30SQ045T THINKISEMI | Alldatasheet
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Unit:inch(mm) ※ ThinkiSemi latest&matured p rocess Schottky ※ Low forward volta g e dro p ※ Hi g h current ca p abilit y Low reverse leakage current Low reverse leakage current ※ Hi g h sur g e current ca p abilit y Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Am p lifiers and Sound Device S y stems ※ Platin g Power Su pp l y ,Motor Control,UPS and SMPS etc. Mechanical Data Case:TO-263AB/D2PAK package outline Epoxy: UL 94V 0r a t ef l a m er e t a r d a n t Epoxy: UL 94V 0 rate flame retardant ※ Terminals: Solderable p er MIL-STD-202 method 208 ※ Polarit y : As marked on diode bod y ※ Mountin g p osition: An y ※ Wei g ht: 2.0 g ram a pp roximatel y 30SQ045T Pb Free Plating Product 30SQ045T Pb
30.0 Ampere,45Volt PhotoVoltaic Application Schottky Barrier Rectifier Diode
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2Rev.12T ※ Solar Junction Box Application Internal Configuration LEFT PIN RIGHT PIN Note: Pins Left & Right must be electrically connected at the printed circuit board. BOTTOM SIDE HEAT SINK Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT 30SQ045T Device marking code Repetitive Peak Reverse Voltage VRRM Average Rectified Output Current @60Hz sine wave, R-load, Ta=25℃ Io A 30 Surge(Non-repetitive)Forward Current @60Hz half sine- wave, 1 cycle, Ta=25℃ IFSM A 375 Current Squared Time @1ms≤t≤8.3ms Tj=25℃ I t A s 590 Storage Temperature Tstg ℃ -55 ~+150 Junction Temperature IN DC Forward Mode-Forward Operations，without reverse bias, t ≤1 h (Fig. 1)① Tj ℃ -55 ~+200 NOTE Meets the requirement s of IEC 61215 Ed. 2 bypass diode thermal test. ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT TEST CONDITIONS 30SQ045T Maximum instantaneous forward voltage drop per diode VFM V IFM=30.0A 0.55 Maximum DC reverse current at rated DC blocking voltage per diode IRRM1 mA VRM=VRRM Ta=25℃ 0.1 IRRM2 VRM=VRRM Ta=100℃ 10 Thermal Characteristics （Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT 30SQ045T Thermal Resistance Between junction and case R θJ-C ℃/W 1.5 V 45V(Min.) 30SQ045T
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.12T Characteristics (Typical) Instantaneous Forward Current (A) 02 04 06 08 0 1 0 0 0.1 1.0 100 Tj=100 Tj=25 Instantaneous Reverse Current (mA) Percent of Rated Peak Reverse Voltage (%) 10.0 5.0 Case Temperature （℃） Average Forward Output Current (A) FIG1:Io -Tc Curve FIG4: Typical Reverse Characteristics TC measure point IN DC 15.0 20.0 25.0 50 100 150 200 0.4 0.6 0.8 1.0 Ta=25 0.2 1.0 100 Instantaneous Forward Voltage (V) FIG3: Forward Voltage 0.01 5.0 0.5 1 2 10 20 100 8.3ms Single Half Sine-Wave JEDEC Method Peak Forward Surge Current (A) Number of Cycles 400 480 FIG2:Surge Forward Current Capability 320 240 160 30.0 0.1 30SQ045T