30N06

30N06 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 30N06 MOSFET w w w . u n i s o n i c . c o m . t w 1 of 8 Copyright © 2005 Unisonic Technologies Co., Ltd QW-R502-087,A

30 Amps,60 Volts

„ DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products. „ FEATURES * RDS(ON) = 40mΩ@VGS = 10 V * Ultra low gate charge ( typical 20 nC ) * Low reverse transfer Capacitance ( C RSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability „ SYMBOL 1.Gate 3.Source 2.Drain TO-220 TO-220F *Pb-free plating product number: 30N06L „ ORDERING INFORMATION Order Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing 30N06-TA3-T 30N06L-TA3-T TO-220 G D S Tube 30N06-TF3-T 30N06L-TF3-T TO-220F G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source 30N06L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating , Blank: Pb/Sn

UNISONIC TECHNOLOGIES CO., LTD 2 of 8 www.unisonic.com.tw QW-R502-087,A „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 60 V Gate to Source Voltage V GSS ±20 V TC = 25Ċ 30 A Continuous Drain Current TC = 100Ċ ID 21.3 A Pulsed Drain Current (Note 1) I DM 120 A Avalanche Energy, Single Pulsed (Note 2) E AS 300 mJ Repetitive Avalanche Energy (Note 1) E AR 8 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 7.5 V/ns Total Power Dissipation (TC = 25Ċ) 80 W Derating Factor Above 25Ċ PD 0.53 W/ Ċ Operation Junction Temperature T J -55 ~ +150 Ċ Storage Temperature T STG -55 ~ +150 Ċ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Thermal Resistance, Junction-to-Case θJC 1.8 °C/W Thermal Resistance, Case-to-Sink θCS 0.5 °C/W Thermal Resistance, Junction-to-Ambient θJA 62.5 °C/W „ ELECTRICAL CHARACTERISTICS (TC = 25Ċ, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS = 0 V, ID = 250 µA 60 V VDS = 60 V, VGS = 0 V 1 µADrain-Source Leakage Current I DSS VDS = 48 V, VGS = 0 V,TJ = 150Ċ 10 µA Forward V GS = 20V, VDS = 0 V 100 nAGate-Source Leakage Current Reverse IGSS VGS = -20V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient BV¶ DSS/¶TJ ID = 250 µA, Referenced to 25Ċ 0.06 V/ Ċ On Characteristics Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250 µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) V GS = 10 V, ID = 15 A 32 40 m Ω Dynamic Characteristics Input Capacitance C ISS 800 pF Output Capacitance C OSS 300 pF Reverse Transfer Capacitance C RSS VGS = 0 V, VDS = 25 V f = 1MHz 80 pF Switching Characteristics Turn-On Delay Time t D(ON) 12 ns Turn-On Rise Time t R 79 ns Turn-Off Delay Time t D(OFF) 50 ns Turn-Off Fall Time t F VDD = 30V, ID =15 A,VGS=10V (Note 4, 5) 52 ns Total Gate Charge Q G 20 30 nC Gate-Source Charge Q GS 6 nC Gate-Drain Charge (Miller Charge) Q GD VDS = 60V, VGS = 10 V, ID = 24A (Note 4, 5) 9 nC

UNISONIC TECHNOLOGIES CO., LTD 3 of 8 www.unisonic.com.tw QW-R502-087,A „ ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Source-Drain Diode Ratings and Characteristics Diode Forward Voltage V SD I S = 30A, VGS = 0 V 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 30 A Maximum Pulsed Drain-Source Diode Forward Current ISM Integral Reverse p-n Junction Diode in the MOSFET G S D 120 A Reverse Recovery Time t RR 40 ns Reverse Recovery Charge Q RR IS = 30A, VGS = 0 V dIF / dt = 100 A/µs (Note4) 70 µC Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=19.5mH, IAS=30A, RG=20Ω, Starting TJ=25Ċ 3. ISD≤50A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25Ċ 4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2% 5. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD 4 of 8 www.unisonic.com.tw QW-R502-087,A „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv /dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Fig. 1A Peak Diode Recovery dv/dt Test Circuit Fig. 1B Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 8 www.unisonic.com.tw QW-R502-087,A „ TEST CIRCUITS AND WAVEFORMS (Cont.) VGS D.U.T. RG 10V VDS RL VDD VDS 90% 10% VGS tD(ON ) tR tD(OFF ) tFPulse Width≤ 1DŽs Duty Factor≤0.1 % Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms 50kȤ 0.3DŽF DUT VDS Same Type as D.U.T. 10V0.2DŽF 12V Charge QGS QGD QG VGS 1mA VG F i g . 3 A G a t e C h a r g e T e s t C i r c u i t F i g . 3 B G a t e C h a r g e W a v e f o r m D.U.T. RG 10V VDS L VDD tp IAS tp Time BVDSS Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 8 www.unisonic.com.tw QW-R502-087,A „ TYPICAL CHARACTERISTICS 102 101 100 101 10-1 100 Drain -Source Voltage , VDS (V) Drain Current, ID (A) On-State Characteristics 102 101 100 Gate-Source Voltage, VGS (V) Drain Current, ID (A) Transfer Characteristics 468 1 035 79 VGS Top: 15V 10 V 8 V 7 V 6 V 5 .5V Bottorm : 4.5V 4.5V Note: 1. VDS=25V 2. 20µs Pulse Test 150¥ 25¥ 0.0 Drain-Source On-Resistance, RDS(ON) (mȤ) Drain Current , ID (A) 40 80 100 100 On-Resistance Variation vs . Drain Current and Gate Voltage 102 101 100 0.2 Source-Drain Voltage , VSD (V) Reverse Drain Current, ISD (A) Reverse Drain Current vs . Allowable Case Temperature *Note: 1. VGS=0V 2. 250µs Test 25¥ 150¥ VGS=10V VGS=20V 1500 0.1 Drain -Source Voltage, VDC (V) Capacitance (pF) Capacitance Characteristics (Non-Repetitive ) 500 1000 1 0 Gate-to-Source Voltage, VGS (V) Total Gate Charge, QG (nC) 5 15 20 25 Gate Charge Characteristics 2000 Ciss *Note: ID=30A VDS=30V VDS=48V Coss Ciss =Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd Crss *Note: 1. VGS=0V 2. f = 1MHz

UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw QW-R502-087,A „ TYPICAL CHARACTERISTICS(Cont.) -100 Drain-Source Breakdown Voltage, BVDSS(Normalized) Junction Temperature , TJ (¥) -50 50 200 *Note: 1. VGS=0V 2. ID=250µA 100 150 1.2 Breakdown Voltage Variation vs. Junction Temperature 1.1 1.0 0.9 0.8 Drain-Source On-Resistance, RDS(ON), (Normalized) -50 50 100 150 3.0 On-Resistance Variation vs . Junction Temperature 2.0 1.0 0.5 0.0 1.5 2.5 Junction Temperature , TJ (¥) *Note: 1. VGS=10V 2. ID=15A 0.1 Drain -Source Voltage, VDS (V) Drain Current , ID,(A) Maximum Safe Operating 100 Drain Current, ID (A) Case Temperature, TC (¥) 75 100 150 Maximum Drain Current vs . Case Temperature 1255025 10 100 1000 DC Operation in This Area by RDS (ON) *Note: 1. Tc=25¥ 2. TJ=150¥ 3. Single Pulse 10ms 1ms 100µs 0.01 Square Wave Pulse Duration , t1 (sec) Thermal Response, ZȬJC (t) 11E-5 0.1 0.1 10 0.01 Transient Thermal Response Curve 0.02 0.1 0.2 1E-4 1E-3 0.01 *Note: 1. ZȬJC (t) = 0.88¥/W Max. 2. Duty Factor , D=t1/t2 3. TJ -TC=PDM×ZȬJC (t ) Single pulse D=0.5 0.05

UNISONIC TECHNOLOGIES CO., LTD 8 of 8 www.unisonic.com.tw QW-R502-087,A UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.