GT30J301 TOSHIBA | Alldatasheet
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS, 1S9MAX, $3.220.2 © The 3rd Generation VN | x | O77 @ $ @ Enhancement-Mode 3 P TS ol Fy ey o) NTO @ High Speed : t¢=0.30s (Max.) 1 > © Low Saturation Voltage : Von (sat)=2.7V (Max.) ares t 3 1.0 - 0.2! x e@ FRD included between Emitter and Collector Se 5.45202 5.05202 MAXIMUM RATINGS (Ta = 25°C) 3) 35 | S| tal | alps CHARACTERISTIC SYMBOL UNIT Se Ce Collector-Emitter Voltage Vcors [| 600 | V_ | . Gate-Emitter Voltage VGES 1. GATE | pe | we [30 [A | 5 ewiren. AT SING Collector Current 3. EMITTER [| ims | Iop [60 [ A | EDEC Emitter-Collector SEDC = Forward Current __[ ms | Ir | 60 | A _| Collector Power Dissipation TOSHIBA —_2-16C1C (Toe=25°C) Weight : 4.6g Storage Temperature Range —55~150 EQUIVALENT CIRCUIT Collector Gate oS Emitter O61001EAA @ TOSHIBA js continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed. by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-08-22 1/6
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION | a. | rye. [ax. [unr] Gate Leakage Current Iges _|Vqu=+20V, Vop=0 [| — | — [+500 Collector Cut-Off Current Icrs _|Vow=600V, Von=0 | — | — [| 1.0] ma | Gate-Emitter Cut-Off Voltage |VGE(OFF)|Ic=3mA, VcR=5V [50 | — | 80] Vv | Collector-Emitter Saturation fog ron fom vores | = | asf al Input Capacitance Vcn=20V, Vap=0, f=1MHz | — | 2200] — | pF | Inductive Load | = [12 [| Switching Voo=800V, I¢=30A [= Too — | Time Fall me | t _|VGG=+19V, Rq=430 [= [015 [os0} “* Tum-Of Time] tof | (ote) | — | 0.70 | — | Peak Forward Voltage Ip=30A, Van=0 | — | — | 20] v | Reverse Recovery Time Ip=30A, di/dt=-100A/ps [| — | — | 200| ns | Thermal Resistance (GBM | Rugo | | — | — | 081 POW] Thermal Resistance (Diode) | Rngo [| = | = [20°C Ww] (Note) Switching time measurement circuit and input/output waveforms Vor: ' Rg 90% \\ ~Vor Io} L Voc I i i J Rg 1 90% ifn 90% ow VCE iN fi
9 Vowtomifi 10% 10%if | 110%
td (off) | fept ta(on)} fr | * toff | ‘ton | Switching loss measurement waveforms Vv ‘ \\ 0 ae Se Cn i i 0 “CE. 1 1 1 1 10% Ls Ls hort Don! 1997-08-22 2/6
100 Ic - VCE 5 » VCE — VGE
[see |-{ ff} = Eee eee 2 ee sje ee Oa a ee ee 0 | & pt eye ttt ow e [lt TT pet ee | e COLI AL | ee | ge Ll] | yew 2 {ti ty yl 2,1) | Yr | i | s ji tt He oe eae s - >ETT tS > | e {i]t eerrrry COLLECTOR-EMITTER VOLTAGE Vcg (V) GATE-EMITTER VOLTAGE VgE (V) sm» Vcr - VGE Sm VCE - VGE < [anger LTH = jee HHH Si {rewe | TWIT TT SF ijrevwe | TTT | | ge ELT Ty Wye TT e -tT tT yi ee ee ee es ee 0 SET TT Ty Tr e fit it Uy | e ji Tt iit ty 2 Ll. | it fy 2 {ti} Tir yy gs ji tf Hee | s J TT TTR | Tt e COCC) RSS SS a tlt [1.1 s littl tfrfrrtrre i 0 4 8 12 16 20 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V)
100 Ic — VGE 4 VCE (sat) — Te
ee Hoy; fee 2 ypveersv | oT | tT tt &. | vor | | | | | [te eft treo |} Lee za j | =e e ET TTT TART a2 Ie ® 8 pf ey] aa Z A Ze Litt Tt tity | 0 ¢ * ro 160 Seg 39 90 — 30 100-40 GATE-EMITTER VOLTAGE VgE (V) CASE TEMPERATURE Te (°C) mms 1997-08-22 3/6
SWITCHING TIME ton, tr — RG SWITCHING TIME ton, tr - IC 3 10 —=—— - | - goxnox eanrren =
8 LIM TT ie | TIT 2 fee EE
+ GR a 2 [caine [| | 3 os ae ee = os RT s Feo Saar
2 UUM Tee Tl 2 oer
g (OMMON EMITTER] 2 CUE oar ee qRRGEREES== <2
2 GSS aec= g SS SS SS S|
0.03! GATE RESISTANCE Rg (2) COLLECTOR CURRENT Ig (A)
5 SWITCHING TIME off, tt — RG SWITCHING TIME tof, tt — Ic
10; | (OMMON EMITTER] COMMON EMITTER | F=——-— Rew a - COMMON ==aaaa q lveG=+15V zg VeG=t15V ee ee ~ fICESOA ose EH et ~ 3) Rg=430 a =| So eitare SP Fn EH = [faints [TT ET Boos eo TTT a | . ee a a ee ee ee ee 2 os Hee tH = Eee
2 LUI TT Jie TT a ea |
PCM rer) = Ee
2 UU TT | a Se eee
2 GREE aa gS SSeS
= | e ee | 0.03! Lt {| 3 10 30 100 300 1000 of TET TTITEr tS GATE RESISTANCE Rg (2) COLLECTOR CURRENT Ig (A) 10S TOING LOSS Fon, Pott — RG so SWITCHING LOSS _Bon, Eoft ~ IC J SHS COMMON EMITTER
3 FEAR Boo Fy Voo=s00v —— a
Se oe 2 | Yeouznev Fen | ee ee | ee ee es oe LU EERER ET oe ||| eee eae: ee o1 FE i) oe || H EE aaa Se SSS SS > ae eee g oe 2 0s| Aza et tt 3 os} —_ AT 8 a a 2 ptt | | | BL LIM | [Recs 2 Ae > ee & FARRER Ee ree z ee Ic = 308 = 0.03 ey es ee ee ee ee FEES e reese aa a oe ott t tit | tt tt | 1 3 10 30 100 300 1000 0 5 10 15 20 25 30 GATE RESISTANCE Rg (Q) COLLECTOR CURRENT Ig (A) 1997-08-22 4/6
, C — VCE _ VCE, VGE - 9G . Heal 8 | Rake cr nif = 8000 FT ah * 400 J. 8 § waft PRa TT Sl eH Et a 2 ==, & SB seorrrrn eo ACT g LAT |, E a COMMON pe ee S Ten26C lin 2 ZV TSS) ° wo tener UM LT TT Ncreell g Wit + 0.3 1 3 10 30 100 = 300 1000 COLLECTOR-EMITTER VOLTAGE VcE (V) GATE CHARGE Qg (nC) 100} ir - vr 30) ter ie = aa 300 eee ff | ft eL, PI TET TE Try 2 Po id “i LH} ico potti titi, § “AEEREERSEEES| & z t// > sft ttttrtrrer, & ag || 1 tt | Ay eg a a See en 8 jTTTTTTT Tye, 8 5 7 67a 2 te LT ava ion 3 [| [ene Yio || a Haina vee en 25'C 5 tL LEE | | g 1 La Te= 1250 10 a 0 04 0.8 12 16 2.0 0 5 10 16 20 25 30 FORWARD VOLTAGE Vp (V) FORWARD CURRENT Ip (A) SAFE OPERATING AREA REVERSE BIAS SOA Pa es = ote ee | ‘ oN NTH NN a : sfotrivos SON YL eee ee Peet ON ms SNR z -—— a a a 4
2 HEH Biren ESET 2 oof Prfeahp che Porth 2 |
8 TH tl | yee 8 coin
© 03) DILATED LINEARLY THT WT TTL 1 © 03) vogesisy COI i oaLTemperarune, [HHiT NUTT oa Rome |THE TTT | 1 3 10 30 100 = 300 1000 3000 1 3 10 30 100 = 300 1000 +3000 COLLECTOR-EMITTER VOLTAGE Veg (V) COLLECTOR-EMITTER VOLTAGE Veg (V) TTT “TBD 5G
: Rth(t) — tw 8 Ft
8 FHipIone stace = ae
= Raa cs ADA 5* fe g Vee ee S vo-® LU eee ee ae | ro LOI Fr o> 10* 10° 107 107 10° 10° 10” PULSE WIDTH tw (s) 1997-08-22 6/6