NTP30N20_V01 ONSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Features
- SourceïtoïDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
- Avalanche Energy Specified
- IDSS and RDS(on) Specified at Elevated Temperature
- PbïFree Package is Available*
Applications
- PWM Motor Controls
- Power Supplies
- Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit DrainïtoïSource Voltage VDSS 200 Vdc DrainïtoïSource Voltage (RGS = 1.0 M/C0087) VDGR 200 Vdc GateïtoïSource Voltage ï Continuous ï NonïRepetitive (tp/C011810 ms) VGS VGSM /C003430 /C003440 Vdc Drain Current ï Continuous @ TA 25°C ï Continuous @ TA 100°C ï Pulsed (Note 1) ID ID IDM Adc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 214 1.43 W W/°C Operating and Storage Temperature Range TJ, Tstg ï55 to +175 Single DrainïtoïSource Avalanche Energy ï Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL(pk) = 20 A, L = 3.0 mH, RG = 25 /C0087) EAS 450 mJ Thermal Resistance ï JunctionïtoïCase ï JunctionïtoïAmbient R/C0113JC R/C0113JA 0.7 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 10 /C0109s, Duty Cycle = 2%. *For additional information on our PbïFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
30 AMPERES
200 VOLTS
68 m/C0087 @ VGS = 10 V (Typ) NïChannel D S G Preferred devices are recommended choices for future use and best overall value. http://onsemi.com TOï220 CASE 221A STYLE 5 2 3 A = Assembly Location Y = Year WW = Work Week G = Pb ïFree Package 30N20G AYWW Device Package Shipping
ORDERING INFORMATION
NTP30N20 TO ï220 50 Units / Rail NTP30N20G TO ï220 (PbïFree)
50 Units / Rail
D G MARKING DIAGRAM & PIN ASSIGNMENT
http://onsemi.com ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainïtoïSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 /C0109Adc) Temperature Coefficient (Positive) V(BR)DSS 200 ï ï 307 ï ï Vdc mV/°C Zero Gate Voltage Collector Current (VGS = 0 Vdc, VDS = 200 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = 200 Vdc, TJ = 175°C) IDSS ï ï ï ï 5.0 125 /C0109Adc GateïBody Leakage Current (VGS = ± 30 Vdc, VDS = 0) IGSS ï ï ± 100 nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 250 /C0109Adc) Temperature Coefficient (Negative) VGS(th) 2.0 ï 2.9 ï8.9 4.0 ï Vdc mV/°C Static DrainïtoïSource OnïState Resistance (VGS = 10 Vdc, ID = 15 Adc) (VGS = 10 Vdc, ID = 10 Adc) (VGS = 10 Vdc, ID = 15 Adc, TJ = 175°C) RDS(on) ï ï ï 0.068 0.067 0.200 0.081 0.080 0.240 /C0087 DrainïtoïSource OnïVoltage (VGS = 10 Vdc, ID = 30 Adc) VDS(on) ï 2.0 2.5 Vdc Forward Transconductance (VDS = 15 Vdc, ID = 15 Adc) gFS ï 20 ï Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss ï 2335 ï pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) (VDS = 160 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss ï ï 380 148 ï ï Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Crss ï 75 ï SWITCHING CHARACTERISTICS (Notes 2 & 3) TurnïOn Delay Time (VDD = 100 Vdc, ID = 18 Adc, VGS = 5.0 Vdc, RG = 2.5 /C0087) (VDD = 160 Vdc, ID = 30 Adc, VGS = 10 Vdc, RG = 9.1 /C0087) td(on) ï ï ï ï ns Rise Time tr ï ï ï ï TurnïOff Delay Time td(off) ï ï ï ï Fall Time tf ï ï ï ï Gate Charge (VDS = 160 Vdc, ID = 30 Adc, VGS = 10 Vdc) (VDS = 160 Vdc, ID = 18 Adc, VGS = 5.0 Vdc) Qtot ï ï 100 ï nC Qgs ï ï ï ï Qgd ï 32 ï BODYïDRAIN DIODE RATINGS (Note 2) Forward OnïVoltage (IS = 30 Adc, VGS = 0 Vdc) (IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C) VSD ï ï 0.91 0.80 1.1 ï Vdc Reverse Recovery Time (IS = 30 Adc, VGS = 0 Vdc, dIS/dt = 100 A//C0109s) trr ï 230 ï ns ta ï 140 ï tb ï 85 ï Reverse Recovery Stored Charge QRR ï 1.85 ï /C0109C 2. Indicates Pulse Test: P. W. = 300 /C0109s max, Duty Cycle = 2%. 3. Switching characteristics are independent of oper ating junction temperature.
be charged by current from the generator. and Q2 and VGSP are read from the gate charge curve. onïstate when calculating td(off). is difficult to measure and, consequently, is not specified. maintain a value of unity regardless of the switching speed. however, snubbing reduces switching losses. Figure 7. Capacitance Variation
TOï220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR 4. EMITTER STYLE 3: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 4: PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. MAIN TERMINAL 2 STYLE 7: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. ANODE STYLE 10: PIN 1. GATE 2. SOURCE 3. DRAIN 4. SOURCE STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 8: PIN 1. CATHODE 2. ANODE 3. EXTERNAL TRIP/DELAY 4. ANODE STYLE 6: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 9: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 11: PIN 1. DRAIN 2. SOURCE 3. GATE 4. SOURCE STYLE 12: PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. NOT CONNECTED MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 98ASB42148BDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. PAGE 1 OF 1TOï220 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. Semiconductor Components Industries, LLC, 2019 www.onsemi.com
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