30H10K FUMAN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

  • VDS = 30V,ID =100A RDS(ON) < 4.2mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =5V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package Application
  • PWMapplications
  • Load switch
  • Power management 100% UIS TESTED! 100% ΔVds TESTED! Schematic Diagram Marking andpinAssignment TO-252(DPAK)top view PackageMarkingandOrderingInformation Device Marking Device Device Package ReelSize Tape width Quantity 30H10K 30H10K TO-252 325mm 16mm 2500 Table1. AbsoluteMaximumRatings(TA=25℃) Symbol Parameter Value Unit VDS Drain-Source Voltage(VGS=0V） 30 V VGS Gate-Source Voltage(VDS=0V) ±20 V ID Drain Current-Continuous(Tc=25℃) 100 A Drain Current-Continuous(Tc=100℃) 70 A IDM(pluse) Drain Current-Continuous@ Current-Pulsed (Note 1) 400 A PD Maximum Power Dissipation(Tc=25℃) 88 W Maximum Power Dissipation(Tc=100℃) 44 W EAS Avalancheenergy(Note 2) 320 mJ TJ,TSTG Operating Junction and Storage Temperature Range -55 To175 ℃ Notes1.RepetitiveRating:Pulsewidthlimitedbymaximumjunction temperatureNotes2.EAScondition:TJ=25℃,VDD=20V,VG=10V, RG=25Ω 30H10K

深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 30H10K(文件编号：S&CIC1689) N-ChannelTrenchPowerMOSFET www.superchip.cn Version1.0第2 页共6 页 Table2. ThermalCharacteristic Symbol Parameter Typ Max Unit RJC Thermal Resistance, Junction-to-Case - 1.7 ℃/W Table3. ElectricalCharacteristics(TA=25℃unlessotherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/OffStates BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 30 V IDSS Zero Gate Voltage Drain Current VDS=30V,VGS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1 1.5 2.5 V gFS Forward Transconductance VDS=5V,ID=15A 30 S RDS(ON Drain-Source On-State Resistance VGS=10V, ID=20A 3.6 4.2 mΩ VGS=5V, ID=15A 4.6 7 mΩ Dynamic Characteristics Ciss Input Capacitance VDS=15V,VGS= 0V, f=1.0MHz 2600 pF Coss Output Capacitance 412 pF Crss Reverse Transfer Capacitance 300 pF Rg Gate resistance VGS=0V, VDS=0V,f=1.0MHz 3.3 Ω Switching Times td(on) Turn-on Delay Time VGS=10V, VDS=15V, RL=0.75,RGEN= 13 nS tr Turn-on Rise Time 16 nS td(off) Turn-Off Delay Time 40 nS tf Turn-Off Fall Time 14 nS Qg Total Gate Charge VGS=10V, VDS=15V,ID=14A 58 nC Qgs Gate-Source Charge 7 nC Qgd Gate-Drain Charge 18 nC Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) 100 A VSD Forward on Voltage(Note1) VGS=0V,IS=20A 1.2 V Notes1.RepetitiveRating:Pulsewidthlimitedbymaximumjunction temperature.

深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 30H10K(文件编号：S&CIC1689) N-ChannelTrenchPowerMOSFET www.superchip.cn Version1.0第3 页共6 页 TestCircuit 1) EASTestCircuits 2) GateCharge TestCircuit: 3) SwitchTime TestCircuit：

深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 30H10K(文件编号：S&CIC1689) N-ChannelTrenchPowerMOSFET www.superchip.cn Version1.0第4 页共6 页 TYPICAL ELECTRICAL ANDTHERMAL CHARACTERISTICS(Curves) Figure1.OutputCharacteristics Figure2.TransferCharacteristics VDS Drain-to-SourceVoltage(V) VGS Gate-to-SourceVoltage(V) Figure3.MaxBVDSSvsJunction Temperature Figure4.DrainCurrent TJ-JunctionTemperature(℃) TJ-JunctionTemperature(℃) Figure5.VGS(th) vsJunction Temperature Figure6.RDS(ON)vsJunction Temperature TJ-JunctionTemperature(℃) TJ-JunctionTemperature(℃) Id(A) Id(A) NormalizedBVDSS Id(A) NormalizedVth Normalized Rdson

深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 30H10K(文件编号：S&CIC1689) N-ChannelTrenchPowerMOSFET www.superchip.cn Version1.0第5 页共6 页 Figure7.GateChargeWaveforms Figure8.Capacitance Qg(nC) VDSDrain-to-SourceVoltage(V) Figure9.Body-DiodeCharacteristics Figure10.Maximum SafeOperatingArea Vsd(V) VDS Drain-to-SourceVoltage(V) Figure11.NormalizedMaximum TransientThermalImpedance SquareWavePluse Duration(sec) Vgs (V) CCapacitance(pF) Is(A) Id(A) R(t), Normalized Effective TransientThermal Impedance

深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 30H10K(文件编号：S&CIC1689) N-ChannelTrenchPowerMOSFET www.superchip.cn Version1.0第6 页共6 页 TO-252PackageInformation