GT30J101_06 TOSHIBA | Alldatasheet

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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications

  • Third-generation IGBT
  • Enhancement mode type
  • High speed: t f = 0.30 μs (max)
  • Low saturation voltage: VCE (sat) = 2.7 V (max) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC I C 30 Collector current 1 ms I CP 60 A Collector power dissipation (Tc = 25°C) PC 155 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g GT30J101 TOSHIBA Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES V GE = ±20 V, VCE = 0 ⎯ ⎯ ±500 nA Collector cut-off current ICES V CE = 600 V, VGE = 0 ⎯ ⎯ 1.0 mA Gate-emitter cut-off voltage VGE (OFF) I C = 3 mA, VCE = 5 V 5.0 ⎯ 8.0 V Collector-emitter saturation voltage V CE (sat) I C = 30 A, VGE = 15 V ⎯ 2.1 2.7 V Input capacitance Cies V CE = 20 V, VGE = 0, f = 1 MHz ⎯ 2200 ⎯ pF Rise time tr ⎯ 0.12 ⎯ Turn-on time t on ⎯ 0.40 ⎯ Fall time tf ⎯ 0.15 0.30 Switching time Turn-off time t off Inductive Load VCC = 300 V, IC = 30 A VGG = ±15 V, RG = 43 Ω (Note1) ⎯ 0.70 ⎯ μs Thermal resistance Rth (j-c) ⎯ ⎯ ⎯ 0.81 °C/W Note1: Switching time measurement circuit and input/output waveforms Note2: Switching loss measurement waveforms GT30J301 RG IC VCE L V CC −VGE 10% 90% VGE VCE IC td (off) toff td (on) t r ton tf 10%10% 10% 90% 10% 90% 10% 90% VGE VCE IC Eoff E on 0 10%

Collector current I C (A) Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Gate-emitter voltage V GE (V) IC – VGE Case temperature Tc (°C) VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) 100 0 1 2 3 4 5 VGE = 10 V Common emitter Tc = 25°C 15 13 0 4 8 12 16 20 Common emitter Tc = −40°C IC = 10 A 0 4 8 12 16 20 Common emitter Tc = 25°C IC = 10 A 100 0 4 8 12 16 20 Tc = 125°C Common emitter VCE = 5 V −40 −60 −20 20 60 100 140 Common emitter VGE = 15 V 60 IC = 5 A 0 4 8 12 16 20 Common emitter Tc = 125°C 20 60 IC = 10 A

Switching loss E on, Eoff (mJ) Switching time t off, tf ( μs) Gate resistance R G ( Ω) Switching time t on, tr – RG Switching time t on, tr ( μs) Collector current I C (A) Switching time t on, tr – IC Switching time t on, tr ( μs) Gate resistance R G ( Ω) Switching time t off, tf – RG Switching time t off, tf ( μs) Collector current I C (A) Switching time t off, tf – IC Gate resistance R G ( Ω) Switching loss E on, Eoff – RG Collector current I C (A) Switching loss E on, Eoff – IC Switching loss E on, Eoff (mJ) 0.5 0.3 0.05 3 10 30 0.1 0.03 100 300 1000 tr ton Common emitter VCC = 300 V VGG = ±15 V IC = 30 A : Tc = 25°C : Tc = 125°C tf toff Common emitter VCC = 300 V VGG = ±15 V IC = 30 A : Tc = 25°C : Tc = 125°C 0.5 0.3 0.05 3 10 30 0.1 0.03 100 300 1000 0.1 1 3 10 30 0.3 0.03 100 300 1000 Eoff Eon Common emitter VCC = 300 V VGG = ±15 V IC = 30 A : Tc = 25°C : Tc = 125°C Note2 0 5 10 15 20 25 30 0.3 0.1 0.01 0.03 Common emitter VCC = 300 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C Note2 Eoff Eon 5 10 0 0.3 0.1 0.01 0.03 15 20 25 30 tr ton Common emitter VCC = 300 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C 1 0.5 0.05 0 5 10 15 20 25 30 0.3 0.1 0.01 0.03 Common emitter VCC = 300 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C tf toff 0.5 0.05

Transient thermal impedance Rth (t) (°C/W) Collector current I C (A) Gate-emitter voltage V GE (V) Gate charge Q G (nC) VCE, VGE – QG Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) Safe operating area Collector current I C (A) Collector-emitter voltage V CE (V) Reverse bias SOA Pulse width t w ( s ) Rth (t) – tw 0.3 1 3 10 0.5 30 100 300 3000 1000 0.1 100 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (pulsed)* IC max (continuous) DC operation 1 ms* 100 μs* 50 μs* 10 ms* 0.3 1 3 10 0.5 30 100 300 3000 1000 0.1 100 Tj < = 125°C VGE = ±15 V RG = 43 Ω Capacitance C (pF) Collector-emitter voltage V CE (V) C – VCE 1 3 0.3 300 100 1000 3000 10000 10 30 100 300 1000 Common emitter VGE = 0 f = 1 MHz Tc = 25°C Cies Coes Cres Common emitter RL = 10 Ω Tc = 25°C 20 40 60 80 100 100 200 300 400 500 VCE = 100 V 300 200 10−3 102 10−5 10 −4 10 −3 10 −2 10 −1 10 0 10 1 10 2 10−2 10−1 100 101 10−4 Tc = 25°C

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
  • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
  • Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.