30SQ045 THINKISEMI | Alldatasheet
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Unit:inch(mm) ※ ThinkiSemi latest&matured p rocess Schottky ※ Low forward volta g e dro p ※ Hi g h current ca p abilit y Low reverse leakage current Low reverse leakage current ※ Hi g h sur g e current ca p abilit y Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Am p lifiers and Sound Device S y stems ※ Platin g Power Su pp l y ,Motor Control,UPS and SMPS etc. Mechanical Data Case:R-6/P-600 package outline Epoxy: UL 94V 0r a t ef l a m er e t a r d a n t Epoxy: UL 94V 0 rate flame retardant ※ Terminals: Solderable p er MIL-STD-202 method 208 ※ Polarit y : As marked on diode bod y ※ Mountin g p osition: An y ※ Wei g ht: 2.0 g ram a pp roximatel y 30SQ045 Pb Free Plating Product 30SQ045 Pb
30.0 Ampere,45Volt PhotoVoltaic Bypass Schottky Barrier Rectifier Diode
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2Rev.10T 0.360 (9.1) 0.340(8.6) DIA. 0.052 (1.3) 0.048 (1.2) DIA. 0.360(9.1) 0.340(8.6) Dimensions in inches and (millimeters) 1.0 (25.4) MIN. 1.0 (25.4) MIN. Maximum Ratings (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT 30SQ045 Device Marking Code 30SQ045 Repetitive Peak Reverse Voltage VRRM V 45 Average Rectified Output Current @60Hz sine wave, R-load, Ta=25℃ IO A 30 Surge(Non-repetitive)Forward Current @60Hz half sine wave, 1 cycle, Ta=25℃ IFSM A 380 Current Squared Time @1ms≤t≤8.3ms Tj=25℃ I t A s 599 Storage Temperature Tstg ℃ -55 ~+150 Junction Temperature IN DC Forward Mode-Forward Operations，without reverse bias, t ≤1 h (Fig. 1)① Tj ℃ -55 ~+200 NOTE ① Meets the requirements of IEC 612 15 Ed. 2 bypass diode thermal test. ■Electrical Characteristics (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT TEST CONDITIONS 30SQ045 Maximum instantaneous forward voltage drop per diode VFM V IFM=30.0A 0.55 Maximum DC reverse current at rated DC blocking voltage per diode IRRM1 mA VRM=VRRM Ta=25℃ 0.5 IRRM2 VRM=VRRM Ta=100℃ 50 Thermal Characteristics (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT 30SQ045 Thermal Resistance Between junction and case RθJ-C ℃/W 2.5 ※ Solar Junction Box Application
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.10T Characteristics (Typical) 1.0 100 Ta=25 Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 0 20 40 60 80 100 0.01 0.1 1.0 100 Tj=100 Tj=25 Instantaneous Reverse Current (mA) Percent of Rated Peak Reverse Voltage (%) IN DC 24.0 18.0 12.0 6.0 Case Temperature （℃） Average Forward Output Current (A) 1 2 10 20 100 8.3ms Single Half Sine-Wave JEDEC Method Peak Forward Surge Current (A) Number of Cycles 100 200 500 600 FIG2:Surge Forward Current CapabilityFIG1:Io -Tc Curve FIG4: Typical Reverse Characteristics FIG3: Forward Voltage 30.0 50 100 150 400 300 200 5 50 30SQ045