30N06L-TN3-R

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UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET www.unisonic.com.tw 1 of 8 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-087.H 60V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state re sistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.  FEATURES * RDS(ON) = 40mΩ@VGS = 10 V, ID=15A * Ultra low gate charge ( typical 20nC ) * Low reverse transfer Capacitance ( C RSS = typical 80 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability  SYMBOL TO-251 TO-252 TO-220 TO-220F TO-220F2 1 1 TO-220F1  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 30N06L-TA3-T 30N06G-TA3-T TO-220 G D S Tube 30N06L-TF1-T 30N06G-TF1-T TO-220F1 G D S Tube 30N06L-TF2-T 30N06G-TF2-T TO-220F2 G D S Tube 30N06L-TF3-T 30N06G-TF3-T TO-220F G D S Tube 30N06L-TM3-T 30N06G-TM3-T TO-251 G D S Tube 30N06L-TN3-T 30N06G-TN3-T TO-252 G D S Tube 30N06L-TN3-R 30N06G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source

UNISONIC TECHNOLOGIES CO., LTD 2 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 7 . H  ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 60 V Gate to Source Voltage V GSS ±20 V Continuous Drain Current TC = 25°C ID 30 A TC = 100°C 21.3 A Pulsed Drain Current (Note 2) I DM 120 A Avalanche Energy Single Pulsed (Note 3) E AS 300 mJ Repetitive (Note 2) E AR 8 mJ Power Dissipation TO-220 PD W TO-220F/ TO-220F2 TO-220F1 45 TO-251/TO-252 46 Junction Temperature T J +150 °C Operation Temperature T OPR -55 ~ +150 °C Storage Temperature T STG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repeativity rating: pulse wi dth limited by junction temperature 3. L=0.66mH, I AS=30A, VDD=25V, RG=20Ω, Starting TJ=25°C  THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220 θJA °C/W TO-220F/ TO-220F2 TO-220F1 62.5 TO-251/TO-252 110 Junction to Case TO-220 θJC 1.9 °C/W TO-220F/ TO-220F2 TO-220F1 2.7 TO-251/TO-252 2.85

UNISONIC TECHNOLOGIES CO., LTD 3 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 7 . H  ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0 V, ID = 250 μA 60 V Drain-Source Leakage Current I DSS V DS = 60 V, VGS = 0 V 10 μA Gate-Source Leakage Current Forward IGSS VGS = 20V, VDS = 0 V 100 nA Reverse V GS = -20V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250μA, Referenced to 25°C 0.06 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250 μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10 V, ID = 15 A 32 40 m Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS VGS = 0 V, VDS = 25 V, f = 1MHz 800 pF Output Capacitance C OSS 300 pF Reverse Transfer Capacitance C RSS 50 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) VDD = 30V, I D =15 A, V GS=10V (Note 1, 2) 52 ns Turn-On Rise Time t R 96 ns Turn-Off Delay Time t D(OFF) 124 ns Turn-Off Fall Time t F 84 ns Total Gate Charge Q G VDS = 60V, VGS = 10 V, ID = 24A (Note 1, 2) 20 30 nC Gate-Source Charge Q GS 6 nC Gate-Drain Charge Q GD 9 nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD V GS = 0 V, IS = 30A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 30 A Maximum Pulsed Drain-Source Diode Forward Current ISM 120 A Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD 4 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 7 . H  TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period P e a k D i o d e R e c o v e r y d v / d t W a v e f o r m s

UNISONIC TECHNOLOGIES CO., LTD 5 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 7 . H  TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms 50kΩ 0.3μF DUT VDS Same Type as D.U.T. 10V0.2μF 12V Charge QGS QGD QG VGS 1mA VG G a t e C h a r g e T e s t C i r c u i t G a t e C h a r g e W a v e f o r m Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 7 . H  TYPICAL CHARACTERISTICS 102 101 100 101 10-1 100 Drain-Source Voltage, VDS (V) On-State Characteristics 102 101 100 Gate-Source Voltage, VGS (V) Transfer Characteristics 468 1 035 79 VGS Top: 15V 10V 5.5V Bottorm: 4.5V 4.5V Note: 1. V DS=25V 2. 20µs Pulse Test 0.0 Drain Current, ID (A) 40 80 100 100 On-Resistance Variation vs. Drain Current and Gate Voltage 102 101 100 0.2 Source-Drain Voltage, VSD (V) Reverse Drain Current vs. Allowable Case Temperature *Note: 1. VGS=0V 2. 250µs Test 25℃ 150℃ VGS=10V VGS=20V Capacitance (pF) Gate-to-Source Voltage, VGS (V)

UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 7 . H  TYPICAL CHARACTERISTICS(Cont.) Drain-Source Breakdown Voltage, BVDSS(Normalized) (V) Drain-Source On-Resistance, RDS(ON), (Normalized) (Ω) 0.1 Drain-Source Voltage, VDS (V) Maximum Safe Operating 100 Case Temperature, TC (℃) 75 100 150 Maximum Drain Current vs. Case Temperature 1255025 10 100 1000 DC Operation in This Area by RDS (ON) Note: 1. TC=25℃ 2. TJ=150℃ 3. Single Pulse 10ms 1ms 100µs 0.01 Square Wave Pulse Duration, t1 (sec) 11E-5 0.1 0.1 10 0.01 Transient Thermal Response Curve 0.02 0.1 0.2 1E-4 1E-3 0.01 Note: 1. ZθJC (t) = 0.88℃/W Max. 2. Duty Factor, D=t1/t2 3. TJ -TC=PDM×ZθJC (t) Single pulse D=0.5 0.05

UNISONIC TECHNOLOGIES CO., LTD 8 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 7 . H UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.