 30° 60° 90° 120° 180° Maximum Allowable Cas e T emperature (°C) Conduction Angle Average On-s tate Current (A) 30T PS .. S eries R (DC) = 0.8 °C/ WthJC 100 110 120 130 0 5 10 15 20 25 30 35 DC 30° 60° 90° 120°180° Average On-s tate Current (A) Maximum Allowable Cas e T emperature (°C) Conduction Period 30T PS .. S eries R (DC) = 0.8 °C/ WthJC 0 5 10 15 20 25 30 RM S Li m it Conduction Angle Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) 180° 120° 90° 60° 30° 30T PS .. S eries T = 125°CJ 0 1 02 03 04 05 0 DC 180° 120° 90° 60° 30° RM S Lim it Conduction P eriod Maximum Average On-s tate P ower Los s (W) Average On-s tate Current (A) 30T PS .. S eries T = 125°CJ 120 140 160 180 200 220 240 260 280 1 10 100 Number Of E qual Amplitude H alf Cycle Current P uls es (N) At Any R ated Load Condition And With Rated V Applied F ollowing S urge.RRM Peak Half S ine Wave On-state Current (A) Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J 3 0 TPS. . Se r i e s 120 140 160 180 200 220 240 260 280 300 0.01 0.1 1 Peak Half S ine Wave On-s tate Current (A) Pu lse Tra in Du ra t io n ( s) Versus Pulse T ra in Duration. Control Of Conduction May Not Be Maintained. Initial T = 125°C No Voltage R eapplied R ated V R eappliedRRM J 3 0 TPS. . Se r i e s Maximum Non R epetitive S urge Current

www.irf.com Fig. 7 - On-state Voltage Drop Characteristics Fig. 9 - GateCharacteristics Fig. 8 - Thermal Impedance ZthJC Characteristics 100 1000 01234567 T = 2 5 ° CJ Ins tantaneous On-s tate Current (A) Ins tantaneous On-s tate Voltage (V) T = 125°CJ 30T PS .. S eries 0.01 0.1 0.0001 0.001 0.01 0.1 1 S quare Wave Puls e Duration (s ) St e a d y St a t e V a l u e (DC Operation) S ingle Pulse D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 30T PS .. S eries T rans ient T hermal I mpedance Z (°C/W )thJC 0.1 100 0.001 0.01 0.1 1 10 100 (b) (a) (4) (3) (2) (1) Ins tantaneous Gate Current (A) I ns tantaneous Gate Voltage (V) TJ = 2 5 ° C TJ = 1 2 5 °C F requency L imited by P G(AV) TJ = - 1 0 ° C IGD VGD 30T PS .. S eries tr = 1 µs, tp >= 6 µs <= 30% rated di/dt: 1 0 V, 6 5 ohms b)R ecommended load l ine for rated di/dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs a)R ecommended load l ine for R ectangular gate puls e (1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, t p = 5 ms (4) PGM = 4 W, t p = 10 ms

www.irf.com Outline Table Dimensions in millimeters and inches 15.90 (0.626) 15.30 (0.602) 14.20 (0.559) 14.80 (0.583) 3.70 (0.145) 4.30 (0.170) 5.30 (0.208) 5.70 (0.225) 5.50 (0.217) 4.50 (0.177) (2 PLCS.) 3.55 (0.139) 3.65 (0.144) 2.20 (0.087) MAX. 1.00 (0.039) 1.40 (0.056) 0.40 (0.213) 0.80 ( 0.032) 4.70 (0.185) 5.30 (0.209) 1.5 (0.059) 2.5 (0.098) 2.40 (0.095) MAX. 10.86 (0.427) 10.94 (0.430) 20.30 (0.800) 19.70 (0.775) DIA. 12 3 Marking Information RECTIFIER INTERNATIONAL ASSEMBLY LOT CODE EXAMPLE: IN ASSEMBLY LINE "H" ASSEMBLED ON WW 35, 2000 WITH ASSEMBLY LOT CODE 5657 LOGO P = LEAD-FREE YEAR 0 = 2000 PART NUMBER LINE H WEEK 35 P035H 56 57 DATE CODE THIS IS A 30TPS16 30TPS16 (G) 3 (A) 1 (K)

www.irf.com Ordering Information Table

30 T P S 16 PbF

1 - Current Rating (30 = 30A) 2 - Circuit Configuration: T = Thyristor T = TO-247 4 - Type of Silicon: S = Standard Recovery Rectifier 5 - Voltage Rating (16 = 1600V) 6 - ! none = Standard Production ! PbF = Lead-Free IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 11/04 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site.