30EPH06 THINKISEMI | Alldatasheet

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30.0 Ampere SwitchMode Single Fast Recovery Epitaxial Diode

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/3 Internal Configuration Cathode(Bottom Side Metal Heatsink) Cathode Anode Base Backside

  • Ultrafast Recovery Time
  • Soft Recovery Characteristics
  • Low Recovery Loss
  • Low Forward Voltage
  • High Surge Current Capability
  • Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE SF30A60E using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. Rev.05 ABSOLUTE MAXIMUM RATINGS T C

ELECTRICAL CHARACTERISTICS

T =25°C unless otherwise specified C =25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit V Maximum D.C. Reverse Voltage R 600 V V Maximum Repetitive Reverse Voltage RRM 600 V I Average Forward Current F(AV) T C 30 =110°C, Per Diode A I RMS Forward Current F(RMS) T C 42 =110°C, Per Diode A I Non-Repetitive Surge Forward Current FSM T J 300 =45°C, t=10ms, 50Hz, Sine A P Power Dissipation D 156 W T Junction Temperature J -40 to +150 °C T Storage Temperature Range STG -40 to +150 °C Torque Module-to-Sink Recommended（M3） 1.1 N·m R Thermal Resistance θJC Junction-to-Case 0.8 °C /W Weight 6.0 g Symbol Parameter Test Conditions Min. Typ. Max. Unit I Reverse Leakage Current RM V R -- =600V -- 15 µA V R =600V, T J V Forward Voltage F I F -- =30A 1.5 1.8 V I F =30A, T J -- =125°C 1.3 V t Reverse Recovery Time rr I F =1A, V R =30V, di F -- /dt=-200A/μs 30 -- ns t Reverse Recovery Time rr V R =300V, I F =30A di F /dt=-200A/μs, T J =25°C 51 -- ns I Max. Reverse Recovery Current RRM -- 4.2 -- A t Reverse Recovery Time rr V R =300V, I F =30A di F /dt=-200A/μs, T J =125°C 130 -- ns I Max. Reverse Recovery Current RRM -- 9 -- A

. . . 30EPH06 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/3Rev.05 I F (A) V F （V） Fig1. Forward Voltage Drop vs Forward Current T J =125°C T J =25°C 100 0 0.5 1.0 2.0 2.5 3.0 di F /dt（A/μs） Fig2. Reverse Recovery Time vs di F /dt 1000 800 600 400 200 0 0 t rr (ns) 100 150 200 250 V R =300V T J =125°C I F =60A I F =15A I F =30A I RRM (A) di F /dt（A/μs） Fig3. Reverse Recovery Current vs di F /dt 0 0 200 400 600 800 1000 di F /dt（A/μs） Fig4. Reverse Recovery Charge vs di F /dt 1000 800 600 400 200 0 0 500 Q rr (nc) 1000 1500 2000 V R =300V T J =125°C I F =60A I F =15A I F =30A V R =300V T J =125°C I F =60A I F =30A I F =15A K f Duty 0.5 0.2 0.1 0.05 Single Pulse 0.2 0.4 1.2 0.6 Z thJC (K/W) 0.8 I RRM Q rr t rr T J (°C) Fig5. Dynamic Parameters vs Junction Temperature 0 25 50 100 150 1 10 Rectangular Pulse Duration (seconds) Fig6. Transient Thermal Impedance 75 125 1.5 2500

Ejector pin hole thickness (h) D A be c L H Ø SYMBOL DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES MIN. MAX. MIN. MAX. A 4.850 5.150 0.191 0.200 A1 2.200 2.600 0.087 0.102 b 1.000 1.400 0.039 0.055 b1 1.800 2.200 0.071 0.087 c 0.500 0.700 0.020 0.028 c1 1.900 2.100 0.075 0.083 D 15.450 15.750 0.608 0.620 E1 3.500 Ref. 0.138 Ref. E2 3.600 Ref. 0.142 Ref. L 40.900 41.300 1.610 1.626 L1 24.800 25.100 0.976 0.988 L2 20.300 20.600 0.799 0.811 Ø 7.100 7.300 0.280 0.287 e 10.900 Typ. 0.429 Typ. H 5.980 Typ. 0.235 Typ. h 0.000 0.300 0.000 0.012 TO-247-2L DIMENSIONS © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 3/3Rev.05 I F dI F /dt t rr I RRM Q rr 0.25 I RRM 0.9 I RRM Fig7. Diode Reverse Recovery Test Circuit and Waveform 30EPH06